JPS5550660A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5550660A
JPS5550660A JP12262778A JP12262778A JPS5550660A JP S5550660 A JPS5550660 A JP S5550660A JP 12262778 A JP12262778 A JP 12262778A JP 12262778 A JP12262778 A JP 12262778A JP S5550660 A JPS5550660 A JP S5550660A
Authority
JP
Japan
Prior art keywords
layer
film
mask
silicon layer
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12262778A
Other languages
Japanese (ja)
Other versions
JPS6152987B2 (en
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12262778A priority Critical patent/JPS5550660A/en
Priority to US06/078,783 priority patent/US4309224A/en
Publication of JPS5550660A publication Critical patent/JPS5550660A/en
Publication of JPS6152987B2 publication Critical patent/JPS6152987B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To accelerate the operating speed of a semiconductor device by decreasing the resistance thereof without increasing the thickness of a polycrystal silicon layer doped with impurities in the device by illuminating laser light through an insulating layer to the silicon layer when forming an electrode or wire using the silicon layer.
CONSTITUTION: Thick field SiO2 films 12 are formed on both ends of a p-type silicon substrate 11, and a thin gate SiO2 film 13 is coated on the surface of the substrate 11 surrounded by the film 12 to then a polycrystal silicon layer 14 is grown on the entire surface in vapor. N-type impurities are doped with the layer 14 to impart a conductivity to the layer 14. Then, a mask 15 of photoresist film is provided, and etched to thereby retain only a layer 14' becoming a gate electrode or a wire. Then, the mask 14 is removed, N-type source and drain regions 16 and 17 are formed by an ion implantation process with the layer 14' as a mask, a PSG film 18 is coated on the entire surface, and heat treated to thereby form a smooth surface by means of reflow. Then, laser light 30 is illuminated through the film 18 to the layer 14' to thereby lower the resistance to predetermined value, and openings are provided to mount aluminum layers 19a and 19b making contact with the regions 16 and 17.
COPYRIGHT: (C)1980,JPO&Japio
JP12262778A 1978-10-06 1978-10-06 Manufacturing of semiconductor device Granted JPS5550660A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12262778A JPS5550660A (en) 1978-10-06 1978-10-06 Manufacturing of semiconductor device
US06/078,783 US4309224A (en) 1978-10-06 1979-09-25 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12262778A JPS5550660A (en) 1978-10-06 1978-10-06 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5550660A true JPS5550660A (en) 1980-04-12
JPS6152987B2 JPS6152987B2 (en) 1986-11-15

Family

ID=14840637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12262778A Granted JPS5550660A (en) 1978-10-06 1978-10-06 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5550660A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179582U (en) * 1988-06-10 1989-12-22
JPH0421520U (en) * 1990-06-14 1992-02-24

Also Published As

Publication number Publication date
JPS6152987B2 (en) 1986-11-15

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