JPS57158650A - Amorphous silicon photoconductor layer - Google Patents

Amorphous silicon photoconductor layer

Info

Publication number
JPS57158650A
JPS57158650A JP56044499A JP4449981A JPS57158650A JP S57158650 A JPS57158650 A JP S57158650A JP 56044499 A JP56044499 A JP 56044499A JP 4449981 A JP4449981 A JP 4449981A JP S57158650 A JPS57158650 A JP S57158650A
Authority
JP
Japan
Prior art keywords
amorphous silicon
hydrogen
layer
photoconductor layer
photoconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56044499A
Other languages
Japanese (ja)
Inventor
Takao Kawamura
Masazumi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyoto Ceramic Co Ltd
Kyocera Corp
Minolta Co Ltd
Original Assignee
Kyoto Ceramic Co Ltd
Kyocera Corp
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyoto Ceramic Co Ltd, Kyocera Corp, Minolta Co Ltd filed Critical Kyoto Ceramic Co Ltd
Priority to JP56044499A priority Critical patent/JPS57158650A/en
Priority to US06/355,377 priority patent/US4409311A/en
Priority to DE19823211081 priority patent/DE3211081A1/en
Publication of JPS57158650A publication Critical patent/JPS57158650A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain a photoconductor layer for use in an electrophotographic receptor enhanced in sensitivity and dark resistance, by adding a specified amount of hydrogen to an amorphous silicon layer, and regulating the absorption coefficient ratio of the absorption peaks in specified infrared absorption spectra. CONSTITUTION:A glow discharge decomposition device or the like, hydrogen as a carrier gas, and 0.3-3KW high frequency power are used, and gaseous SiH4, when needed, oxygen, and gaseous impurities of the group IIIA are decomposed to form an amorphous silicon (a-Si) photoconductor layer containing at least 10- 40 atomic % hydrogen, when needed, a slight amount of oxygen, and the impurities of the group IIIA on a substrate. This a-Si layer has the 0.2-1.7 absorption coefficient ratio of the peaks at 2,100-1 and 2,000cm<-1> of infrared absorption spectra, thus permitting an electrophotographic photoconductor enhanced in sensitivity, dark resistance, manufacture reproducibility, and stability to be obtained.
JP56044499A 1981-03-25 1981-03-25 Amorphous silicon photoconductor layer Pending JPS57158650A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56044499A JPS57158650A (en) 1981-03-25 1981-03-25 Amorphous silicon photoconductor layer
US06/355,377 US4409311A (en) 1981-03-25 1982-03-08 Photosensitive member
DE19823211081 DE3211081A1 (en) 1981-03-25 1982-03-25 LIGHT SENSITIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56044499A JPS57158650A (en) 1981-03-25 1981-03-25 Amorphous silicon photoconductor layer

Publications (1)

Publication Number Publication Date
JPS57158650A true JPS57158650A (en) 1982-09-30

Family

ID=12693239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56044499A Pending JPS57158650A (en) 1981-03-25 1981-03-25 Amorphous silicon photoconductor layer

Country Status (1)

Country Link
JP (1) JPS57158650A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232909A (en) * 1983-05-16 1984-12-27 Oki Electric Ind Co Ltd Manufacture of thin amorphous silicon film
JPH01277245A (en) * 1988-04-28 1989-11-07 Sharp Corp Electrophotographic sensitive body
US4971878A (en) * 1988-04-04 1990-11-20 Sharp Kabushiki Kaisha Amorphous silicon photosensitive member for use in electrophotography
EP0718723A2 (en) 1994-12-07 1996-06-26 Canon Kabushiki Kaisha Electrophotographing apparatus
US5732313A (en) * 1995-07-31 1998-03-24 Canon Kabushiki Kaisha Charge apparatus and image forming apparatus
US5738963A (en) * 1995-08-23 1998-04-14 Canon Kabushiki Kaisha Light-receiving member for electrophotography having a photoconductive layer composed of a first layer region and a second layer region having different energy bandgaps and characteristic energies
US5797072A (en) * 1995-08-21 1998-08-18 Canon Kabushiki Kaisha Apparatus and method for contact charging an amorphous silicon photoconductor via a mulipolar magnetic body having a magnetic brush layer
EP0987576A2 (en) * 1998-09-17 2000-03-22 Canon Kabushiki Kaisha Electrophotographic apparatus and electrophotographic method
US6240269B1 (en) 1998-05-06 2001-05-29 Canon Kabushiki Kaisha Image forming apparatus having a photosensitive member of amorphous silicon base and system for exposing and charging the photosensitive member
US6272301B1 (en) 1998-09-22 2001-08-07 Canon Kabushiki Kaisha Image forming apparatus featuring a rotatable electroconductive foam member
US6285385B1 (en) 1998-12-25 2001-09-04 Canon Kabushiki Kaisha Electrophotographic method and apparatus which employs light beam irradiation to form an electrostatic image on a surface of a photosensitive member
US6537714B2 (en) 2000-07-07 2003-03-25 Canon Kabushiki Kaisha Image-forming method and image-forming apparatus
US6605405B2 (en) 2000-07-26 2003-08-12 Canon Kabushiki Kaisha Electrophotographic method and electrophotographic apparatus

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147224B2 (en) * 1983-05-16 1986-10-17 Oki Electric Ind Co Ltd
JPS59232909A (en) * 1983-05-16 1984-12-27 Oki Electric Ind Co Ltd Manufacture of thin amorphous silicon film
US4971878A (en) * 1988-04-04 1990-11-20 Sharp Kabushiki Kaisha Amorphous silicon photosensitive member for use in electrophotography
JPH01277245A (en) * 1988-04-28 1989-11-07 Sharp Corp Electrophotographic sensitive body
EP0718723A2 (en) 1994-12-07 1996-06-26 Canon Kabushiki Kaisha Electrophotographing apparatus
US5732313A (en) * 1995-07-31 1998-03-24 Canon Kabushiki Kaisha Charge apparatus and image forming apparatus
US5797072A (en) * 1995-08-21 1998-08-18 Canon Kabushiki Kaisha Apparatus and method for contact charging an amorphous silicon photoconductor via a mulipolar magnetic body having a magnetic brush layer
US5738963A (en) * 1995-08-23 1998-04-14 Canon Kabushiki Kaisha Light-receiving member for electrophotography having a photoconductive layer composed of a first layer region and a second layer region having different energy bandgaps and characteristic energies
US6240269B1 (en) 1998-05-06 2001-05-29 Canon Kabushiki Kaisha Image forming apparatus having a photosensitive member of amorphous silicon base and system for exposing and charging the photosensitive member
EP0987576A2 (en) * 1998-09-17 2000-03-22 Canon Kabushiki Kaisha Electrophotographic apparatus and electrophotographic method
EP0987576A3 (en) * 1998-09-17 2001-01-17 Canon Kabushiki Kaisha Electrophotographic apparatus and electrophotographic method
US6556233B2 (en) 1998-09-17 2003-04-29 Canon Kabushiki Kaisha Electrophotographic apparatus and electrophotographic method featuring a photosensitive member having a linear EV characteristic
US6272301B1 (en) 1998-09-22 2001-08-07 Canon Kabushiki Kaisha Image forming apparatus featuring a rotatable electroconductive foam member
US6285385B1 (en) 1998-12-25 2001-09-04 Canon Kabushiki Kaisha Electrophotographic method and apparatus which employs light beam irradiation to form an electrostatic image on a surface of a photosensitive member
US6537714B2 (en) 2000-07-07 2003-03-25 Canon Kabushiki Kaisha Image-forming method and image-forming apparatus
US6605405B2 (en) 2000-07-26 2003-08-12 Canon Kabushiki Kaisha Electrophotographic method and electrophotographic apparatus

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