JPS60147113A - Manufacture of silicon film - Google Patents

Abstract

PURPOSE:To manufacture the titled silicon film with excellent reproducibility by reducing the amount of intruded dust by a method wherein a highly adhesive silicon containing substance of the same composition as the film body is coated on the inner wall of the film forming chamber such as film-body forming bell jar and the like and a substrate holder and the surface of the component member such as various jigs of an opposing electrode and the like. CONSTITUTION:An anode electrode 2 and a cathode electrode 3 are provided facing each other in a chamber 1, and a holder 6 to be used to support a substrate 5 is fixed on the opposing surface 4 of the anode electrode 2 using a screw and the like. The inside of the cathode 3 is connected to a CVD raw gas introducing line 7, and a plurality of holes are provided on the surface 8 opposing to the substrate 5 for the purpose of blowing off gas on the substrate 5. Raw gas is introduced into the chamber 1 which is decompressed in advance using a pressure-reducing means, gas is sprayed on the substrate 5 which is heated up by a heater 9, power is applied to the cathode 3 from a power source 13, a glow discharge is generated between the cathode 3 and the earthed anode 2, and an a-Si film is formed on the substrate 5.

Description

[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for manufacturing a deposited film of silicon or a silicon-containing substance, and more specifically to a method for manufacturing a deposited film of silicon or a silicon-containing substance, and more specifically, a glow discharge decomposition method (plasma CvD), a sputtering (SP) method, an ion blating method. The present invention relates to a method for producing a deposited film of silicon or a silicon-containing substance by a photo-CVD method, a vacuum evaporation method, or the like.

[Prior art]

Plasma CVD and sp method, which have been widely used for a long time,
In manufacturing an amorphous silicon film by the original CVD method, the amorphous silicon film attached to the inner wall of the film forming chamber such as a Pelger and various jigs such as the substrate boulder and counter electrode is inside the amorphous silicon film itself. Due to stress and weak adhesion between the surface of the amorphous silicon and the above-mentioned jigs (generally made of SUS stainless steel), etc., 7-gassing occurs, and amorphous silicon powder floats inside the Pel jar.

Ru. This caused the inconvenience that the amorphous silicon film was not uniform because the amorphous silicon deposited on the substrate contained dust.

In order to prevent this, conventionally, the amorphous silicon powder generated in the air jar is vacuumed and cleaned, the substrate is set in the substrate holder, and the exhaust operation is also performed at low speed to remove the remaining amorphous silicon powder and the substrate set. It is common practice to avoid as much as possible the amorphous silicon powder that is generated during exhaust gas from flying up and adhering to the substrate.
Currently, it is not very effective against dust particles (particularly less than 5μ). It is also known that prior to forming an amorphous silicon film, a different material such as 81NH or 8i02 film is precipitated indoors to cover the initial jig in order to prevent the amorphous silicon film from chipping. However, by precipitating these dissimilar materials, the atmospheric pressure changes and influences the amorphous silicon film, making it impossible to produce an amorphous silicon film with stable and good properties. The downside is that there isn't one. Furthermore, it is effective to prevent peeling of the amorphous silicon film by using a load rotor device that does not leak the amorphous silicon film formation chamber to atmospheric pressure and leave it open, but this method has the disadvantage of high equipment cost. have.

[Purpose of the invention]

One object of the present invention is to provide a method for producing a deposited film of silicon or a silicon-containing substance with good reproducibility while reducing the amount of dust contained in the film.

Another object of the present invention is to improve the yield and uniformity of devices using silicon films by reducing dust in the films.

The above-mentioned object of the present invention is to form a film of silicon or a silicon-containing substance in advance when forming a film. This can be achieved by coating the film with silicon or a silicon-containing substance that has the same composition as the film body and has stronger adhesion.

[Embodiments of the invention]

The present invention's silicon film manufacturing method, glow discharge decomposition method (
Deposited films of silicon or silicon-containing substances, i.e., single-crystal, polycrystalline, or amorphous silicon films, by plasma CVD (Sp) method, ion blating method, original CVD method, vacuum evaporation method, etc. Alternatively, it is suitable as a method for manufacturing silicon semiconductor films such as hydrogenation, .--logonization, carbon-containing, nitrogen-containing, or oxygen-containing silicon films, and is especially suitable as a method for manufacturing silicon films using a patch structure device in which the film formation chamber is exposed to the atmosphere. There is.

In the method of the present invention, the step of pre-coating the surface of the chamber component generally involves increasing the decomposition energy of the starting material for depositing silicon or a silicon-containing material, so that the decomposition energy of the starting material for depositing silicon or a silicon-containing material is higher than that for forming a film on the substrate. This is done by increasing the rate of precipitation of the film, thereby forming a coating on the surface of the chamber-constituting member that has the same composition as the film formed on the substrate and has stronger adhesion than the film formed on the substrate.

In order to increase the decomposition energy of the starting material, for example, in the plasma CVD + SP method using plasma, it is effective to increase the power of the applied direct current or radio frequency (RF), and in the photoCVD method, it is effective to increase the amount of irradiated light. produces the same effect. In the ion blating method, RF
Increasing the strength of the Til force and electric field is done.

An embodiment in which a hydrogenated amorphous silicon film (hereinafter referred to as an a-8i film) is manufactured by plasma CVD will be described below, but the embodiments of the present invention are not limited thereto.

FIG. 1 is a schematic diagram showing an example of the configuration of a batch type plasma CVD apparatus used to carry out the method of the present invention. and the cathode electrode 3 face each other at an interval of 50+m, and a holder 6 for holding the base 5 is fixed on the opposing surface 4 of the anode electrode 2 with screws or the like. The inside of the cathode electrode 3 is connected to an introduction line 7 for CVD source gas (for example, a mixed gas of silane, hydrogen, and argon whose main component is 7 run gas). A plurality of ports are provided on the opposing surface 8 of the cathode electrode 3 for blowing out the source gas introduced into the electrode toward the base 5 as indicated by arrows in the figure. 9 is a heater provided in the anode electrode for heating the substrate 5; 10 is an exhaust port for exhausting the inside of the chamber, and is connected to an appropriate pressure reducing means (for example, a vacuum pump). Reference numeral 11 is an anti-adhesion plate for preventing the starting materials from accumulating elsewhere in the Pelger.

12 is leak pulp, 13 is RF power (
For example, it is a power supply for inputting 13.56 MHz).

A source gas is introduced into the chamber af-i, which has been previously depressurized by a decompression means, and the substrate 5 is heated by a heater 9.
At the same time, an a-St film is formed on the substrate 5 by inputting power to the cathode 3 from the power source 13 to generate glow discharge between it and the grounded anode 2. I can do it.

The remaining raw material gas is exhausted through the exhaust port 10.

In this apparatus, in order to carry out the method of the present invention, when forming the a-81 film on the substrate 5, it is necessary to prepare the substrate 5 in advance.
Introduce the same raw material gas with the power supply 13 removed.
Glow discharge is performed using a higher electric power than when forming the a-8i film on the substrate to coat the surfaces of various jigs such as the inner wall of the chaper/par, adhesion prevention plate, anode, and cathode.

The discharge/warming is preferably at least twice as high, more preferably at least five times as high as when manufacturing the A-81 film on the substrate. At this time, it is also more preferable to simultaneously bake the chamber and the like, which further enhances the effect by raising the temperature of the substrate holder higher than that during normal A-81 manufacturing. In addition, the thickness of the high/4' war A-81 film coating is 0.1μ or more, and more preferably 0.2μ.
μ or more is preferable. Hereinafter, a more detailed explanation will be given by showing specific examples.

(Conventional example) The plasma CVD apparatus shown in Fig. 1 was disassembled, and the adhering films on stainless steel parts such as the chamber 1, anode 2, cathode 3, substrate holder 6, and anti-adhesion plate 11 were removed using bead gellast. After dropping, it was thoroughly washed with solvent (triclene and amethane) and pure water, and then assembled after drying by heating at 110°C.

After sufficient baking, @-81 film was manufactured under the following conditions. Set the glass substrate 5 (Corninger 7059) in the substrate holder 6, evacuate the air using an oil diffusion pump, and set the inside of the Pelger to 1.5 x 1O-6 Torr i.
I pulled a vacuum. The substrate temperature was maintained at 200°C, and silane gas (manufactured by Komatsu Electronics Co., Ltd., 99.96%) was passed through the gas introduction line 7 at a rate of 50 SCCM (50 cc/rim).
+ 1 stm) and the internal pressure is 0. I Torr
Then, deposition was carried out for 4 hours using RF/#warmer 5W (anode and cathode electrodes of 200 mφ) to form an a-8i film with a thickness of 1.0 μm. After waiting for the substrate temperature to drop to 100° C., atmospheric pressure was leaked from inside the Pelger, and the substrate was taken out.

The surface of the thus obtained a-8i film was observed using an optical microscope, and the number of particles of 1 μm or more contained in the @-S l mixture was counted to calculate the average number per 102 particles.

Manufacturing was repeated using this A-81 membrane manufacturing process (during which time the inside of the Pelger was vacuumed and cleaned under the same conditions). Figure 2, song 1t1■, shows the relationship between the number of a-8lam formation (precipitation) and the average number of 32 pieces of dust of 1 μm or more. As shown in this curve, the noise increases and #1 becomes saturated from the 20th time onwards. Depending on this manufacturing method, the number increases to several dozen pieces/α2 after the fifth time, which is not preferable.

(Example-1) After carrying out the disassembly and cleaning process in the same manner as in the conventional example, without setting the glass substrate 5, the substrate temperature was kept at 250°C, 50800 M of silane gas was flowed in, and the internal pressure was set to Q and R at 1 Torr.
F power of 100 W was applied and precipitation was carried out for 10 minutes. The thickness of the precipitated film is approximately 0.3μ. After that, the a-8i film manufacturing solution was replaced on the glass substrate 5 in the same manner as in the conventional example. 1μ of each a-8i film thus obtained
The number of dust particles larger than m increases as shown by curve ■ in Figure 2, and as is clear compared to the conventional example (curve ■),
The amount of garbage inside has been drastically reduced. <Even after 30 repetitions, the condition remains below 32/32.

(Example-2) After repeating the manufacturing of m-5t for the 10th time in the same manner as in Example-1, B-8 was manufactured again for 10 minutes with RF power of 100W.
The indoor coating process according to No. 1 was carried out, and then an a-St film was repeatedly produced on the substrate from the 11th time until the 20th time). When recombining every 10 times, a
The change in the number of dust particles during -8ig is shown in curve 2 in Figure 2.

By performing the coating process repeatedly or periodically, the number of dust particles is reduced compared to when the a-8i film is deposited using high RF power only in the initial stage.

[Brief explanation of drawings]

Figure 1 shows the plasma C used to carry out the method of the present invention.
FIG. 2 is a schematic diagram showing a configuration example of a VD device, and a curve diagram showing the degree of reduction in the number of dust contained in a silicon film manufactured by the method of the present invention in comparison with a conventional example. 1... Chamber, 2... Anode electrode, 3...
cathode electrode, 5...substrate, 6...substrate holder,
7...Introduction line, 10...Exhaust port, 13...R
F power supply. ill diagram

Claims (5)

[Claims] (1) When forming a film body made of silicon or a silicon-containing substance on a substrate in a reduced pressure chamber, the surfaces of the chamber constituent members excluding the base body are prepared in advance to have the same composition as the film body and to have a higher adhesion strength than that of the film body. 1. A method for producing a silicon film, which comprises coating the silicon film with strong silicon or a silicon-containing substance. (2) A method for producing a silicon 11 shell according to claim (1), in which the surface of the chamber-constituting member is coated by increasing the decomposition energy of the starting material compared to when forming a film on the substrate. . (3) A method for producing a silicon film according to claim (1), wherein the surface of the chamber component is coated by increasing the rate of silicon deposition compared to when forming a film body on a substrate. (4) The coating of the surface of the chamber-constituting member is carried out by increasing the temperature of the coated surface compared to the temperature of the substrate when forming the film on the substrate, as described in claim (1). A method for manufacturing a silicon film. (5) A patent claim in which the membrane and coating are formed by a method using plasma, and the coating on the surface of the chamber component is performed using DC or RF energy that is higher than that used when forming the membrane on the base body. A method for manufacturing a silicon film according to item (1).