JPS5491196A - Production of photoconductive array-shaped infrared detector - Google Patents
Production of photoconductive array-shaped infrared detectorInfo
- Publication number
- JPS5491196A JPS5491196A JP15903577A JP15903577A JPS5491196A JP S5491196 A JPS5491196 A JP S5491196A JP 15903577 A JP15903577 A JP 15903577A JP 15903577 A JP15903577 A JP 15903577A JP S5491196 A JPS5491196 A JP S5491196A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- unit elements
- crystal
- substrate
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To form easily many unit elements of minute patterns by separation and avoid the damage of elements, by producing a thin layer of semiconductor crystal, which becomes a light receiving face, in a process near the last process and fitting lead wires to thick layers.
CONSTITUTION: The surface of multiple semiconductor crystal 11 is etched to provide linear groove 12 which has a length determined by the number of unit elements, and the surface is covered with organic insulating resin layer 13 so that groove 12 may be filled up completely. meanwhile, insulating substrate 14 such as sapphire is prepared, and two electrodes 15 of Cr-Au alloy are provided correspondingly to unit elements on this substrate 14, and insulating resin layer 14 of crystal 11 is fixed between electrodes 15 through adhesive 16 such as epoxy resin. Next, the thickness of crystal 11 is reduced from the reverse face by polishing, and a metal which become electrodes of unit elements is evaporated on this surface and is subjected to photo etching and is made into electrodes 17. After that, these electrodes 17 and electrodes 15 on substrate 14 are connected by lead wire 18. Thus, a number of unit elements are arranged to produce a detector, thereby giving array structure.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15903577A JPS5491196A (en) | 1977-12-28 | 1977-12-28 | Production of photoconductive array-shaped infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15903577A JPS5491196A (en) | 1977-12-28 | 1977-12-28 | Production of photoconductive array-shaped infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5491196A true JPS5491196A (en) | 1979-07-19 |
Family
ID=15684819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15903577A Pending JPS5491196A (en) | 1977-12-28 | 1977-12-28 | Production of photoconductive array-shaped infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491196A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724580A (en) * | 1980-07-18 | 1982-02-09 | Fujitsu Ltd | Manufacture of infrared ray detecting element |
| JPS57175224A (en) * | 1981-03-30 | 1982-10-28 | Secr Defence Brit | Photoconductive detector |
| JPS61171175A (en) * | 1985-01-25 | 1986-08-01 | Nec Corp | Photoconductive semiconductor infrared sensor |
-
1977
- 1977-12-28 JP JP15903577A patent/JPS5491196A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724580A (en) * | 1980-07-18 | 1982-02-09 | Fujitsu Ltd | Manufacture of infrared ray detecting element |
| JPS6310910B2 (en) * | 1980-07-18 | 1988-03-10 | Fujitsu Ltd | |
| JPS57175224A (en) * | 1981-03-30 | 1982-10-28 | Secr Defence Brit | Photoconductive detector |
| JPH059945B2 (en) * | 1981-03-30 | 1993-02-08 | Secr Defence Brit | |
| JPS61171175A (en) * | 1985-01-25 | 1986-08-01 | Nec Corp | Photoconductive semiconductor infrared sensor |
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