JPS59124163A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS59124163A JPS59124163A JP57231521A JP23152182A JPS59124163A JP S59124163 A JPS59124163 A JP S59124163A JP 57231521 A JP57231521 A JP 57231521A JP 23152182 A JP23152182 A JP 23152182A JP S59124163 A JPS59124163 A JP S59124163A
- Authority
- JP
- Japan
- Prior art keywords
- atom
- film
- ge
- thin
- characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0 abstract title 2
- 239000010408 films Substances 0 abstract 4
- 125000004429 atoms Chemical group 0 abstract 3
- 239000010409 thin films Substances 0 abstract 3
- 230000032683 aging Effects 0 abstract 2
- 125000004435 hydrogen atoms Chemical group data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [H]* 0 abstract 2
- 230000002829 reduced Effects 0 abstract 2
- 239000006185 dispersions Substances 0 abstract 1
- 125000001590 germanediyl group Chemical group 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[H][Ge]([H])(*)* 0 abstract 1
- 239000011521 glass Substances 0 abstract 1
- 230000001976 improved Effects 0 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain a semiconductor element characterized by excellent electric characteristics and small aging value, with a good yield rate, by using a thin Si.Ge film, which includes H atoms of 3 atom % or less. CONSTITUTION:On a glass plate 101, e.g., SiH4 and GeH2 are dilluted by H2 or the like and reacted in a specified deivce, and a thin polycrystal Si.Ge film 102 is formed. Source and drain electrodes 103 and 104 are provided through insulating films 107 and 108. The surface is coated by an insulating film 105. A gate electrode 106 is attached. Thus a typical thin film FET is formed. In this case, the H atoms included in the thin film 102 are mainly pesent in the gain boundary of the polycrystal Si.Ge. When the quantity of the H is large, the H is included in the double or triple bond or in a free state. The characteristics of the element are deteriorated by said H in the unstable state. When the quantity of H inclusion in the thin film is restricted to 0.01-3 atom%, optimally to 0.1-1 atom %, ageing is reduced, the characteristics are excellent, dispersion is reduced, and the yield rate is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57231521A JPS59124163A (en) | 1982-12-29 | 1982-12-29 | Semiconductor element |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57231521A JPS59124163A (en) | 1982-12-29 | 1982-12-29 | Semiconductor element |
| DE19833331601 DE3331601C2 (en) | 1982-09-02 | 1983-09-01 | |
| US06/937,432 US4740829A (en) | 1982-09-02 | 1986-12-03 | Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59124163A true JPS59124163A (en) | 1984-07-18 |
Family
ID=16924782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57231521A Pending JPS59124163A (en) | 1982-12-29 | 1982-12-29 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59124163A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254661A (en) * | 1984-05-14 | 1985-12-16 | Energy Conversion Devices Inc | Improved thin film field effect transistor compatible with integrated circuit and method of producing same |
| JPH0823099A (en) * | 1994-03-14 | 1996-01-23 | Natl Science Council Of Roc | Polycrystalline thin film transistor and its manufacture |
| US6566175B2 (en) | 1990-11-09 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550663A (en) * | 1978-10-07 | 1980-04-12 | Shunpei Yamazaki | Semiconductor device and method of fabricating the same |
| JPS55154726A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Manufacture of semiconductor device |
-
1982
- 1982-12-29 JP JP57231521A patent/JPS59124163A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550663A (en) * | 1978-10-07 | 1980-04-12 | Shunpei Yamazaki | Semiconductor device and method of fabricating the same |
| JPS55154726A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60254661A (en) * | 1984-05-14 | 1985-12-16 | Energy Conversion Devices Inc | Improved thin film field effect transistor compatible with integrated circuit and method of producing same |
| JPS60254660A (en) * | 1984-05-14 | 1985-12-16 | Energy Conversion Devices Inc | Thin film field effect transistor and method of producing same |
| US6566175B2 (en) | 1990-11-09 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
| US7507615B2 (en) | 1990-11-09 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing gate insulated field effect transistors |
| JPH0823099A (en) * | 1994-03-14 | 1996-01-23 | Natl Science Council Of Roc | Polycrystalline thin film transistor and its manufacture |
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