JPS553614A - Insulating gate type fet device and its manufacturing method - Google Patents
Insulating gate type fet device and its manufacturing methodInfo
- Publication number
- JPS553614A JPS553614A JP7420078A JP7420078A JPS553614A JP S553614 A JPS553614 A JP S553614A JP 7420078 A JP7420078 A JP 7420078A JP 7420078 A JP7420078 A JP 7420078A JP S553614 A JPS553614 A JP S553614A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- substrate
- region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain short channel IGFETs which do not exhibit punch-through phenomena, by disposing at lest either one of source or drain region on the level equal to or above the channel plane.
CONSTITUTION: After coating the given region on a P-type Si substrate 10 with a Si3 N4 film 16, a heat treatment is applied to it to grow a thick field SiO2 film 14 on the edge portion thereof, thereby changing the film 16 into a thin gate SiO2 film 18. Next, a N-type polycrystal Si layer 20 is formed on the entire surface thereof, and only a gate SiO2 film 18G and a gate electrode layer 20G disposed thereon are left behind through patterning and the surface as well as the side thereof are covered with a SiO2 film 22. Then, a source region 24S and a drain region 24D are formed by doping impurities through epitaxial growth of a monocrystal Si layer for the substrate 10 exposed between the films 22G and 14. Like these, the regions 24S and 24D are positioned above the channel region of the substrate 10 located therebetween.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7420078A JPS553614A (en) | 1978-06-21 | 1978-06-21 | Insulating gate type fet device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7420078A JPS553614A (en) | 1978-06-21 | 1978-06-21 | Insulating gate type fet device and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS553614A true JPS553614A (en) | 1980-01-11 |
Family
ID=13540295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7420078A Pending JPS553614A (en) | 1978-06-21 | 1978-06-21 | Insulating gate type fet device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS553614A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09219520A (en) * | 1996-02-05 | 1997-08-19 | Lg Semicon Co Ltd | Transistor and manufacture thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS509383A (en) * | 1973-05-22 | 1975-01-30 | ||
JPS51108775A (en) * | 1975-03-20 | 1976-09-27 | Fujitsu Ltd | Handotaisochino seizohoho |
JPS52156574A (en) * | 1976-06-23 | 1977-12-27 | Hitachi Ltd | Mis type semiconductor device |
-
1978
- 1978-06-21 JP JP7420078A patent/JPS553614A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS509383A (en) * | 1973-05-22 | 1975-01-30 | ||
JPS51108775A (en) * | 1975-03-20 | 1976-09-27 | Fujitsu Ltd | Handotaisochino seizohoho |
JPS52156574A (en) * | 1976-06-23 | 1977-12-27 | Hitachi Ltd | Mis type semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09219520A (en) * | 1996-02-05 | 1997-08-19 | Lg Semicon Co Ltd | Transistor and manufacture thereof |
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