JPS57196262A - Electrophotographic photoreceptor - Google Patents

Electrophotographic photoreceptor

Info

Publication number
JPS57196262A
JPS57196262A JP8074581A JP8074581A JPS57196262A JP S57196262 A JPS57196262 A JP S57196262A JP 8074581 A JP8074581 A JP 8074581A JP 8074581 A JP8074581 A JP 8074581A JP S57196262 A JPS57196262 A JP S57196262A
Authority
JP
Japan
Prior art keywords
silicon hydride
hydride layer
film
layer
30atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8074581A
Other languages
Japanese (ja)
Other versions
JPH0241742B2 (en
Inventor
Yukio Suzuki
Takeshi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8074581A priority Critical patent/JPS57196262A/en
Priority to US06/382,285 priority patent/US4560634A/en
Priority to DE8282104724T priority patent/DE3279006D1/en
Priority to EP82104724A priority patent/EP0066812B1/en
Publication of JPS57196262A publication Critical patent/JPS57196262A/en
Publication of JPH0241742B2 publication Critical patent/JPH0241742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To improve the production speed of an electrophotographic photoreceptor and enhance the sensitization effect of the region of a long wavelength which is less in the single layer, by laminating an amorphous silicon hydride layer and a microcrystalline silicon hydride layer on a conductive base material. CONSTITUTION:A conductive substrate consisting of Al or the like is put in a vacuous reaction vessel, and gaseous silane (SiH4) is decomposed in a hydrogen flow by a high-frequency glow discharge to form an amorphous silicon hydride layer on the Al substrate. The film thickness is 3-30mu desirably, and the quantity of H included in the film is 15-30atom%. The silicon is used as the target to perform a high-frequency sputtering in a hydrogen flow, and a microcrystalline silicon hydride layer is formed at a normal temperature. The film thickness is 0.1-10mu desirably, and the content of hydrogen in the film is 15-30atom%. A photoreceptor having this two-layered structure has a high productivity and the resistance to impression, and the sensitization region is enlarged.
JP8074581A 1981-05-29 1981-05-29 Electrophotographic photoreceptor Granted JPS57196262A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8074581A JPS57196262A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor
US06/382,285 US4560634A (en) 1981-05-29 1982-05-26 Electrophotographic photosensitive member using microcrystalline silicon
DE8282104724T DE3279006D1 (en) 1981-05-29 1982-05-28 Electrophotographic photosensitive member
EP82104724A EP0066812B1 (en) 1981-05-29 1982-05-28 Electrophotographic photosensitive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8074581A JPS57196262A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor

Publications (2)

Publication Number Publication Date
JPS57196262A true JPS57196262A (en) 1982-12-02
JPH0241742B2 JPH0241742B2 (en) 1990-09-19

Family

ID=13726932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8074581A Granted JPS57196262A (en) 1981-05-29 1981-05-29 Electrophotographic photoreceptor

Country Status (1)

Country Link
JP (1) JPS57196262A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022382A (en) * 1983-07-19 1985-02-04 Toshiba Corp Photoconductive member
JPS61295577A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS61295576A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS61295574A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022382A (en) * 1983-07-19 1985-02-04 Toshiba Corp Photoconductive member
JPS61295577A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS61295576A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS61295574A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member

Also Published As

Publication number Publication date
JPH0241742B2 (en) 1990-09-19

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