JPS54145539A - Electrophotographic image forming material - Google Patents

Electrophotographic image forming material

Info

Publication number
JPS54145539A
JPS54145539A JP5360578A JP5360578A JPS54145539A JP S54145539 A JPS54145539 A JP S54145539A JP 5360578 A JP5360578 A JP 5360578A JP 5360578 A JP5360578 A JP 5360578A JP S54145539 A JPS54145539 A JP S54145539A
Authority
JP
Japan
Prior art keywords
semiconductor
image forming
gas
electrophotographic image
mole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5360578A
Other languages
Japanese (ja)
Other versions
JPS6226458B2 (en
Inventor
Tadaharu Fukuda
Yutaka Hirai
Toshiyuki Komatsu
Katsumi Nakagawa
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP53053605A priority Critical patent/JPS6226458B2/ja
Priority claimed from US06/036,226 external-priority patent/US4471042A/en
Publication of JPS54145539A publication Critical patent/JPS54145539A/en
Priority claimed from US06/418,293 external-priority patent/US4565731A/en
Publication of JPS6226458B2 publication Critical patent/JPS6226458B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form the title image forming material superior in resistance to humidity and to fatigue due to light, and resistant to repeated uses, by using for a photoconductive layer an amorphous Si or Ge (a-Si or a-Ge) semiconductor containing a specified chemically modifying substance.
CONSTITUTION: On substrate 2, such as stainless steel, aluminum, or other metals, a resin sheet subjected to surface conductivity imparting treatment, or glass, photoconductor layer 3 is formed by glow discharge, sputtering, or the like, consisting of an a-Si(or a-Ge) semiconductor containing about 0.1 to 30 mole % (preferably 0.2 to 15 mole %) oxygen or nitrogen as a chemically modifying substance to use as electrophotographic image forming material 1. In order to add the above substance into the a-Si semiconductor layer a gas, such as O2 or CO, or a gas, such as N2 or NH3 is introduced together with a raw material gas for a-Si formation, e.g. during glow discharge for forming a semiconductor.
COPYRIGHT: (C)1979,JPO&Japio
JP53053605A 1978-05-04 1978-05-04 Expired JPS6226458B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53053605A JPS6226458B2 (en) 1978-05-04 1978-05-04

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP53053605A JPS6226458B2 (en) 1978-05-04 1978-05-04
US06/036,226 US4471042A (en) 1978-05-04 1979-05-04 Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
US06/418,293 US4565731A (en) 1978-05-04 1982-09-15 Image-forming member for electrophotography
US06/790,155 US4664998A (en) 1978-05-04 1985-10-22 Electrophotographic image forming member having hydrogenated amorphous photoconductive layer including carbon
US06/932,160 US4745041A (en) 1978-05-04 1986-11-18 CVD process for forming semiconducting film having hydrogenated germanium matrix
US07/198,582 US4830946A (en) 1978-05-04 1988-05-16 CVD process for forming an image forming member for electrophotography
US08/471,156 US5573884A (en) 1978-05-04 1995-06-06 Image-forming member for electrophotography
US08/479,856 US5753936A (en) 1978-05-04 1995-06-07 Image forming member for electrophotography

Publications (2)

Publication Number Publication Date
JPS54145539A true JPS54145539A (en) 1979-11-13
JPS6226458B2 JPS6226458B2 (en) 1987-06-09

Family

ID=12947510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53053605A Expired JPS6226458B2 (en) 1978-05-04 1978-05-04

Country Status (1)

Country Link
JP (1) JPS6226458B2 (en)

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624354A (en) * 1979-08-07 1981-03-07 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS5664347A (en) * 1979-10-30 1981-06-01 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS5692543A (en) * 1979-12-27 1981-07-27 Fujitsu Ltd Preparation of electrophotographic receptor
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS56142681A (en) * 1980-04-07 1981-11-07 Matsushita Electric Ind Co Ltd Photoelectric converter and manufacture thereof
JPS56156834A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS56156835A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS56156836A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS5737352A (en) * 1980-08-15 1982-03-01 Stanley Electric Co Ltd Electrophotographic receptor
JPS5753227U (en) * 1980-09-10 1982-03-27
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member
JPS5781268A (en) * 1980-11-08 1982-05-21 Takao Kawamura Electrophotographic receptor
JPS5790933A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of amorphous semiconductor film
JPS57119362A (en) * 1981-01-17 1982-07-24 Canon Inc Photoconductive member
JPS57122446A (en) * 1981-09-24 1982-07-30 Shunpei Yamazaki Copying machine
JPS57147279A (en) * 1981-03-09 1982-09-11 Stanley Electric Co Ltd Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor
DE3212184A1 (en) * 1981-04-17 1982-11-11 Minolta Camera Kk Photosensitive cell
DE3211081A1 (en) * 1981-03-25 1982-11-18 Minolta Camera Kk LIGHT SENSITIVE ELEMENT
JPS5812322A (en) * 1981-07-15 1983-01-24 Hitachi Ltd Formation of semiconductor film
JPS5837648A (en) * 1981-07-17 1983-03-04 Plasma Physics Corp Glow discharge method and apparatus and photosensitive body device prepared thereby
JPS5891684A (en) * 1981-11-26 1983-05-31 Canon Inc Photoconductive member
JPS5893385A (en) * 1981-11-30 1983-06-03 Canon Inc Photoconductive member
JPS5895743A (en) * 1981-12-03 1983-06-07 Seiko Epson Corp Image forming member for electrophotography
JPS58100137A (en) * 1981-12-11 1983-06-14 Toshiba Corp Electrophotographic receptor and its manufacture
JPS58106547A (en) * 1981-12-21 1983-06-24 Seiko Epson Corp Manufacture of electrophotographic photo-receptor
JPS58106546A (en) * 1981-12-21 1983-06-24 Seiko Epson Corp Manufacture of electrophotographic photo-receptor
JPS58107546A (en) * 1981-12-22 1983-06-27 Seiko Epson Corp Manufacture of electrophotographic receptor
JPS58168215A (en) * 1982-03-30 1983-10-04 Fuji Electric Corp Res & Dev Ltd Amorphous semiconductor
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
US4489149A (en) * 1980-05-08 1984-12-18 Minolta Camera Kabushiki Kaisha Electrophotographic amorphous silicon member
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
JPS608847A (en) * 1983-06-29 1985-01-17 Toshiba Corp Electrophotographic sensitive body
JPS60104954A (en) * 1983-11-11 1985-06-10 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS60104955A (en) * 1983-11-11 1985-06-10 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS60125846A (en) * 1983-12-09 1985-07-05 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS60128456A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Photosensitive body for electrophotography
JPS62288851A (en) * 1986-06-09 1987-12-15 Stanley Electric Co Ltd Electrophotographic sensitive body having amorphous silicon carrier generating layer
JPS63219159A (en) * 1987-12-25 1988-09-12 Matsushita Electric Ind Co Ltd Photoelectric conversion element
JPH03255459A (en) * 1990-11-16 1991-11-14 Matsushita Electric Ind Co Ltd Production of electrophotographic sensitive body
JPH0588390A (en) * 1982-11-01 1993-04-09 Kanegafuchi Chem Ind Co Ltd Semiconductor device for photosensitive body
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
JPH07140691A (en) * 1994-05-16 1995-06-02 Semiconductor Energy Lab Co Ltd Production of drum-shaped photosensitive body
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device

Cited By (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624354A (en) * 1979-08-07 1981-03-07 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS5664347A (en) * 1979-10-30 1981-06-01 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS639219B2 (en) * 1979-10-30 1988-02-26 Fuji Photo Film Co Ltd
JPS5692543A (en) * 1979-12-27 1981-07-27 Fujitsu Ltd Preparation of electrophotographic receptor
JPS6335025B2 (en) * 1980-02-15 1988-07-13 Matsushita Electric Ind Co Ltd
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS56142681A (en) * 1980-04-07 1981-11-07 Matsushita Electric Ind Co Ltd Photoelectric converter and manufacture thereof
JPH0338584B2 (en) * 1980-05-08 1991-06-11 Minoruta Kamera Kk
JPS56156836A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS6247302B2 (en) * 1980-05-08 1987-10-07 Minoruta Kamera Kk
JPS56156835A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS56156834A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
US4489149A (en) * 1980-05-08 1984-12-18 Minolta Camera Kabushiki Kaisha Electrophotographic amorphous silicon member
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
JPH0334060B2 (en) * 1980-08-15 1991-05-21 Stanley Electric Co Ltd
JPS5737352A (en) * 1980-08-15 1982-03-01 Stanley Electric Co Ltd Electrophotographic receptor
JPS5753227U (en) * 1980-09-10 1982-03-27
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member
JPS5781268A (en) * 1980-11-08 1982-05-21 Takao Kawamura Electrophotographic receptor
JPH0241023B2 (en) * 1980-11-08 1990-09-14 Minoruta Kamera Kk
JPS5790933A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Manufacture of amorphous semiconductor film
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
JPS628784B2 (en) * 1981-01-17 1987-02-24 Canon Kk
JPS57119362A (en) * 1981-01-17 1982-07-24 Canon Inc Photoconductive member
JPS57147279A (en) * 1981-03-09 1982-09-11 Stanley Electric Co Ltd Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor
DE3211081A1 (en) * 1981-03-25 1982-11-18 Minolta Camera Kk LIGHT SENSITIVE ELEMENT
DE3212184A1 (en) * 1981-04-17 1982-11-11 Minolta Camera Kk Photosensitive cell
JPS5812322A (en) * 1981-07-15 1983-01-24 Hitachi Ltd Formation of semiconductor film
JPS5837648A (en) * 1981-07-17 1983-03-04 Plasma Physics Corp Glow discharge method and apparatus and photosensitive body device prepared thereby
JPS57122446A (en) * 1981-09-24 1982-07-30 Shunpei Yamazaki Copying machine
JPS5891684A (en) * 1981-11-26 1983-05-31 Canon Inc Photoconductive member
JPH0376034B2 (en) * 1981-11-26 1991-12-04 Canon Kk
JPH0376035B2 (en) * 1981-11-30 1991-12-04 Canon Kk
JPS5893385A (en) * 1981-11-30 1983-06-03 Canon Inc Photoconductive member
JPS5895743A (en) * 1981-12-03 1983-06-07 Seiko Epson Corp Image forming member for electrophotography
JPH0338585B2 (en) * 1981-12-11 1991-06-11 Tokyo Shibaura Electric Co
JPS58100137A (en) * 1981-12-11 1983-06-14 Toshiba Corp Electrophotographic receptor and its manufacture
JPS58106547A (en) * 1981-12-21 1983-06-24 Seiko Epson Corp Manufacture of electrophotographic photo-receptor
JPS58106546A (en) * 1981-12-21 1983-06-24 Seiko Epson Corp Manufacture of electrophotographic photo-receptor
JPS58107546A (en) * 1981-12-22 1983-06-27 Seiko Epson Corp Manufacture of electrophotographic receptor
JPS58168215A (en) * 1982-03-30 1983-10-04 Fuji Electric Corp Res & Dev Ltd Amorphous semiconductor
JPH0588390A (en) * 1982-11-01 1993-04-09 Kanegafuchi Chem Ind Co Ltd Semiconductor device for photosensitive body
JPS59179151A (en) * 1983-03-30 1984-10-11 Mitsui Toatsu Chem Inc Production of amorphous thin film
JPH0548912B2 (en) * 1983-06-29 1993-07-22 Tokyo Shibaura Electric Co
JPS608847A (en) * 1983-06-29 1985-01-17 Toshiba Corp Electrophotographic sensitive body
JPS60104955A (en) * 1983-11-11 1985-06-10 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS60104954A (en) * 1983-11-11 1985-06-10 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS60125846A (en) * 1983-12-09 1985-07-05 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS60128456A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Photosensitive body for electrophotography
JPS62288851A (en) * 1986-06-09 1987-12-15 Stanley Electric Co Ltd Electrophotographic sensitive body having amorphous silicon carrier generating layer
JPS63219159A (en) * 1987-12-25 1988-09-12 Matsushita Electric Ind Co Ltd Photoelectric conversion element
JPH0541990B2 (en) * 1990-11-16 1993-06-25 Matsushita Electric Ind Co Ltd
JPH03255459A (en) * 1990-11-16 1991-11-14 Matsushita Electric Ind Co Ltd Production of electrophotographic sensitive body
JPH07140691A (en) * 1994-05-16 1995-06-02 Semiconductor Energy Lab Co Ltd Production of drum-shaped photosensitive body

Also Published As

Publication number Publication date
JPS6226458B2 (en) 1987-06-09

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