JPS6446936A - Growth method of thin film - Google Patents

Growth method of thin film

Info

Publication number
JPS6446936A
JPS6446936A JP20390087A JP20390087A JPS6446936A JP S6446936 A JPS6446936 A JP S6446936A JP 20390087 A JP20390087 A JP 20390087A JP 20390087 A JP20390087 A JP 20390087A JP S6446936 A JPS6446936 A JP S6446936A
Authority
JP
Japan
Prior art keywords
thin film
reaction chamber
raw material
material gas
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20390087A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Awaya
Mutsunobu Arita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP20390087A priority Critical patent/JPS6446936A/en
Publication of JPS6446936A publication Critical patent/JPS6446936A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To realize the lowering of the temperature of a CVD (chemical vapor growth) reaction and the reduction of gas pressure, and to grow a thin film, which is hardly damaged, by executing pretreatment, in which excitation species are formed by glow discharge in a reaction chamber, before a raw material gas is introduced into the reaction chamber and a film is grown. CONSTITUTION:A gas generating glow discharge is introduced into a reaction chamber 1 before a thin film raw material gas is induced into the reaction chamber 1, and plasma pretreatment in which excitation species are shaped by glow discharge generated by applying high-frequency power from a high-frequency power RF to an electrode 6 in the reaction chamber 1 is executed. The thin film raw material gas is introduced into the reaction chamber 1, and chemical vapor growth is conducted at a temperature and pressure lower than the temperature and pressure of the thermal decomposition of the raw material gas, using active species on the surface of a sample 4 or in the vapor phase generated through plasma pretreatment as a catalyst. Accordingly, a thin film can be deposited in a low-temperature region in which the thin film is not deposited through normal thermal decomposition while the film, which is hardly damaged, can be formed.
JP20390087A 1987-08-17 1987-08-17 Growth method of thin film Pending JPS6446936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20390087A JPS6446936A (en) 1987-08-17 1987-08-17 Growth method of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20390087A JPS6446936A (en) 1987-08-17 1987-08-17 Growth method of thin film

Publications (1)

Publication Number Publication Date
JPS6446936A true JPS6446936A (en) 1989-02-21

Family

ID=16481572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20390087A Pending JPS6446936A (en) 1987-08-17 1987-08-17 Growth method of thin film

Country Status (1)

Country Link
JP (1) JPS6446936A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116833A (en) * 1989-09-29 1991-05-17 Shin Etsu Handotai Co Ltd Manufacture of semiconductor substrate
JPH0790589A (en) * 1993-09-24 1995-04-04 G T C:Kk Formation of silicon oxidized film
KR100275130B1 (en) * 1997-12-30 2001-01-15 김영환 Method for forming conductive line of polycide and apparatus for deposition of low temperature

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943575A (en) * 1982-09-02 1984-03-10 Canon Inc Semiconductor element
JPS6034013A (en) * 1983-08-04 1985-02-21 Agency Of Ind Science & Technol Manufacture of solid thin film
JPS60147113A (en) * 1984-01-11 1985-08-03 Canon Inc Manufacture of silicon film
JPS6249626A (en) * 1985-08-29 1987-03-04 Fuji Photo Film Co Ltd Semiconductor manufacturing equipment
JPS6269512A (en) * 1985-09-20 1987-03-30 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS62174382A (en) * 1986-01-27 1987-07-31 Shindengen Electric Mfg Co Ltd Method and apparatus for depositing metallic alloy from vapor phase

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943575A (en) * 1982-09-02 1984-03-10 Canon Inc Semiconductor element
JPS6034013A (en) * 1983-08-04 1985-02-21 Agency Of Ind Science & Technol Manufacture of solid thin film
JPS60147113A (en) * 1984-01-11 1985-08-03 Canon Inc Manufacture of silicon film
JPS6249626A (en) * 1985-08-29 1987-03-04 Fuji Photo Film Co Ltd Semiconductor manufacturing equipment
JPS6269512A (en) * 1985-09-20 1987-03-30 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS62174382A (en) * 1986-01-27 1987-07-31 Shindengen Electric Mfg Co Ltd Method and apparatus for depositing metallic alloy from vapor phase

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116833A (en) * 1989-09-29 1991-05-17 Shin Etsu Handotai Co Ltd Manufacture of semiconductor substrate
JPH0790589A (en) * 1993-09-24 1995-04-04 G T C:Kk Formation of silicon oxidized film
KR100275130B1 (en) * 1997-12-30 2001-01-15 김영환 Method for forming conductive line of polycide and apparatus for deposition of low temperature

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