JPS5778546A - Production of photoconductive silicon layer - Google Patents
Production of photoconductive silicon layerInfo
- Publication number
- JPS5778546A JPS5778546A JP55154641A JP15464180A JPS5778546A JP S5778546 A JPS5778546 A JP S5778546A JP 55154641 A JP55154641 A JP 55154641A JP 15464180 A JP15464180 A JP 15464180A JP S5778546 A JPS5778546 A JP S5778546A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electric power
- chamber
- sih4
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To obtain a silicon layer of high resistivity suited for an electrophotographic receptor by performing decomposition of a gaseous silicon compound by high frequency glow discharge by means of specific electric power densities and gas flow rates. CONSTITUTION:In a plasma CVD device, a sample 3 is heated to, for example, 200 deg.C with a heater 4, and is next decompressed down to 0.1 Pa (Pascal). Mixed gases of 10% SiH4 and 90% H2 are introduced into a chamber 1 at >=0.01mm.<-1> flow rates in ratio of total gas flow rate/chamber volume. When the flow rate and the degree of vacuum attains set values and stabilize, an RF electric power source is turned on. The RF electric power is set at >=0.3W/cm<2> with respect to the surface area (plasma generating side) of an electrode 2. Glow discharge takes place in the chamber and the decomposition of SiH4 initiates. When amorphous silicon is formed to prescribed thickness of the sample, the power source is switched off and the sample is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55154641A JPS5778546A (en) | 1980-11-05 | 1980-11-05 | Production of photoconductive silicon layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55154641A JPS5778546A (en) | 1980-11-05 | 1980-11-05 | Production of photoconductive silicon layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5778546A true JPS5778546A (en) | 1982-05-17 |
JPS6237111B2 JPS6237111B2 (en) | 1987-08-11 |
Family
ID=15588648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55154641A Granted JPS5778546A (en) | 1980-11-05 | 1980-11-05 | Production of photoconductive silicon layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5778546A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59127647A (en) * | 1983-01-11 | 1984-07-23 | Mitsui Toatsu Chem Inc | Preparation of amorphous membrane |
JPS59179151A (en) * | 1983-03-30 | 1984-10-11 | Mitsui Toatsu Chem Inc | Production of amorphous thin film |
DE3427826A1 (en) * | 1983-07-27 | 1985-02-14 | Stanley Electric Co. Ltd., Tokio/Tokyo | SUBSTRATE FOR A PHOTO RECEPTOR MADE OF AMORPHIC SILICON |
JPS6163022A (en) * | 1984-09-04 | 1986-04-01 | Ricoh Co Ltd | Manufacture of amorphous semiconductor thin film |
JPH01125530U (en) * | 1988-05-12 | 1989-08-28 | ||
JPH0273978A (en) * | 1988-09-08 | 1990-03-13 | Sumitomo Electric Ind Ltd | Formation of thin film |
JPH02267272A (en) * | 1989-04-06 | 1990-11-01 | Sumitomo Electric Ind Ltd | Thin film forming device |
JPH02267273A (en) * | 1989-04-06 | 1990-11-01 | Sumitomo Electric Ind Ltd | Formation of thin film |
-
1980
- 1980-11-05 JP JP55154641A patent/JPS5778546A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59127647A (en) * | 1983-01-11 | 1984-07-23 | Mitsui Toatsu Chem Inc | Preparation of amorphous membrane |
JPS59179151A (en) * | 1983-03-30 | 1984-10-11 | Mitsui Toatsu Chem Inc | Production of amorphous thin film |
DE3427826A1 (en) * | 1983-07-27 | 1985-02-14 | Stanley Electric Co. Ltd., Tokio/Tokyo | SUBSTRATE FOR A PHOTO RECEPTOR MADE OF AMORPHIC SILICON |
JPS6163022A (en) * | 1984-09-04 | 1986-04-01 | Ricoh Co Ltd | Manufacture of amorphous semiconductor thin film |
JPH01125530U (en) * | 1988-05-12 | 1989-08-28 | ||
JPH0351971Y2 (en) * | 1988-05-12 | 1991-11-08 | ||
JPH0273978A (en) * | 1988-09-08 | 1990-03-13 | Sumitomo Electric Ind Ltd | Formation of thin film |
JPH02267272A (en) * | 1989-04-06 | 1990-11-01 | Sumitomo Electric Ind Ltd | Thin film forming device |
JPH02267273A (en) * | 1989-04-06 | 1990-11-01 | Sumitomo Electric Ind Ltd | Formation of thin film |
Also Published As
Publication number | Publication date |
---|---|
JPS6237111B2 (en) | 1987-08-11 |
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