JPS553614A - Insulating gate type fet device and its manufacturing method - Google Patents

Insulating gate type fet device and its manufacturing method

Info

Publication number
JPS553614A
JPS553614A JP7420078A JP7420078A JPS553614A JP S553614 A JPS553614 A JP S553614A JP 7420078 A JP7420078 A JP 7420078A JP 7420078 A JP7420078 A JP 7420078A JP S553614 A JPS553614 A JP S553614A
Authority
JP
Japan
Prior art keywords
film
sio
substrate
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7420078A
Other languages
Japanese (ja)
Inventor
Yoshihisa Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP7420078A priority Critical patent/JPS553614A/en
Publication of JPS553614A publication Critical patent/JPS553614A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain short channel IGFETs which do not exhibit punch-through phenomena, by disposing at lest either one of source or drain region on the level equal to or above the channel plane.
CONSTITUTION: After coating the given region on a P-type Si substrate 10 with a Si3 N4 film 16, a heat treatment is applied to it to grow a thick field SiO2 film 14 on the edge portion thereof, thereby changing the film 16 into a thin gate SiO2 film 18. Next, a N-type polycrystal Si layer 20 is formed on the entire surface thereof, and only a gate SiO2 film 18G and a gate electrode layer 20G disposed thereon are left behind through patterning and the surface as well as the side thereof are covered with a SiO2 film 22. Then, a source region 24S and a drain region 24D are formed by doping impurities through epitaxial growth of a monocrystal Si layer for the substrate 10 exposed between the films 22G and 14. Like these, the regions 24S and 24D are positioned above the channel region of the substrate 10 located therebetween.
COPYRIGHT: (C)1980,JPO&Japio
JP7420078A 1978-06-21 1978-06-21 Insulating gate type fet device and its manufacturing method Pending JPS553614A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7420078A JPS553614A (en) 1978-06-21 1978-06-21 Insulating gate type fet device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7420078A JPS553614A (en) 1978-06-21 1978-06-21 Insulating gate type fet device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS553614A true JPS553614A (en) 1980-01-11

Family

ID=13540295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7420078A Pending JPS553614A (en) 1978-06-21 1978-06-21 Insulating gate type fet device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS553614A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219520A (en) * 1996-02-05 1997-08-19 Lg Semicon Co Ltd Transistor and manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509383A (en) * 1973-05-22 1975-01-30
JPS51108775A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho
JPS52156574A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Mis type semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509383A (en) * 1973-05-22 1975-01-30
JPS51108775A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho
JPS52156574A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Mis type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219520A (en) * 1996-02-05 1997-08-19 Lg Semicon Co Ltd Transistor and manufacture thereof

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