JPS5638838A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5638838A
JPS5638838A JP11443279A JP11443279A JPS5638838A JP S5638838 A JPS5638838 A JP S5638838A JP 11443279 A JP11443279 A JP 11443279A JP 11443279 A JP11443279 A JP 11443279A JP S5638838 A JPS5638838 A JP S5638838A
Authority
JP
Japan
Prior art keywords
film
drain
single crystal
substrate
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11443279A
Other languages
Japanese (ja)
Inventor
Susumu Sato
Masaharu Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP11443279A priority Critical patent/JPS5638838A/en
Publication of JPS5638838A publication Critical patent/JPS5638838A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To eliminate breaking of a lead wire by a method wherein an impurity doped region is formed on a semiconductor substrate and after formation of single crystal on the impurity doped region of the substrate and polycrystal on the other section, the latter is removed and then a metal lead is provided on the single crystal. CONSTITUTION:An n<+> type sourced and drain 3 is formed by providing a mask 2 of a field SiO2 film on a p type Si substrate 1. After a field SiO2 film 4 and a gate SiO2 film 5 are formed on the surface of the substrate 1, an Si film 6 is formed on the whole surface. And on the source and drain, an Si film is formed in single crystal and on the other side of the SiO2 film, an Si film is formed in polycrystal. After removal of the polycrystal Si, an Al film is formed on the field film as an electrode lead for the source and drain on the single crystal Si. Hence, a penetration on the source and drain is eliminated and a lead having no breakage of wire can be formed. This method is applicable for a bipolar and a JFET besides an MOSFET.
JP11443279A 1979-09-06 1979-09-06 Manufacture of semiconductor device Pending JPS5638838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11443279A JPS5638838A (en) 1979-09-06 1979-09-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11443279A JPS5638838A (en) 1979-09-06 1979-09-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5638838A true JPS5638838A (en) 1981-04-14

Family

ID=14637563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11443279A Pending JPS5638838A (en) 1979-09-06 1979-09-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638838A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852872A (en) * 1981-09-24 1983-03-29 Nec Corp Semiconductor integrated circuit device
JPS58202552A (en) * 1982-05-21 1983-11-25 Toshiba Corp Semiconductor device having single crystal si-al wiring structure and manufacture thereof
JPS61248471A (en) * 1985-04-26 1986-11-05 Hitachi Ltd Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134576A (en) * 1974-04-01 1975-10-24
JPS52127185A (en) * 1976-04-19 1977-10-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS52144273A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Forming method of electrode in semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134576A (en) * 1974-04-01 1975-10-24
JPS52127185A (en) * 1976-04-19 1977-10-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS52144273A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Forming method of electrode in semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852872A (en) * 1981-09-24 1983-03-29 Nec Corp Semiconductor integrated circuit device
JPS58202552A (en) * 1982-05-21 1983-11-25 Toshiba Corp Semiconductor device having single crystal si-al wiring structure and manufacture thereof
JPS61248471A (en) * 1985-04-26 1986-11-05 Hitachi Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5638838A (en) Manufacture of semiconductor device
JPS5633881A (en) Manufacture of semiconductor device
JPS5678155A (en) Semiconductor device and manufacture thereof
JPS56155531A (en) Manufacture of semiconductor device
JPS5687361A (en) Semiconductor device and its manufacture
JPS5710267A (en) Semiconductor device
JPS5585073A (en) Manufacture of insulation gate type electric field effect transistor
JPS5687339A (en) Manufacture of semiconductor device
JPS57141966A (en) Manufacture of semiconductor device
JPS5651871A (en) Manufacture of complementary type mos semiconductor device
JPS6457673A (en) Manufacture of thin film transistor
JPS57192077A (en) Semiconductor device
JPS5748248A (en) Manufacture of semiconductor device
JPS6477172A (en) Manufacture of semiconductor device
JPS5449063A (en) Semiconductor device and its manufacture
JPS57128943A (en) Insulation isolated semiconductor integrated device and manufacture thereof
JPS6425482A (en) Manufacture of thin film transistor
JPS5764972A (en) Silicon gate type field-effect semiconductor device and manufacture thereof
JPS5758364A (en) Semiconductor integrated circuit device
JPS553614A (en) Insulating gate type fet device and its manufacturing method
JPS57192073A (en) Semiconductor device
JPS6449268A (en) Manufacture of semiconductor device
JPS5491185A (en) Semiconductor divece
JPS5685866A (en) Mos semiconductor device and manufacture thereof