JPS55154726A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55154726A
JPS55154726A JP6281079A JP6281079A JPS55154726A JP S55154726 A JPS55154726 A JP S55154726A JP 6281079 A JP6281079 A JP 6281079A JP 6281079 A JP6281079 A JP 6281079A JP S55154726 A JPS55154726 A JP S55154726A
Authority
JP
Japan
Prior art keywords
semiconductor
bond
manufacture
elements
energy gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6281079A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP6281079A priority Critical patent/JPS55154726A/en
Publication of JPS55154726A publication Critical patent/JPS55154726A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To manufacture a semiconductor device, by adjusting the stoichiometric ratio of constituent elements of a semiconductor or locally providing H or a halogen element such as F and C in the semiconductor to locally control the energy gap of a non-monocrystaling thin film produced on a substrate. CONSTITUTION:Additives, which neutralize the unpaired links of semiconductor elements such as Si, C, Se and Sb which become the nuclei of recombination, differ in bonding force depending on the semiconductor elements. For example, C is added to Si to produce a mixture semiconductor. When a C-H or C-F bond stronger than an Si-H or Si-F bond is utilized and energy which is not sufficient for one bond but is sufficient for another bond is applied by heat or ultraviolet rays, H or halogen can be locally left in proportion to the density of the elements of the stronger bond. According to this method, the energy gap Eg of non-single crystal Si produced on a substrate can be optionally controlled or the stoichiometrical ratio of non-monocrystaling of a mixture such as SixO1-x(0.5<x<1) and SixGe1-x(0.5<x<1) can be changed to control the energy gap. This results in enabling the manufacture of a solar battery or the like.
JP6281079A 1979-05-22 1979-05-22 Manufacture of semiconductor device Pending JPS55154726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6281079A JPS55154726A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6281079A JPS55154726A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59077240A Division JPS6057618A (en) 1984-04-16 1984-04-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55154726A true JPS55154726A (en) 1980-12-02

Family

ID=13211059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6281079A Pending JPS55154726A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154726A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157577A (en) * 1981-03-23 1982-09-29 Sumitomo Electric Ind Ltd Manufacture of thin film photovoltaic element
JPS57162421A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Depositing method
JPS589320A (en) * 1981-07-08 1983-01-19 Agency Of Ind Science & Technol Manufacture of silicon thin-film
JPS5856415A (en) * 1981-09-30 1983-04-04 Semiconductor Energy Lab Co Ltd Plasma vapor growth method
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS58206119A (en) * 1982-05-27 1983-12-01 Agency Of Ind Science & Technol Thin-film producing apparatus
JPS59124163A (en) * 1982-12-29 1984-07-18 Canon Inc Semiconductor element
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS61201257A (en) * 1985-03-04 1986-09-05 Matsushita Electric Ind Co Ltd Photoconductor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS.=1977 *
PHILOS MAG.=1977 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162421A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Depositing method
JPS6312397B2 (en) * 1981-03-23 1988-03-18 Sumitomo Electric Industries
JPS57157577A (en) * 1981-03-23 1982-09-29 Sumitomo Electric Ind Ltd Manufacture of thin film photovoltaic element
JPS589320A (en) * 1981-07-08 1983-01-19 Agency Of Ind Science & Technol Manufacture of silicon thin-film
JPH0376018B2 (en) * 1981-07-08 1991-12-04 Kogyo Gijutsu Incho
JPS5856415A (en) * 1981-09-30 1983-04-04 Semiconductor Energy Lab Co Ltd Plasma vapor growth method
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021366B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021365B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS58206119A (en) * 1982-05-27 1983-12-01 Agency Of Ind Science & Technol Thin-film producing apparatus
JPS59124163A (en) * 1982-12-29 1984-07-18 Canon Inc Semiconductor element
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS61201257A (en) * 1985-03-04 1986-09-05 Matsushita Electric Ind Co Ltd Photoconductor

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