JPS56140021A - Manufacture of silicon carbide thin film - Google Patents

Manufacture of silicon carbide thin film

Info

Publication number
JPS56140021A
JPS56140021A JP4264680A JP4264680A JPS56140021A JP S56140021 A JPS56140021 A JP S56140021A JP 4264680 A JP4264680 A JP 4264680A JP 4264680 A JP4264680 A JP 4264680A JP S56140021 A JPS56140021 A JP S56140021A
Authority
JP
Japan
Prior art keywords
substrate
silicon carbide
gaseous
reactor
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4264680A
Other languages
Japanese (ja)
Inventor
Shungo Tsuboi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4264680A priority Critical patent/JPS56140021A/en
Publication of JPS56140021A publication Critical patent/JPS56140021A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a silicon carbide thin film of high hardness at a low temp. of a substrate by a plasma CVD method by using a gaseous SiH4-CH4-Ar mixture with partial pressure of gaseous methane adjusted to 5-20 to 1 partial pressure of gaseous silane. CONSTITUTION:Substrate 3 is mounted on holder 2 in reactor 1, and reactor 1 is evacuated well with exhaust system 4. After heating substrate 3 to about 300- 400 deg.C with heater 5, Ar is introduced from gas feeder 6, and about 200W high frequency power is applied to electrode 9 from high frequency power source 7 through matching box 8 to clean the surface of substrate 3 at about 1-2 Torr vacuum degree. A gaseous SiH4-CH4-Ar mixture is then introduced into reactor 1 to generate plasma at about 1-2 Torr vacuum degree and about 100W high frequency power, and silicon carbide is deposited on the surface of the substrate 3.
JP4264680A 1980-03-31 1980-03-31 Manufacture of silicon carbide thin film Pending JPS56140021A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4264680A JPS56140021A (en) 1980-03-31 1980-03-31 Manufacture of silicon carbide thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4264680A JPS56140021A (en) 1980-03-31 1980-03-31 Manufacture of silicon carbide thin film

Publications (1)

Publication Number Publication Date
JPS56140021A true JPS56140021A (en) 1981-11-02

Family

ID=12641769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4264680A Pending JPS56140021A (en) 1980-03-31 1980-03-31 Manufacture of silicon carbide thin film

Country Status (1)

Country Link
JP (1) JPS56140021A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145992A (en) * 1983-12-29 1985-08-01 Sharp Corp Preparation of silicon carbide single crystal base
CN111074342A (en) * 2019-12-27 2020-04-28 季华实验室 Method for preparing carrier disc coating by utilizing silicon carbide epitaxial growth equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145992A (en) * 1983-12-29 1985-08-01 Sharp Corp Preparation of silicon carbide single crystal base
JPH0138080B2 (en) * 1983-12-29 1989-08-10 Sharp Kk
CN111074342A (en) * 2019-12-27 2020-04-28 季华实验室 Method for preparing carrier disc coating by utilizing silicon carbide epitaxial growth equipment
CN111074342B (en) * 2019-12-27 2021-11-09 季华实验室 Method for preparing carrier disc coating by utilizing silicon carbide epitaxial growth equipment

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