JPS56162828A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56162828A
JPS56162828A JP6589780A JP6589780A JPS56162828A JP S56162828 A JPS56162828 A JP S56162828A JP 6589780 A JP6589780 A JP 6589780A JP 6589780 A JP6589780 A JP 6589780A JP S56162828 A JPS56162828 A JP S56162828A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
surface
si
stress
mobility
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6589780A
Inventor
Kazumichi Omura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02694Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/0242Crystalline insulating materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283Lateral isolation by refilling of trenches with dielectric material

Abstract

PURPOSE:To enhance the mobility of carrier in a semiconductor device by injecting ions to a semiconductor single crystalline thin film, forming amorphous film except the surface layer and heating it to epitaxially grow it, thereby moving the stress in the main surface direction in positive direction. CONSTITUTION:Si single crystals are formed by the thermal decomposition of SiH4 on the main surface of a sapphire substrate 21, Si ions 23 are injected to form an amorphous layer 24 except 20Angstrom of the surface layer 22, and an energy beam is emitted to epitaxially grow from the surface. Thus, the single crystal Si which bears compression stress is converted to bear tension stress, thereby enhancing the mobility of the carrier running parallel to the surface of the film.
JP6589780A 1980-05-20 1980-05-20 Manufacture of semiconductor device Pending JPS56162828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6589780A JPS56162828A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6589780A JPS56162828A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device
US06263502 US4385937A (en) 1980-05-20 1981-05-14 Regrowing selectively formed ion amorphosized regions by thermal gradient
DE19813119886 DE3119886C2 (en) 1980-05-20 1981-05-19
FR8110064A FR2483127B1 (en) 1980-05-20 1981-05-20 Method of manufacturing a semiconductor device

Publications (1)

Publication Number Publication Date
JPS56162828A true true JPS56162828A (en) 1981-12-15

Family

ID=13300209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6589780A Pending JPS56162828A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56162828A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
JP2005203685A (en) * 2004-01-19 2005-07-28 Oki Electric Ind Co Ltd Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
JP2005203685A (en) * 2004-01-19 2005-07-28 Oki Electric Ind Co Ltd Semiconductor device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JPS58118154A (en) Semiconductor ic device
JPH03185817A (en) Method of forming semiconductor film
JPS59213126A (en) Manufacture of diamond semiconductor element
JPS5324277A (en) Semiconductor devic e and its production
JPS57194518A (en) Manufacture of polycrystalline silicon
JPS5673697A (en) Manufacture of single crystal thin film
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS59155121A (en) Manufacture of semiconductor thin film
JPS58206163A (en) Manufacture of thin film semiconductor device
JPS57208124A (en) Manufacture of semiconductor device
JPS6159820A (en) Manufacture of semiconductor device
JPS5918196A (en) Preparation of thin film of single crystal
JPS56135972A (en) Manufacture of semiconductor device
JPS62123716A (en) Manufacture of semiconductor device
JPS5635412A (en) Manufacture of single crystal semiconductor film
JPS5247673A (en) Process for production of silicon crystal film
JPS5743455A (en) Complementary type semiconductor device
DE2837800A1 (en) Wiring pattern prodn. on semiconductor - by ion implantation doping of amorphous layer and selective conversion to polycrystalline form by intense light
JPS58151042A (en) Semiconductor device and manufacture thereof
JPS6292361A (en) Complementary type semiconductor device
JPS549592A (en) Luminous semiconductor element
JPS5717145A (en) Semiconductor device and manufacture therefor
JPS57159013A (en) Manufacture of semiconductor thin film
JPS53126866A (en) Production of semiconductor wafers
JPH02263789A (en) Silicon substrate having diamond single crystalline film and its production