JPS5610945A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5610945A
JPS5610945A JP8647579A JP8647579A JPS5610945A JP S5610945 A JPS5610945 A JP S5610945A JP 8647579 A JP8647579 A JP 8647579A JP 8647579 A JP8647579 A JP 8647579A JP S5610945 A JPS5610945 A JP S5610945A
Authority
JP
Japan
Prior art keywords
layer
film
electrode
gate electrode
extension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8647579A
Other languages
Japanese (ja)
Other versions
JPS621256B2 (en
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8647579A priority Critical patent/JPS5610945A/en
Publication of JPS5610945A publication Critical patent/JPS5610945A/en
Publication of JPS621256B2 publication Critical patent/JPS621256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To avoid disconnection of a gate electrode formed later in a semiconductor device by forming a semiconductor layer on an insulating substrate, altering a field to an insulating layer, forming a gate electrode and its extension from the semiconductor layer becoming an island state to the insulating layer, and removing the insulating layer disposed except the gate electrode and its extension. CONSTITUTION:An Si layer 25 is epitaxially grown as a semiconductor layer on a sapphire substrate 21, is thermally oxidized to alter only the surface layer into an SiO2 film 22, and an Si3N4 film 23 is coated on the entire surface thereof. Then, the laminated films of a field portion are etched to reduce the thickness thereof, are then heat treated to expand its volume, and an Si layer 25 is surrounded in an island state by the thick field SiO2 film 24 thus produced. Thereafter, both films 23 and 22 are removed, are again heat treated, a gate SiO2 film 26 is formed thereat, and a polycrystalline Si gate electrode 27 made of an electrode and a wire extension connected thereto is formed thereon. Subsequently, the film 26 is retained only under the electrode 27, other film 26 is removed, source and drain regions 30 and 31 are diffused and formed in the exposed region 25 at both sides of the electrode 27, and aluminum electrodes 33 and 34 are coated thereon.
JP8647579A 1979-07-10 1979-07-10 Manufacture of semiconductor device Granted JPS5610945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8647579A JPS5610945A (en) 1979-07-10 1979-07-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8647579A JPS5610945A (en) 1979-07-10 1979-07-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5610945A true JPS5610945A (en) 1981-02-03
JPS621256B2 JPS621256B2 (en) 1987-01-12

Family

ID=13887985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8647579A Granted JPS5610945A (en) 1979-07-10 1979-07-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5610945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186915A (en) * 2007-01-29 2008-08-14 Toshiba Corp Semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186915A (en) * 2007-01-29 2008-08-14 Toshiba Corp Semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JPS621256B2 (en) 1987-01-12

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