JPS5665142A - Manufacture of electrophotographic receptor - Google Patents

Manufacture of electrophotographic receptor

Info

Publication number
JPS5665142A
JPS5665142A JP14162479A JP14162479A JPS5665142A JP S5665142 A JPS5665142 A JP S5665142A JP 14162479 A JP14162479 A JP 14162479A JP 14162479 A JP14162479 A JP 14162479A JP S5665142 A JPS5665142 A JP S5665142A
Authority
JP
Japan
Prior art keywords
carbon
silicon
electrically conductive
silane
material based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14162479A
Other languages
Japanese (ja)
Other versions
JPS6161384B2 (en
Inventor
Akio Azuma
Kazuhiro Kawajiri
Yuzo Mizobuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP14162479A priority Critical patent/JPS5665142A/en
Priority to US06/202,201 priority patent/US4361638A/en
Priority to DE19803040972 priority patent/DE3040972A1/en
Publication of JPS5665142A publication Critical patent/JPS5665142A/en
Publication of JPS6161384B2 publication Critical patent/JPS6161384B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain high dark specific resistance and high photoconductivity by using an amorphous material based on carbon and silicon.
CONSTITUTION: Predetermined gases are introduced into a vacuum chamber system to generate discharge phenomenon, and the introduced gases are decomposed with the discharge energy. By this glow discharge decomposition silane or a silane deriv. is reacted with a gas contg. carbon and fluorine such as CF4 gas to form photoconductive layer 204 made of amorphous material based on carbon and silicon. Electrically conductive support 201 is composed of support 202 and electrically conductive layer 203.
COPYRIGHT: (C)1981,JPO&Japio
JP14162479A 1979-10-30 1979-11-01 Manufacture of electrophotographic receptor Granted JPS5665142A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP14162479A JPS5665142A (en) 1979-11-01 1979-11-01 Manufacture of electrophotographic receptor
US06/202,201 US4361638A (en) 1979-10-30 1980-10-30 Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same
DE19803040972 DE3040972A1 (en) 1979-10-30 1980-10-30 ELECTROPHOTOGRAPHIC LIGHT SENSITIVE MATERIAL AND METHOD FOR THE PRODUCTION THEREOF

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14162479A JPS5665142A (en) 1979-11-01 1979-11-01 Manufacture of electrophotographic receptor

Publications (2)

Publication Number Publication Date
JPS5665142A true JPS5665142A (en) 1981-06-02
JPS6161384B2 JPS6161384B2 (en) 1986-12-25

Family

ID=15296359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14162479A Granted JPS5665142A (en) 1979-10-30 1979-11-01 Manufacture of electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5665142A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593018A (en) * 1982-06-25 1984-01-09 Hitachi Ltd Manufacture of silicon-base film by plasma deposition
JPS5986053A (en) * 1982-11-09 1984-05-18 Seiko Epson Corp Photosensitive drum
JPS59127647A (en) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc Preparation of amorphous membrane
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
JPS61201257A (en) * 1985-03-04 1986-09-05 Matsushita Electric Ind Co Ltd Photoconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325366A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Plasma treating method and apparat us

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5325366A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Plasma treating method and apparat us

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593018A (en) * 1982-06-25 1984-01-09 Hitachi Ltd Manufacture of silicon-base film by plasma deposition
JPS5986053A (en) * 1982-11-09 1984-05-18 Seiko Epson Corp Photosensitive drum
JPS59127647A (en) * 1983-01-11 1984-07-23 Mitsui Toatsu Chem Inc Preparation of amorphous membrane
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
JPS61201257A (en) * 1985-03-04 1986-09-05 Matsushita Electric Ind Co Ltd Photoconductor

Also Published As

Publication number Publication date
JPS6161384B2 (en) 1986-12-25

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