JPS57192258A - Film forming apparatus using glow discharge - Google Patents

Film forming apparatus using glow discharge

Info

Publication number
JPS57192258A
JPS57192258A JP7419681A JP7419681A JPS57192258A JP S57192258 A JPS57192258 A JP S57192258A JP 7419681 A JP7419681 A JP 7419681A JP 7419681 A JP7419681 A JP 7419681A JP S57192258 A JPS57192258 A JP S57192258A
Authority
JP
Japan
Prior art keywords
base plate
gas
rotated
glow discharge
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7419681A
Other languages
Japanese (ja)
Other versions
JPS616151B2 (en
Inventor
Satoru Nishikawa
Akira Uchiyama
Masahiro Akiyama
Katsuzo Uenishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7419681A priority Critical patent/JPS57192258A/en
Publication of JPS57192258A publication Critical patent/JPS57192258A/en
Publication of JPS616151B2 publication Critical patent/JPS616151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a uniform film, by letting a gas flow between an electrically conductive cylindrical base plate and a cylindrical outer electrode positioned coaxially with said base plate and outside thereof with the direction of the gas stream normal to the axis of said plate, and effecting glow discharge with said base plate being rotated. CONSTITUTION:The inside of a reaction chamber 206 is evecuated by a vacuum pump 213 approximately to 10<-3>-10<-6> torr, and a raw gas, SiH4, from a gas cylinder is allowed to pass via a gas flow rate controller 203 into said reaction chamber 206. The raw gas flows through a plurality of gas introducing inlets 205 positioned along the axis of the cylindrical outer electrode 207 toward gas outlets 210 normally to the axis. On the other hand, the electrically conductive cylindrical base plate 208 is heated by heaters 209 to 150-350 deg.C while it is being rotated, and it receives a high frequency electric power from a high frequency electric source 211 so that an Si film is formed by glow discharge on the base plate 208. Alternatively, the base plate 208 may be at rest while the outer electrode 207 may be rotated, or a flat plate is placed on the electrically conductive cylindrical base plate 208 that is being rotated, and an Si film may be formed on the flat plate.
JP7419681A 1981-05-19 1981-05-19 Film forming apparatus using glow discharge Granted JPS57192258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7419681A JPS57192258A (en) 1981-05-19 1981-05-19 Film forming apparatus using glow discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7419681A JPS57192258A (en) 1981-05-19 1981-05-19 Film forming apparatus using glow discharge

Publications (2)

Publication Number Publication Date
JPS57192258A true JPS57192258A (en) 1982-11-26
JPS616151B2 JPS616151B2 (en) 1986-02-24

Family

ID=13540180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7419681A Granted JPS57192258A (en) 1981-05-19 1981-05-19 Film forming apparatus using glow discharge

Country Status (1)

Country Link
JP (1) JPS57192258A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217615A (en) * 1983-05-23 1984-12-07 Toshiba Corp Apparatus for forming amorphous silicon film
JPS609876A (en) * 1983-06-29 1985-01-18 Matsushita Electric Ind Co Ltd Device for producing thin film
JPS6086276A (en) * 1983-10-17 1985-05-15 Canon Inc Formation of deposited film by discharge
JPS6126780A (en) * 1984-07-17 1986-02-06 Stanley Electric Co Ltd Plasma cvd apparatus
JPH07261437A (en) * 1995-01-24 1995-10-13 Canon Inc Formation of deposited film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08138559A (en) 1994-11-11 1996-05-31 Hitachi Ltd Plasma display device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217615A (en) * 1983-05-23 1984-12-07 Toshiba Corp Apparatus for forming amorphous silicon film
JPH0520502B2 (en) * 1983-05-23 1993-03-19 Tokyo Shibaura Electric Co
JPS609876A (en) * 1983-06-29 1985-01-18 Matsushita Electric Ind Co Ltd Device for producing thin film
JPS6086276A (en) * 1983-10-17 1985-05-15 Canon Inc Formation of deposited film by discharge
JPS6153432B2 (en) * 1983-10-17 1986-11-18 Canon Kk
JPS6126780A (en) * 1984-07-17 1986-02-06 Stanley Electric Co Ltd Plasma cvd apparatus
JPH07261437A (en) * 1995-01-24 1995-10-13 Canon Inc Formation of deposited film
JP2719502B2 (en) * 1995-01-24 1998-02-25 キヤノン株式会社 Method of manufacturing electrophotographic light-receiving member

Also Published As

Publication number Publication date
JPS616151B2 (en) 1986-02-24

Similar Documents

Publication Publication Date Title
EP0074212B1 (en) Apparatus for forming thin film
US4349582A (en) Gas-discharge method for coating the interior of electrically non-conductive pipes
KR970018188A (en) Plasma processing apparatus for dry etching of semiconductor wafers
JPS57192258A (en) Film forming apparatus using glow discharge
GB1034509A (en) Ozone manufacture by discharge in apparatus comprising a coaxial dielectric tube between an inner and an outer metal tube
US4909183A (en) Apparatus for plasma CVD
JPS5778546A (en) Production of photoconductive silicon layer
JPS6117151A (en) Plasma cvd device
EP0115378A3 (en) Manufacturing process for selenium photoreceptors
JPS5562160A (en) Forming method for film by glow discharge
DE3164783D1 (en) Process and tubular reactor for vapour-phase deposition and for plasma etching
JPS57113214A (en) Manufacture of amorphous semiconductor film
JPS60128612A (en) Plasma cvd apparatus
CN113365404B (en) Dielectric barrier discharge plasma auxiliary coal combustion generating device
SU810054A1 (en) Apparatus for plasma treatment of pulverulent materials
JPS5732637A (en) Dry etching apparatus
JPS57186320A (en) Forming method for amorphous silicon layer
KR950004756Y1 (en) Plasma generating apparatus
JPS5663821A (en) Manufacture of zinc oxide film
JPS648274A (en) Glow discharge decomposition device
JPS57191218A (en) Equipment for forming amorphous silicon
JPS5472534A (en) High frequency heating device
SU1697880A1 (en) Method and apparatus for dispersing of materials
JP2920637B2 (en) Glow discharge decomposition equipment
JPS5523085A (en) Production of silicon film