JPS59124163A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS59124163A
JPS59124163A JP57231521A JP23152182A JPS59124163A JP S59124163 A JPS59124163 A JP S59124163A JP 57231521 A JP57231521 A JP 57231521A JP 23152182 A JP23152182 A JP 23152182A JP S59124163 A JPS59124163 A JP S59124163A
Authority
JP
Japan
Prior art keywords
atom
film
ge
thin
characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57231521A
Inventor
Yutaka Hirai
Takashi Nakagiri
Yoshiyuki Osada
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP57231521A priority Critical patent/JPS59124163A/en
Priority claimed from DE19833331601 external-priority patent/DE3331601C2/de
Publication of JPS59124163A publication Critical patent/JPS59124163A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain a semiconductor element characterized by excellent electric characteristics and small aging value, with a good yield rate, by using a thin Si.Ge film, which includes H atoms of 3 atom % or less. CONSTITUTION:On a glass plate 101, e.g., SiH4 and GeH2 are dilluted by H2 or the like and reacted in a specified deivce, and a thin polycrystal Si.Ge film 102 is formed. Source and drain electrodes 103 and 104 are provided through insulating films 107 and 108. The surface is coated by an insulating film 105. A gate electrode 106 is attached. Thus a typical thin film FET is formed. In this case, the H atoms included in the thin film 102 are mainly pesent in the gain boundary of the polycrystal Si.Ge. When the quantity of the H is large, the H is included in the double or triple bond or in a free state. The characteristics of the element are deteriorated by said H in the unstable state. When the quantity of H inclusion in the thin film is restricted to 0.01-3 atom%, optimally to 0.1-1 atom %, ageing is reduced, the characteristics are excellent, dispersion is reduced, and the yield rate is improved.
JP57231521A 1982-12-29 1982-12-29 Semiconductor element Pending JPS59124163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57231521A JPS59124163A (en) 1982-12-29 1982-12-29 Semiconductor element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57231521A JPS59124163A (en) 1982-12-29 1982-12-29 Semiconductor element
DE19833331601 DE3331601C2 (en) 1982-09-02 1983-09-01
US06/937,432 US4740829A (en) 1982-09-02 1986-12-03 Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration

Publications (1)

Publication Number Publication Date
JPS59124163A true JPS59124163A (en) 1984-07-18

Family

ID=16924782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231521A Pending JPS59124163A (en) 1982-12-29 1982-12-29 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS59124163A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254661A (en) * 1984-05-14 1985-12-16 Energy Conversion Devices Inc Improved thin film field effect transistor compatible with integrated circuit and method of producing same
JPH0823099A (en) * 1994-03-14 1996-01-23 Natl Science Council Of Roc Polycrystalline thin film transistor and its manufacture
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS55154726A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254661A (en) * 1984-05-14 1985-12-16 Energy Conversion Devices Inc Improved thin film field effect transistor compatible with integrated circuit and method of producing same
JPS60254660A (en) * 1984-05-14 1985-12-16 Energy Conversion Devices Inc Thin film field effect transistor and method of producing same
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
JPH0823099A (en) * 1994-03-14 1996-01-23 Natl Science Council Of Roc Polycrystalline thin film transistor and its manufacture

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