JPS57153427A - Manufacture of thin film device - Google Patents

Manufacture of thin film device

Info

Publication number
JPS57153427A
JPS57153427A JP3850781A JP3850781A JPS57153427A JP S57153427 A JPS57153427 A JP S57153427A JP 3850781 A JP3850781 A JP 3850781A JP 3850781 A JP3850781 A JP 3850781A JP S57153427 A JPS57153427 A JP S57153427A
Authority
JP
Japan
Prior art keywords
layer
film
metallic
onto
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3850781A
Other languages
Japanese (ja)
Inventor
Kiyoshi Ozawa
Nobuyoshi Takagi
Satoru Kawai
Toshiro Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3850781A priority Critical patent/JPS57153427A/en
Publication of JPS57153427A publication Critical patent/JPS57153427A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

PURPOSE:To obtain laminated structure having desired electrical characteristics without shaping a projection in a metallic layer by previously forming an oxide film onto the surface of the metallic layer when an insulating film or an amorphous semiconductor layer is formed to the surface of the metallic layer made of Al, Cu, etc. through a glow discharge decomposition method. CONSTITUTION:The Al or Cu layer 2 according to a predetermined pattern is shaped onto an insulating substrate 1 made of glass, etc., and oxidized through an anodic oxidation method. The surface is heated in an O2 atmosphere or plasma-treated in O2 plasma, and the metallic oxide film 11 is formed onto the exposed surface of the layer 2. The whole surface containing the film 11 is coated with a SiO2 film 3 through a glow discharge decomposition method using SiH4 and O2, and an amorphous Si layer 4 is deposited onto the film 3 by employing the mixed gas of SiH4 and Ar or H2. Accordingly, the undesired projection is not generated in the metallic layer of a lower layer and the amorphous Si layer having predetermined characteristics is obtained, and the Si layer is proper to the manufacture of a FET, etc.
JP3850781A 1981-03-17 1981-03-17 Manufacture of thin film device Pending JPS57153427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3850781A JPS57153427A (en) 1981-03-17 1981-03-17 Manufacture of thin film device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3850781A JPS57153427A (en) 1981-03-17 1981-03-17 Manufacture of thin film device

Publications (1)

Publication Number Publication Date
JPS57153427A true JPS57153427A (en) 1982-09-22

Family

ID=12527177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3850781A Pending JPS57153427A (en) 1981-03-17 1981-03-17 Manufacture of thin film device

Country Status (1)

Country Link
JP (1) JPS57153427A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147069A (en) * 1982-02-25 1983-09-01 Sharp Corp Thin film transistor
JPS5991756U (en) * 1982-12-13 1984-06-21 三洋電機株式会社 lcd matrix panel
JPS59141271A (en) * 1983-01-31 1984-08-13 Sharp Corp Thin-film transistor
JPS60109285A (en) * 1983-11-17 1985-06-14 Seiko Instr & Electronics Ltd Thin film transistor
JPS63164A (en) * 1986-06-19 1988-01-05 Matsushita Electric Ind Co Ltd Thin-film transistor
JPS63126277A (en) * 1986-07-16 1988-05-30 Seikosha Co Ltd Field effect thin film transistor
JPH0376232A (en) * 1989-08-18 1991-04-02 Oki Electric Ind Co Ltd Manufacture of display device
US5320973A (en) * 1986-07-11 1994-06-14 Fuji Xerox Co., Ltd. Method of fabricating a thin-film transistor and wiring matrix device
JPH07147416A (en) * 1994-08-10 1995-06-06 Sanyo Electric Co Ltd Manufacture of liquid crystal matrix panel

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147069A (en) * 1982-02-25 1983-09-01 Sharp Corp Thin film transistor
JPH0514521Y2 (en) * 1982-12-13 1993-04-19
JPS5991756U (en) * 1982-12-13 1984-06-21 三洋電機株式会社 lcd matrix panel
JPS59141271A (en) * 1983-01-31 1984-08-13 Sharp Corp Thin-film transistor
JPH0582069B2 (en) * 1983-01-31 1993-11-17 Sharp Kk
JPS60109285A (en) * 1983-11-17 1985-06-14 Seiko Instr & Electronics Ltd Thin film transistor
JPH0546990B2 (en) * 1986-06-19 1993-07-15 Matsushita Electric Ind Co Ltd
JPS63164A (en) * 1986-06-19 1988-01-05 Matsushita Electric Ind Co Ltd Thin-film transistor
US5320973A (en) * 1986-07-11 1994-06-14 Fuji Xerox Co., Ltd. Method of fabricating a thin-film transistor and wiring matrix device
JPS63126277A (en) * 1986-07-16 1988-05-30 Seikosha Co Ltd Field effect thin film transistor
JPH0376232A (en) * 1989-08-18 1991-04-02 Oki Electric Ind Co Ltd Manufacture of display device
JPH07147416A (en) * 1994-08-10 1995-06-06 Sanyo Electric Co Ltd Manufacture of liquid crystal matrix panel
JP2538523B2 (en) * 1994-08-10 1996-09-25 三洋電機株式会社 Liquid crystal matrix panel manufacturing method

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