JPS5943575A - Semiconductor element - Google Patents

Abstract

PURPOSE:To obtain a field effect thin transistor which has high performance, high reliability and high stability by composing a main part of a polycrystalline germanium semiconductor layer which contains specific amount of hydrogen. CONSTITUTION:GeH4 gas which is diluted with H2 gas and B2H6 gas which is diluted with H2 gas are used as reactive gases, a glow discharge is performed to precipitate polycrystalline germanium thin film 401, a source electrode 403 and a drain electrode 404 are then formed, an SiNH film 405 are accumulated, aluminum is deposited, thereby forming a source electrode leading electrode 408, a drain electrode leading electrode 409 and a gate electrode 410. The quantity of hydrogen which is contained in a polycrystalline germanium thin film is preferably 0.01-3at%. When hydrogen amount exceeds 3at%, effective carrier mobility mueff decreases, an output drain current decreases with time, and a threshold voltage VTH varies.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices such as field effect transistors.
-1 More specifically, the present invention relates to a semiconductor device whose main parts are entirely composed of a polycrystalline germanium thin film semiconductor layer.

Recently, the scanning circuit section or liquid crystal (hereinafter referred to as LC) of image scanning devices such as elongated one-dimensional photosensors and large-area two-dimensional photosensors for image reading has been developed. As the drive circuits of image display devices using EL, electroluminescence (hereinafter referred to as EL), and electrochromic materials (hereinafter referred to as EC) become larger, silicon formed on the north side of a predetermined substrate is used. It has been proposed to form a thin film as a material. Conventionally, solicon thin films include hydrogenated amorphous silicon thin films, polycrystalline silicon thin films,
- Attempts are being made to consider 16γ membranes. Of course, the effective carrier mobility (hereinafter referred to as μeff
) is 50-100. , i/v-sccijJlj-7's statement=J, and in a film transistor (TI"T) using an amorphous silicon thin film, μeff is about 0.1 c
Since it is as small as J/V.5ei, it cannot be said that it is necessarily suitable for constructing the above circuit section. -force,
The μef of polycrystalline silicon thin films is higher than that of amorphous silicon thin films.
However, in order to meet the above requirements, an annealing process is required, which complicates the process, and it may not be possible to obtain a uniform film over the eyes and the dog's face. There were also some problems.

On the other hand, formation of polycrystalline germanium thin film 17j: Conventionally, a vacuum evaporation method was attempted, and the pole mobility (hereinafter referred to as "H") of the film obtained by this method was extremely large, several hundreds of c, d/V-formula. It is expected that μeff will also be large. 111'L, usually polycrystalline germanium j # Hk
Because the accessor level with a higher degree than L'f is formed, controllability to 11-type or r)-type semiconductors is poor, and polycrystalline germanium thin film semiconductor devices are not in practical use. 4-6 几i(l: J was chosen because it is difficult to form a so-called intrinsic semiconductor, and the doping efficiency of germanium l and -f'J bodies by impurity addition is extremely low.

In addition, the germanium j-charge film undergoes a thermal transformation (conversion from an 11-type semiconductor to an r, p-type half-quadruple semiconductor by heat treatment).
It is unsuitable for the production of devices including heat radiation culms because a phenomenon called ``Thcrrna77 Conversion'' occurs. In this way, it appears that the conventionally produced devices made from polycrystalline gelmer and RAM thin films did not fully exhibit the desired erectile strength and reliability.

The present invention C-↓) 2n12 In view of the various points '11. The overall purpose is to provide semiconductor devices with high performance and high reliability. In addition, there are very few impurity levels in the forbidden band of the semiconductor, that is, polycrystalline aluminum with extremely good doping efficiency of impurity addition m that can be controlled. :”
i'rest;) 4 children with 4 "li1 'Af k tj target and −J. ψ(・(=p(r(base +:i h F IN
The formed polycrystalline lumen, W, .:, I-J I
fζ) half, one body 5j, moon, ISI in quality Y
Provides a thin film transistor with I・ii (1 pb high and stable 1 i IJ) 0−i, b field effect j(,y),−i,=
,',h・``1 target, Snake.Y1 is excellent/(
, multi-4, +1 crystalline gel, field-effect star-type 'j'yQ' using a dium semiconductor layer, Han Juntai yi'”:
= (including s, jjJ) -1S is [1 and -J.

Le1. The uninvented semiconductor layer to achieve the 11th goal is a polycrystalline germanium conductor 1- containing hydrogen at 3 ATCO's former 0% company, the main part of which is f.
Let Ji, which is formed by lrj, be 4'r1.

A flat conductor element fabricated using a polycrystalline germanium thin film containing hydrogen acid as described above is unique!
2) E can be achieved in which j' is well maintained, does not change over time, and fjl, and the step, 1'7, and variation of the elements are significantly improved. Therefore, it is possible to stably provide a display using LC, L, C, etc., or a scanning circuit, a driving circuit, etc. for an image device, etc.

Created using the polycrystalline germanium thin film of the present invention as a material.
A field effect thin film transistor (TPT) as an example of a semiconductor element is known as a transistor using a semiconductor layer, an electrode layer, and an insulating layer. That is, the source ′i with an ohmic l contact adjacent to the semiconductor layer
One voltage is applied between the L pole and the drain electrode, and the channel current flowing therein is modulated by the bias voltage applied to the gate electrode provided through the insulating layer.

FIG. 1 shows an example of a typical basic structure of such a TPT. A source electrode 103 and a drain electrode 104 are provided on and in contact with a semiconductor layer 102 provided on an insulating substrate lO1, and an insulating layer 105 is provided so as to cover these.
is provided (bowed, and the insulating layer 105k has 4 poles 10
There are 6.

T F having the structure shown in FIG. 1 in the present invention
In this case, a semiconductor layer 102 (composed of the above-mentioned boiled polycrystalline germanium thin film 71), a semiconductor layer 102 and two electrodes, ie, a source 'sleep electrode 103',
1.;1, the first
[ ] layer 107, self 52 (7) n layer 108 is provided (no 15, ohmic contact)).

Insulating layer 1051 (,', CV D (Chemica
eVapourl) e I) OS i day on), L I
'CV 1. ) (Low Presu re Ch.
(Emical Vapor Deposition)
, or PCV 1. ) (P/FasmaChemic
Noricon nitride formed by aeVapour Deposition), S+O,! A-1zos
Consists of materials such as +.

The reactive gas used to create the polycrystalline Ge/l/manium thin film constituting the semiconductor layer 102 is a substance containing germanium as a 415 atom, such as monogermane (Ge1(4), digemanium). υman(()e2[-1,),
Examples include germane gases such as 1°mane (Ge, H,), and these reactive gases are )-1,,,l~r,
It can also be diluted with a gas such as l-Ic and used.
come.

'JL W 'JJ fruit type'l F T ij gegu-
′+l;, +fi,l A type in which the electrode is at the interface between an insulating layer and a semiconductor layer (Cop
lanar type) and the type (s
It is well known that there are four types for each combination. ;The structure shown in Figure 1 is the above figure.) Copeanar field effect type TF
Although an example called T is shown, the field effect type T according to the present invention
Of course, it is also possible to use FT cigarettes.

In the present invention (d1), the F limit of the amount of hydrogen contained in the polycrystalline germanium thin film constituting the semiconductor layer, which is the main part of the semiconductor element, is set to 620.01 atomic% (hereinafter referred to as t-at, %). On the other hand, the hydrogen contained in the polycrystalline germanium thin film is mainly present in the grain boundaries of polycrystalline germanium17 and is bonded in the form of Ge-1. However, if the amount of hydrogen contained is large, Ge=H2, Ge
=) Hydrogen is expected to be contained in a bonded form such as i3 or in a free state, and transient noises, etc., which are thought to be caused by hydrogen contained in an unstable state such as 1. '7) Many 'p, polycrystalline 'nosimanium F, from 1 rugged fruit! i-Contained in the membrane'J-43 water-'t: j?
: If t is :121↑, 9 > knit, then U here (size transistor hat has poor holding property, 1 gu i, but stably move outside the area 4 [hold ii: ne Z ) turns out to be 1-7.

Also, 1t'L of hydrogen contained in the n'H is 3a'
If t and j%' are larger than Me and E, and the newly created transistor is operated continuously,
No decrease in 1leff was observed.
Changes over time were observed, such as the flow rate decreasing with time and the direct pressure VT) changing.
I'm here.

Therefore, in the present invention, I:1~ hydrogen fingers ζJ contained in the polycrystalline germanium thin film constituting the main part of the semi-hydrogen element,
It is preferable that it is 0.05-2 at, %, and optimally it is 0.05-2 at, %.
, % is preferable.

In accordance with the present invention, the amount of hydrogen contained in the polycrystalline germanium thin film (f) is measured (1:O, tat).

% or more, a hydrogen analyzer (P
The analysis was carried out using a ModR-240 elemental analyzer manufactured by Erkin Elmer. In each case, 5 mg of the sample was loaded into an analyzer holder, the hydrogen weight was measured, and the amount of hydrogen contained in the film was calculated in atomic%.

For microscopic analysis of 0.1at1% or less, secondary ion mass spectrometer-8, EMS-(Cameca G Model I
MS-3f). In the analysis method (
I followed the usual method. That is, in order to prevent charge-up, 200 gold layers are deposited on the thin film, and the ion energy of the primary ion beam is 8 f (eV), the spot size is 8 f (eV), the spot size is 50 μm (+ etching area is 250
Determine the detection intensity ratio of ■1 ions to CUe as
Calculate it.

Furthermore, in order to demonstrate the effects of the present invention, an easy method G was described below regarding the measurement of changes over time in polycrystalline germanium thin film transistors (VC).

First, a h'4-structure ']''FT shown in FIG.
7- between the source 203 and the drain 202 ((drain voltage V
Apply 40V as D2, source 203 and drain 2
The drain current D flowing during the period 02 was measured using an electrometer VC. The rate of change over time was expressed as a percentage by multiplying the amount of variation in drain f(r) by the initial drain current after 500 hours of continuous operation by 100.

'L' F T )Threshold voltage EE (VTR) tri
M OS -F ET (Ietag -Oxide
- Extrapolation of the straight line part in the tile curve [7 horizontal 4 it + VD ij 1 (
Defined by the point that intersects /. ■The value of T11 before and after the change over time was also checked at the same time, and the amount of change (ΔVrH)
is expressed as voltage.

Forming polycrystalline gel manila l, 1l17 film semiconductor layer (
Is the amount of hydrogen contained equal to the amount of f5N fx mentioned above? 11
1 ri) 11 can be done by various methods. 1c11e(41Gel(, Ge, H, etc.) is a method of depositing germanium hydride by glow discharge decomposition method (GD method), (g) sputtering using a target in a gas containing 1A112 or ()cH Method (S P
Including the method of evaporating in a plasma atmosphere (iP method) using a consonant beam, etc., the method of evaporating in an ultra-high vacuum H atmosphere (I-■VD method), CVD-
This can be carried out by a method in which a polycrystalline germanium thin film formed by LPCVD or the like is subjected to 1-i2 plasma treatment.

As disclosed in the present invention, ()J) method, SP method, 1
■) Law, HV D L f Iri 7J-, Board-1i
m Temperature + ffi F more than 500℃T: (approx. 350~50
A polycrystalline germanium thin film that satisfies the objective L of the present invention (within the range of 0° C.) is advantageous in that it uniformly heats the forming plate and can be used as an inexpensive large-area substrate material. Furthermore, it will meet the growing demand for the use of translucent glass substrates in the application of image devices such as substrates for transmissive display elements and substrates for transmissive (side-incident) transmissive transducer elements. 0 ν1j According to unexploded IJI, it is necessary to produce the desired polycrystalline germanium thin film with low High melting point glass,
Resistance of hard guffs, etc., hard glass, and lt1' heat 14
In addition to 1 ceramics, zaphire, vinyl, silicon wafers, etc., tlM low-melting glass, heat-resistant glass, etc. are also used. General low h)
As a glass substrate using upper point glass &, i: , -11 with a softening point temperature of 630 °C (゛Glass, with a softening point of 78 °C
(Hokotsu hard glass at 1℃,
It is conceivable to use ultra-hard glass (JIS I class super 1 quality glass) with a temperature of 820°C.

Of the present invention! The ilJ method has the advantage that the substrate temperature can be kept below the softening point no matter which substrate is used, so that a film can be formed without damaging the substrate.

In the embodiment of the present invention, the substrate glass is mainly glass I, f-ff among ordinary glass (soda glass) with a low softening point.
-ning≠7059 glass (manufactured by Corning Inc.), but it is also possible to use quartz glass or the like with a softening point of 1500° C. as the substrate. However, from a practical point of view, using t:i glass is inexpensive and allows thin film transistors (
This is advantageous in producing TPT).

Hereinafter, in order to explain the present invention in more detail, the process from the formation of a polycrystalline germanium thin film to the fabrication process of T F i' and the results of 'I' F T operation will be specifically explained using examples.

Example 1 In this practical example, a polycrystalline germanium thin film was formed on a substrate [-Ti1l FT was prepared from step 1] using an apparatus as shown in FIG. As the substrate 300
↓, Corning≠7059 glass was used.

First, after cleaning the substrate 300, f(F/HNO,/CH,
After lightly etching the surface with a mixed solution of C00i and drying, the substrate heating holder 30 was placed on the anode side in a Pelger vacuum deposition chamber (hereinafter referred to as Pelger) 301.
I installed it on 2. After that, the Pelger 301 is used with the diffusion pump 309 to reduce the background pressure I
Exhaust was carried out using a toma. 12. However, not only does the second force applied to this layer not only cause the reactive gases such as l, Ni and reactive gases to not contribute significantly to film deposition, but also cause oxygen and nitrogen to mix into the N1 gas, causing a change in the resistance of the film. Because it is heavy, there is no weight. Next, the substrate ttA Ilj', I? 3 to board 300f
7) Temperature was maintained at 400°C. Further, the substrate temperature 6 was monitored using a thermocouple 303.

The reactive gas introduced in this example) is 1 to 1 (
I Vopul'ne% (hereinafter 'Vow') with two gases
%) diluted in GcH, gas (denoted as Ge114
(written as 11/'-'2) and 1-1. .

1.00 voJumc ppln (7 v
Using L12H, gas (hereinafter written as 2H, (100)/■1□) diluted in
Gc)-(4(1)/H,) was purified using a mass flow controller 304 at 60 SCqM, and further J3,
1-4. (100) / L-12 is combined with a flow of 30 SCCM using a mass flow controller: 307, and the Pelger 30 is combined with a flow of 30 SCCM from the ring-shaped gas outlet 315.
1, adjust the main pulp 31 (), and use the absolute pressure gauge 312i to set the inside of the Pelger 301 to 0.0.
Set the pressure to Torr. After the pressure inside the bell jar 301 stabilizes, the cathode electrode 3131/C13,56
In addition to the high frequency f skin disturbance world 't 'IK 'it East 314, start the G '1-radiation 7E.The heavy pressure of this 11S ii O, 6KV, the current is 55mAl1F' ( )
Also adi.

The thickness of the film was 10.51 mm, and its uniformity was determined using a circular ring-shaped balloon [:].
) Xl 20 (+mn) was within ±10% of the substrate size. The t5L of hydrogen contained in the film formed at this time was Q:3at%.

Next, a TPT was fabricated as the entire film material according to the process shown schematically in FIG. 4. Elephant v shown in step (a)
After depositing the polycrystalline germanium thin film 401 on the glass substrate 300 as described above, it was heated with hydrogen gas.
(l Ovoe, diluted to ppm -301, adjust the pressure in -301 to O, l 2 Thrr and leave it to glow to make the phosphorous-doped n1 402 0, i), 5 I
(Step ())) ).

Next - [Cho (C) like photo-esophage f/gu mouth,
Layer 402'? ! -nce r; C, remove except for the region of the pole 403 and the region of the drain i and L4 region 404. Next, in order to form a gate insulating film, the upper 6 bases are again heated in the Pelger 301 according to the anode 1 rule.
The tiles were installed on 2. As in the case of producing polycrystalline germanium, the Pelger 301 is heated to the exhaust tongue 5 and the substrate temperature 'Ps.
NH3 mass flow control fly-305te20 SCCM with a purity of about 100 copies at f250℃
, J12 Tel Ovol, diluted to 96 5IF
(4 (hereinafter referred to as S+H4(10)/'-'2) are each controlled to 5 SCCM by the mass flow controller 308, formed into a thin film, and formed into a glow family'?t11.
A 5iNH film 405 is deposited to a thickness of 0.25 μm (step (d)).

Next, a photo-etching process is performed to form the bottom source electrode 403 and the drain 1 (contact hole 406 for the light frame 404).
-1,406-2 (step (e)), then 5i
M is vapor-deposited all over the NH film 405 to form an electrode film 407 (
After step (f) '), the electrode film 407 is processed by a photoetching process to form the extraction electrode 4 for the source electrode.
08, drain core electrode 409 and gate electrode 410 were formed (Step a(g)). After this, 1(2
Heat treatment was performed at 250° C. in an atmosphere.

TPT formed according to the following conditions and A-1 (channel length L - 20 μ, channel middle claw W = 650 tt
) showed stable and good properties.

TI'T's VD-ID was prototyped in this way.
An example of the characteristic curve is shown in Figure 7. As can be seen from FIG. 7, when VC = 10V, ID = 8 X to' A, when Vo = OV, JD = = 3 X iQ A, and the threshold voltage EE was 48V. Also, usually M O
S-'I"I" T device is used.

−V ear μeff value obtained from the straight line part of the curve 20
'r ti'''r having a high mobility of rJ/V-sec and good transistor characteristics capable of forming various drive circuits was obtained.

In order to investigate the stability of this T P T, I) C1 at the gate
Apply pressure of VG = 40V and change the mackerel, kei, and n by 50
At 0 hours 1, continuous measurements were made. That itf fruit I.

Most of the changes are within 10, lX? Ku,']'
Threshold value 111 before and after the change over time of li'''J': There was no change in pressure Δ~'TH, and the safety of TF''T was better than (J'' after 1st measurement). Ill FT characteristics VD-ID, ■G-■D) are also measured over time [) II and the measurement results are different from 14''', lt (2 [f is also 1206 ~
It was the same as I/V-ju.

As shown in this example, the TPT whose two main parts were made of a polycrystalline germanium thin film containing 0.3 at.% total hydrogen was found to be an extremely high-performance transistor. .

Example 2 By the same procedure as in Example 1, I't I="Paso 5
0W, QcH, (1)/l (2 flow rate 60 SCCM
, L32H, (i 00 )/FI2 flow idH30
A polycrystalline germanium film was formed on a Vycor glass substrate under SCCM and a pressure of 0.05 Torr.

The substrate temperature was set at every 50°C over a period of 200 to 700t, and the thickness was 05μ. And each multi-connection,! 7. Germa:
The amount of hydrogen in the nitrogen film was measured, and the amount of hydrogen in the film was determined.
Table 1 shows the artificial μcff of 'r r'r (sample If; ]-1-1-11) created by the same method as in Example 1 using -2 membrane.

iT; 1 From the table, hydrogen amount is 3at, % as shown by 1'1
If it exceeds ↓('j, 01 at, if it is less than %, μcff is 1.00+・a/ v-5cc or more -F
-C-S) '), L) (7) Changes over time and △V7 H
is relatively large and the stability of characteristics is also poor.

/ , /’ 7, / ,/ / / /'- /′ ,/ ,,,,/ / Example 3 Next, Example 3 will be explained in detail with reference to FIG.

First, Corning +705 prepared in the same manner as in Example 1
9 glass substrate 500 k 2 X 10-”Torri
The substrate holder 502 is mounted on a substrate holder 502 in a vacuum chamber 501 that can be depressurized by
After the pressure was reduced by 1° until the pressure reached ``Torr or less'', the substrate temperature was set to 400°C using the heater 503.Then, the electron gun 504 was operated at an accelerating voltage of 10KV, and the emitted electron beam was - The evaporator 505 is irradiated to evaporate the germanium evaporator 505, and the Knudsen cell 509 is further heated by the heater 511 to evaporate boron 5] and O from the Knudsen cell 509, and the shutters 512 and 507 are heated. A polycrystalline germanium film was formed by controlling with a quartz film thickness meter 506 so that a film thickness of 0.5μ was formed on the open substrate 500.The pressure during vapor deposition at this time was...
2 X 10'' Torr '% Deposition rate Rima 1.0
Person/S
/ sample wood" is designated as sample 3-1.

Next, a similarly prepared glass substrate 500 (Corning≠7059 glass substrate 500) was fixed in the plate holder 502, and the pressure inside the inner tank 501 was increased to 5×1O−” Tor.
Depressurize (~/koi &, high purity hydrogen gas (99,9999)) with variable leak valve 5
08, force is input into the vacuum chamber 501 by 17, and the pressure inside the chamber is increased to 5.
X l 0-7 Torr l (after that, base ui ir
y+ W k 4 (set at 10°C), germanium and boron were evaporated in the same way as in the case of preparing sample 3-1, and a film was formed.7o At that time, the film formation rate was 1.
0λ/ Become a warrior! 2 control, and a polycrystalline silicon film with a thickness of 0.05 μm was entirely formed. This completes the entire sample, which is designated as sample 3-2.

The water content contained in the polycrystalline germanium film for samples 3-1 and 3-2 was measured, and samples 7 and 6 were prepared in the same manner as in Example 1.
The results of measurements for each of T and changes in μcff sID over time, changes in threshold voltage and ΔVTH are shown in Table 2.

As can be seen from Table 2, the amount of water contained in the polycrystalline germanium thin film was 1. :'(-1 is 0.0
1 at...? In sample 3-2, -, 0.
Contains 5 at,%7. Tei g r 0, ko(7),,%, made, yJ, buko'l'I-' T
Effective gear movement Hifμeffiri sample 32 block λ
; Larger than sample 3-1, ) 14 lit Ill
Sample 3-2 is also better in terms of its properties, indicating that it is preferable to use it as a semiconductor layer for I'FT.

Table 2 Example 4 Next, referring to FIG. 3, an example in which a polycrystalline germanium thin film was formed by sputtering will be described in detail.

Real Thj f'd l and [Tsukasa I,): υko7%ft I+iif sa no L /3 2+
-= , / gu≠7059 glass base 4 shaku 300
i2 Bell, ;'X-: Upper anno-toy f in 301
ill (1) Add +l' to the board, tightly attached to the holder 302!
Fixed at -7 I2, -1, part card, box 8 of 13
1 on the 1st board, 2nd board facing - 1st square, polycrystalline aluminum desk (1 so 1 not 11.; pure 1!+-
99,9999r') i'lrz L *, O
H-force inside Pelger 301], X 1.0'Tor
Exhaust the air with a diffusion bomb 30s+ at
)＾・Heat the board heating boulder 302 to maintain the surface temperature of the substrate 3000 at Jl 00°Cvc. .

B, lI43(10(1)/Ht gas flow rate of 5 SCCM by mass controller 307,
1', switch it2 gas to mass flow controller 3
09E L is 5 Q Pelger 3 in the SCCM flow
Introducing the main valve 3 toraJ2 and setting the internal pressure of the Pelger 301 to 0.02 Torr.

After the internal pressure of the Pelger has stabilized, turn the cathode tortoise (3)
Apply a high frequency electric field of 13.56 1/2 to 13 by the power supply 314; a pressure of 2.5 KV], polycrystalline gel manila l on the two-quad electrode 313, the plate and the anode (substrate heating holder) 302 A glow discharge was generated in between, and p-type microcrystalline germanium was loaded on the glass substrate 30 (2). The thickness of the film formed at this time was 0.48 μm. Also, the amount of hydrogen formed at this time/, - Jl, contained in the polycrystalline germanium thin film is 1rJ', 1.2 at, %
De-da-da.

Using the obtained Jt sample, the same method as in Example 1 (Ci
Iteff 91 Schiff'CT F T (7) Iteff
iZJ: 65 crd/V'' SeC ■. Change over time is less than 0.1%, threshold voltage change △VTIl
TFT with stable OV and good transistor characteristics
Kai (1re/ko.

Implementation 1 Column 5 The present invention was carried out in the ion blasting deposition shown in No. 41.
A polycrystalline germanium thin film was fabricated using a device and a polycrystalline germanium thin film was fabricated using a polycrystalline germanium thin film.

First, polycrystalline germanium 7- is placed in a deposition chamber 6 ( ) 3 where pressure can be reduced.
germanium evaporator 6 ( ) 6 in boat 607 (
/C1 Straightness, Gorning≠7059 The glass substrate is attached to the support 611-1. Installed at 611-2, bank M '73.6
0:3 pressure total I x 10'', rOrr l
tc l (exhaust until ru-2, then gas, Q7 person pipe 60
5 pieces 110, 99.999% purity Ll, gas gold hydrogen fraction P1. is IXHI-''l'orr K'l-
Deposited in such a way that:
・Use one with 2 (m) holes at 1 interval.

Next, 13
A high frequency wave from a ship No. 56 was applied to give an output of 150 W, and a high frequency plasma wave was completely formed inside the high frequency coil 61 ().

Further, while rotating the supports J' and II bodies 611-1 and 611-2, the heating device 612 was put into operation and the glass substrate was heated to about 400 DEG C. for 7 J.

Next (Next, germanium evaporator 60G and electrogun 6
(2) Irradiated and heated from 8 and germanium particles Jinfeirin 1
I let it happen. In addition to this, the total thickness of the polycrystalline germanium film is Q, 5 μm, 5, this) 1. Using the same method as in Example 1, T and I"T were made using the same method as in Example 1 (Sample 5-
1). Also, the formation process of polycrystalline germanium thin film (/'C
Sample 5- from which a film was formed without adding hydrogen.
Fabricate TPT17 using the same method as 1 (Sample 5-2)
. μcr measured for each of the samples prepared in this way
Table 3 shows the VTR results for changes over time in fs''o and the amount of change in threshold voltage.

As shown in Table 3, sample 5-1 is sample 5-1. There was no change over time at all, and TTeff was 55.3, indicating excellent transistor characteristics.

Table 3

[Brief explanation of drawings]

FIG. 1 is a schematic explanatory diagram for explaining the entire structure of the semiconductor device of the present invention, and FIG. 2 is a schematic diagram showing a circuit for measuring the characteristics of the semiconductor device of the present invention. north 31sl
, Fig. 5, 71'', Fig. 6 (-1) Schematic explanatory diagram for explaining 60 examples of semi- and h-integral film manufacturing apparatuses according to the present invention, Fig. 4 jt1. ]!Create a y-body element.
A process diagram to schematically explain and clarify the EIF for Fv,
Figure 7+d Semi-7 of the present invention. Vn -In' of the 7-body element
It is an explanatory diagram showing an example of l':'# property. 101 - Substrate, 102... Thin film semi-4j body layer, 10
3. Source electrode, lO4.. Drain polarization, 105.
・Insulating layer, 106 ・Goot electrode, 1 (17, 1
08・[]Layer ib+i person Gyanon Co., Ltd. ID -30ν deather [A) 15 ・ / /'/' y,・″ / 〆10 Otsu'・ -1−−−−−−−−−−−− ---
--/, '・/ ,, / 1 05// //7.・−−−−−−−−−−−−−−−−−−−
−,−,−,,,,,,−,,,,,,,,−,−,−
,-,-,,-,,-,,-e,.

Claims (1)

[Claims] 1. A semiconductor device characterized in that a main part thereof is constituted by a polycrystalline germanium thin film semiconductor layer containing 3 atomic% hydrogen atoms.