JPS5550663A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS5550663A
JPS5550663A JP12402178A JP12402178A JPS5550663A JP S5550663 A JPS5550663 A JP S5550663A JP 12402178 A JP12402178 A JP 12402178A JP 12402178 A JP12402178 A JP 12402178A JP S5550663 A JPS5550663 A JP S5550663A
Authority
JP
Japan
Prior art keywords
film
sio
substrate
ne
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12402178A
Other versions
JPS6245712B2 (en
Inventor
Shunpei Yamazaki
Original Assignee
Shunpei Yamazaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shunpei Yamazaki filed Critical Shunpei Yamazaki
Priority to JP53124021A priority Critical patent/JPS6245712B2/ja
Publication of JPS5550663A publication Critical patent/JPS5550663A/en
Publication of JPS6245712B2 publication Critical patent/JPS6245712B2/ja
Application status is Expired legal-status Critical

Links

Abstract

PURPOSE: To effectively remove the recombination center of a semiconductor device by forming at least part of the channel region of an IGFET by non-monocrystalline semiconductor and containing more than 0.1mol% of H2, He, Ne or HCl therein.
CONSTITUTION: Thick SiO2 films 3 are formed on both ends of a p-type silicon substrate 1, and a thin SiO2 film 2 is coated on the surface of the substrate 1 surrouned by the film 3. Then, the film 2 is sufficiently annealed, a silicon layer 4 is provided thereon by means of reduced pressure vapor growing process, and more than 0.1mol% of inert gas such as H2, He, Ne, etc. or halide such as HCl or the like is added thereto in an atmosphere of the pressure higher than 1×10-2mmHg to thereby form channel region 9 consisting of the layers 2 and 4 thus inductively queued. Then, a gate SiO2 film 12 and Mo or the like gate electrode 11 are provided on the region 9 by an ordinal process, patterned to remove the regions 9 of both sides thereof, and n+-type source and drain regions 5 and 6 are formed in the exposed substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
JP53124021A 1978-10-07 1978-10-07 Expired JPS6245712B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53124021A JPS6245712B2 (en) 1978-10-07 1978-10-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53124021A JPS6245712B2 (en) 1978-10-07 1978-10-07

Publications (2)

Publication Number Publication Date
JPS5550663A true JPS5550663A (en) 1980-04-12
JPS6245712B2 JPS6245712B2 (en) 1987-09-28

Family

ID=14875059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53124021A Expired JPS6245712B2 (en) 1978-10-07 1978-10-07

Country Status (1)

Country Link
JP (1) JPS6245712B2 (en)

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS58123771A (en) * 1982-01-19 1983-07-23 Canon Inc Semiconductor element
JPS58123772A (en) * 1982-01-19 1983-07-23 Canon Inc Semiconductor element
JPS58123770A (en) * 1982-01-18 1983-07-23 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and its manufacture
JPS58197775A (en) * 1982-05-13 1983-11-17 Canon Inc Thin film transistor
JPS58199564A (en) * 1982-05-17 1983-11-19 Canon Inc Semiconductor element
JPS5943575A (en) * 1982-09-02 1984-03-10 Canon Inc Semiconductor element
JPS5965479A (en) * 1982-10-05 1984-04-13 Nec Corp Thin film transistor and manufacture thereof
JPS59124163A (en) * 1982-12-29 1984-07-18 Canon Inc Semiconductor element
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi Semiconductor integrated circuit
JPS60136259A (en) * 1983-12-24 1985-07-19 Sony Corp Manufacture of fet
JPH01276726A (en) * 1988-04-28 1989-11-07 Seiko Epson Corp Manufacture of semiconductor device
JPH05243578A (en) * 1992-11-20 1993-09-21 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
JPH05251340A (en) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH05259184A (en) * 1992-11-20 1993-10-08 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPH05343318A (en) * 1980-09-16 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH06125088A (en) * 1984-05-18 1994-05-06 Semiconductor Energy Lab Co Ltd Insulated-gate type field-effect semiconductor device
JPH06333950A (en) * 1994-01-27 1994-12-02 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate field effect semiconductor device
JPH077156A (en) * 1993-09-13 1995-01-10 Sony Corp Thin film field effect transistor
JPH0792498A (en) * 1994-02-14 1995-04-07 Seiko Epson Corp Production of thin-film transistor
JPH0799208A (en) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd Manufacture of insulation gate type field effect semiconductor device for liquid crystal display panel
JPH0799316A (en) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd Insulated-gate type field-effect semiconductor device
JPH07176758A (en) * 1984-05-18 1995-07-14 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
JPH07176759A (en) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPH07176746A (en) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd Insulated-gate type field-effect semiconductor device
JPH07183523A (en) * 1994-11-25 1995-07-21 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate field effect semiconductor device
JPH0851221A (en) * 1995-09-01 1996-02-20 Semiconductor Energy Lab Co Ltd Insulated gate field-effect semiconductor device for liquid crystal display panel, and its manufacture
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH09181326A (en) * 1984-05-18 1997-07-11 Semiconductor Energy Lab Co Ltd Insulated gate field-effect semiconductor device
JPH09181327A (en) * 1996-11-29 1997-07-11 Semiconductor Energy Lab Co Ltd Insulated gate field-effect semiconductor device
JPH09186344A (en) * 1996-11-29 1997-07-15 Semiconductor Energy Lab Co Ltd Method for manufacturing insulating gate type semiconductor device
US5766977A (en) * 1995-03-27 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (en) * 1973-09-12 1975-05-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (en) * 1973-09-12 1975-05-15

Cited By (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH05343318A (en) * 1980-09-16 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021366B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021367B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021365B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS58123770A (en) * 1982-01-18 1983-07-23 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and its manufacture
JPS58123772A (en) * 1982-01-19 1983-07-23 Canon Inc Semiconductor element
JPS58123771A (en) * 1982-01-19 1983-07-23 Canon Inc Semiconductor element
JPS58197775A (en) * 1982-05-13 1983-11-17 Canon Inc Thin film transistor
JPS58199564A (en) * 1982-05-17 1983-11-19 Canon Inc Semiconductor element
JPH0658966B2 (en) * 1982-05-17 1994-08-03 キヤノン株式会社 Semiconductor element
JPS5943575A (en) * 1982-09-02 1984-03-10 Canon Inc Semiconductor element
JPS5965479A (en) * 1982-10-05 1984-04-13 Nec Corp Thin film transistor and manufacture thereof
JPS59124163A (en) * 1982-12-29 1984-07-18 Canon Inc Semiconductor element
JPS6068654A (en) * 1983-08-25 1985-04-19 Tadahiro Omi Semiconductor integrated circuit
JPS60136259A (en) * 1983-12-24 1985-07-19 Sony Corp Manufacture of fet
JPH0457098B2 (en) * 1983-12-24 1992-09-10 Sony Corp
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH06125088A (en) * 1984-05-18 1994-05-06 Semiconductor Energy Lab Co Ltd Insulated-gate type field-effect semiconductor device
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPH07176758A (en) * 1984-05-18 1995-07-14 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
JPH09181326A (en) * 1984-05-18 1997-07-11 Semiconductor Energy Lab Co Ltd Insulated gate field-effect semiconductor device
JPH01276726A (en) * 1988-04-28 1989-11-07 Seiko Epson Corp Manufacture of semiconductor device
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JPH05251340A (en) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH05259184A (en) * 1992-11-20 1993-10-08 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPH05243578A (en) * 1992-11-20 1993-09-21 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
JPH077156A (en) * 1993-09-13 1995-01-10 Sony Corp Thin film field effect transistor
JPH06333950A (en) * 1994-01-27 1994-12-02 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate field effect semiconductor device
JPH0792498A (en) * 1994-02-14 1995-04-07 Seiko Epson Corp Production of thin-film transistor
JPH0799316A (en) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd Insulated-gate type field-effect semiconductor device
JPH0799208A (en) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd Manufacture of insulation gate type field effect semiconductor device for liquid crystal display panel
JPH07183523A (en) * 1994-11-25 1995-07-21 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate field effect semiconductor device
JPH07176759A (en) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPH07176746A (en) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd Insulated-gate type field-effect semiconductor device
US5766977A (en) * 1995-03-27 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JPH0851221A (en) * 1995-09-01 1996-02-20 Semiconductor Energy Lab Co Ltd Insulated gate field-effect semiconductor device for liquid crystal display panel, and its manufacture
JPH09186344A (en) * 1996-11-29 1997-07-15 Semiconductor Energy Lab Co Ltd Method for manufacturing insulating gate type semiconductor device
JPH09181327A (en) * 1996-11-29 1997-07-11 Semiconductor Energy Lab Co Ltd Insulated gate field-effect semiconductor device

Also Published As

Publication number Publication date
JPS6245712B2 (en) 1987-09-28

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