JPS55154726A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55154726A
JPS55154726A JP6281079A JP6281079A JPS55154726A JP S55154726 A JPS55154726 A JP S55154726A JP 6281079 A JP6281079 A JP 6281079A JP 6281079 A JP6281079 A JP 6281079A JP S55154726 A JPS55154726 A JP S55154726A
Authority
JP
Japan
Prior art keywords
semiconductor
bond
si
lt
non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6281079A
Inventor
Shunpei Yamazaki
Original Assignee
Shunpei Yamazaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shunpei Yamazaki filed Critical Shunpei Yamazaki
Priority to JP6281079A priority Critical patent/JPS55154726A/en
Publication of JPS55154726A publication Critical patent/JPS55154726A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/548Amorphous silicon PV cells

Abstract

PURPOSE:To manufacture a semiconductor device, by adjusting the stoichiometric ratio of constituent elements of a semiconductor or locally providing H or a halogen element such as F and C in the semiconductor to locally control the energy gap of a non-monocrystaling thin film produced on a substrate. CONSTITUTION:Additives, which neutralize the unpaired links of semiconductor elements such as Si, C, Se and Sb which become the nuclei of recombination, differ in bonding force depending on the semiconductor elements. For example, C is added to Si to produce a mixture semiconductor. When a C-H or C-F bond stronger than an Si-H or Si-F bond is utilized and energy which is not sufficient for one bond but is sufficient for another bond is applied by heat or ultraviolet rays, H or halogen can be locally left in proportion to the density of the elements of the stronger bond. According to this method, the energy gap Eg of non-single crystal Si produced on a substrate can be optionally controlled or the stoichiometrical ratio of non-monocrystaling of a mixture such as SixO1-x(0.5<x<1) and SixGe1-x(0.5<x<1) can be changed to control the energy gap. This results in enabling the manufacture of a solar battery or the like.
JP6281079A 1979-05-22 1979-05-22 Manufacture of semiconductor device Pending JPS55154726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6281079A JPS55154726A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6281079A JPS55154726A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55154726A true JPS55154726A (en) 1980-12-02

Family

ID=13211059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6281079A Pending JPS55154726A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154726A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157577A (en) * 1981-03-23 1982-09-29 Sumitomo Electric Ind Ltd Manufacture of thin film photovoltaic element
JPS57162421A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Depositing method
JPS589320A (en) * 1981-07-08 1983-01-19 Agency Of Ind Science & Technol Manufacture of silicon thin-film
JPS5856415A (en) * 1981-09-30 1983-04-04 Semiconductor Energy Lab Co Ltd Plasma vapor growth method
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS58206119A (en) * 1982-05-27 1983-12-01 Agency Of Ind Science & Technol Thin-film producing apparatus
JPS59124163A (en) * 1982-12-29 1984-07-18 Canon Inc Semiconductor element
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS61201257A (en) * 1985-03-04 1986-09-05 Matsushita Electric Ind Co Ltd Photoconductor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS.=1977 *
PHILOS MAG.=1977 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162421A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Depositing method
JPS57157577A (en) * 1981-03-23 1982-09-29 Sumitomo Electric Ind Ltd Manufacture of thin film photovoltaic element
JPS6312397B2 (en) * 1981-03-23 1988-03-18 Sumitomo Electric Industries
JPS589320A (en) * 1981-07-08 1983-01-19 Agency Of Ind Science & Technol Manufacture of silicon thin-film
JPH0376018B2 (en) * 1981-07-08 1991-12-04 Kogyo Gijutsu Incho
JPS5856415A (en) * 1981-09-30 1983-04-04 Semiconductor Energy Lab Co Ltd Plasma vapor growth method
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021366B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021365B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS58206119A (en) * 1982-05-27 1983-12-01 Agency Of Ind Science & Technol Thin-film producing apparatus
JPS59124163A (en) * 1982-12-29 1984-07-18 Canon Inc Semiconductor element
JPS60200523A (en) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS61201257A (en) * 1985-03-04 1986-09-05 Matsushita Electric Ind Co Ltd Photoconductor

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