JPS54145537A - Preparation of electrophotographic image forming material - Google Patents

Preparation of electrophotographic image forming material

Info

Publication number
JPS54145537A
JPS54145537A JP5360478A JP5360478A JPS54145537A JP S54145537 A JPS54145537 A JP S54145537A JP 5360478 A JP5360478 A JP 5360478A JP 5360478 A JP5360478 A JP 5360478A JP S54145537 A JPS54145537 A JP S54145537A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
photoconductor layer
sih4
introduced
high frequency
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5360478A
Other versions
JPS6212509B2 (en )
Inventor
Tadaharu Fukuda
Yutaka Hirai
Toshiyuki Komatsu
Katsumi Nakagawa
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Abstract

PURPOSE:To provide the title material not causing environmental pollution, being superior in resistance to heat, humidity, and all the other environmental conditions, and being stabilized in electro-photographic characteristics, by forming an amorphous silicon type photoconductor layer on a substrate from reaction gases under the action of discharge energy. CONSTITUTION:Base plate 7 fixed with fixing member 8 is heated to a predetermined temperature with heater 9 in glow discharge deposition chamber 6 evacuated to about a vacuum of 10<-5> Torr through main valve 29. Then, reaction gases of SiH4 and PH3, and Ar are introduced there from gas cylinders 12 to 14 through flowmeters 16 to 18, and high frequency waves are applied from high frequency wave source 10 to capacitance type electrodes 11 and 11' wound in the upper part of chamber 6 to generate glow discharge. SiH4 decomposes and Si deposits on plate 7, forming an amorphous Si type photoconductor layer. Next, NH3, NO, or NO2 is introduced from gas cylinder 15 to form a surface coating layer on the photoconductor layer.
JP5360478A 1978-05-04 1978-05-04 Expired JPS6212509B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5360478A JPS6212509B2 (en) 1978-05-04 1978-05-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5360478A JPS6212509B2 (en) 1978-05-04 1978-05-04

Publications (2)

Publication Number Publication Date
JPS54145537A true true JPS54145537A (en) 1979-11-13
JPS6212509B2 JPS6212509B2 (en) 1987-03-19

Family

ID=12947480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5360478A Expired JPS6212509B2 (en) 1978-05-04 1978-05-04

Country Status (1)

Country Link
JP (1) JPS6212509B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS56156834A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS56161551A (en) * 1980-05-16 1981-12-11 Canon Inc Image forming member for electrophotography
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member
JPS57119362A (en) * 1981-01-17 1982-07-24 Canon Inc Photoconductive member
JPS57122446A (en) * 1981-09-24 1982-07-30 Shunpei Yamazaki Copying machine
JPS57177152A (en) * 1981-04-24 1982-10-30 Canon Inc Electrophotographic image forming material
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor
JPS57202546A (en) * 1981-06-08 1982-12-11 Semiconductor Energy Lab Co Ltd Electrostatic copier
JPS5837648A (en) * 1981-07-17 1983-03-04 Plasma Physics Corp Glow discharge method and apparatus and photosensitive body device prepared thereby
JPS58145951A (en) * 1982-02-24 1983-08-31 Stanley Electric Co Ltd Amorphous silicon photoreceptor
JPS58152255A (en) * 1982-03-05 1983-09-09 Stanley Electric Co Ltd Electrophotographic receptor
JPS593018A (en) * 1982-06-25 1984-01-09 Hitachi Ltd Manufacture of silicon-base film by plasma deposition
JPS5983168A (en) * 1982-11-05 1984-05-14 Stanley Electric Co Ltd Electrophotographic receptor
JPS6017452A (en) * 1984-06-25 1985-01-29 Shunpei Yamazaki Manufacture of copying machine
JPS6017451A (en) * 1984-06-25 1985-01-29 Shunpei Yamazaki Manufacture of copying machine
JPS61116361A (en) * 1984-11-10 1986-06-03 Matsushita Electric Ind Co Ltd Electrophotographic sensitive body
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
JPH06202360A (en) * 1993-10-25 1994-07-22 Semiconductor Energy Lab Co Ltd Electrophotographic sensitive body

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647427A (en) * 1969-08-27 1972-03-07 Canon Kk Germanium and silicon additives to dual-layer electrophotographic plates
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
JPS48102623A (en) * 1972-03-07 1973-12-24
JPS49122337A (en) * 1973-03-23 1974-11-22
JPS5020728A (en) * 1973-06-20 1975-03-05
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
JPS52122471A (en) * 1976-03-22 1977-10-14 Rca Corp Schottky barier semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US3647427A (en) * 1969-08-27 1972-03-07 Canon Kk Germanium and silicon additives to dual-layer electrophotographic plates
JPS48102623A (en) * 1972-03-07 1973-12-24
JPS49122337A (en) * 1973-03-23 1974-11-22
JPS5020728A (en) * 1973-06-20 1975-03-05
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS52122471A (en) * 1976-03-22 1977-10-14 Rca Corp Schottky barier semiconductor device
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS6335025B2 (en) * 1980-02-15 1988-07-13 Matsushita Electric Ind Co Ltd
JPS56156834A (en) * 1980-05-08 1981-12-03 Takao Kawamura Electrophotographic receptor
JPS6247302B2 (en) * 1980-05-08 1987-10-07 Minoruta Kamera Kk
JPS6161388B2 (en) * 1980-05-16 1986-12-25 Canon Kk
JPS56161551A (en) * 1980-05-16 1981-12-11 Canon Inc Image forming member for electrophotography
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member
JPS628784B2 (en) * 1981-01-17 1987-02-24 Canon Kk
JPS57119362A (en) * 1981-01-17 1982-07-24 Canon Inc Photoconductive member
JPS57177152A (en) * 1981-04-24 1982-10-30 Canon Inc Electrophotographic image forming material
JPS628786B2 (en) * 1981-04-24 1987-02-24 Canon Kk
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor
JPS57202546A (en) * 1981-06-08 1982-12-11 Semiconductor Energy Lab Co Ltd Electrostatic copier
JPS5837648A (en) * 1981-07-17 1983-03-04 Plasma Physics Corp Glow discharge method and apparatus and photosensitive body device prepared thereby
JPS57122446A (en) * 1981-09-24 1982-07-30 Shunpei Yamazaki Copying machine
JPS58145951A (en) * 1982-02-24 1983-08-31 Stanley Electric Co Ltd Amorphous silicon photoreceptor
JPS58152255A (en) * 1982-03-05 1983-09-09 Stanley Electric Co Ltd Electrophotographic receptor
JPS593018A (en) * 1982-06-25 1984-01-09 Hitachi Ltd Manufacture of silicon-base film by plasma deposition
JPS5983168A (en) * 1982-11-05 1984-05-14 Stanley Electric Co Ltd Electrophotographic receptor
JPS6017451A (en) * 1984-06-25 1985-01-29 Shunpei Yamazaki Manufacture of copying machine
JPS6017452A (en) * 1984-06-25 1985-01-29 Shunpei Yamazaki Manufacture of copying machine
JPS61116361A (en) * 1984-11-10 1986-06-03 Matsushita Electric Ind Co Ltd Electrophotographic sensitive body
JPH06202360A (en) * 1993-10-25 1994-07-22 Semiconductor Energy Lab Co Ltd Electrophotographic sensitive body

Also Published As

Publication number Publication date Type
JPS6212509B2 (en) 1987-03-19 grant

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