JPS6477172A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477172A JPS6477172A JP23233987A JP23233987A JPS6477172A JP S6477172 A JPS6477172 A JP S6477172A JP 23233987 A JP23233987 A JP 23233987A JP 23233987 A JP23233987 A JP 23233987A JP S6477172 A JPS6477172 A JP S6477172A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- sio2
- recrystallization
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 238000001953 recrystallisation Methods 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To eliminate abnormal impurity diffusion attributable to grain boundaries for a decrease in leak currents, to improve carriers in a channel region in terms of mobility, and to increase device operating speeds by a method wherein a gate electrode is built by self-alignment on a single-crystal region formed by laser-aided recrystallization. CONSTITUTION:An SiO2 film 12 is formed on a silicon substrate 11 and, on the film 12, a polycrystalline silicon film 13 is deposited for recrystallization and, on the film 13, an SiO2 film 16 and a reflection reducing Si3N4 film 16, both provided with an opening 17, are formed. The polycrystalline silicon is then exposed to laser for recrystallization, which results in a single-crystal region 18, free of grain boundaries, in the opening 17. The single-crystal region 18 is etched halfway, with the reflection reducing Si3N4 film 16 serving as a mask, for the formation of a recess 18a. Next, an SiO2 film 20 and a polycrystalline silicon film 19a are deposited, an SiO2 film 21 is placed by application, and then a flattening process is accomplished for the retention of the applied SiO2 film 21 in a recess in the polycrystalline silicon film 19a. The applied SiO2 film 21 in the recess serves as a mask in a next process wherein the polycrystalline silicon film 19a is vertically etched for the construction of a gate electrode 19.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23233987A JPS6477172A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23233987A JPS6477172A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6477172A true JPS6477172A (en) | 1989-03-23 |
Family
ID=16937654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23233987A Pending JPS6477172A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477172A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120668A (en) * | 1991-07-10 | 1992-06-09 | Ibm Corporation | Method of forming an inverse T-gate FET transistor |
-
1987
- 1987-09-18 JP JP23233987A patent/JPS6477172A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120668A (en) * | 1991-07-10 | 1992-06-09 | Ibm Corporation | Method of forming an inverse T-gate FET transistor |
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