JPS57106179A - Manufacture of amorphous silicon mis type optical sensor - Google Patents
Manufacture of amorphous silicon mis type optical sensorInfo
- Publication number
- JPS57106179A JPS57106179A JP55183428A JP18342880A JPS57106179A JP S57106179 A JPS57106179 A JP S57106179A JP 55183428 A JP55183428 A JP 55183428A JP 18342880 A JP18342880 A JP 18342880A JP S57106179 A JPS57106179 A JP S57106179A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- manufacture
- optical sensor
- type optical
- mis type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Abstract
PURPOSE:To form a thin excellent oxide layer on hydrogenated amorphous silicon in superior controllability by executing anode plasma oxidation or the glow discharged of a silane gas containing oxygen onto the surface of the hydrogenated amorphous Si. CONSTITUTION:The silane gas is decomposed through glow discharge in a plasma decomposition reactor and plasma 4 is formed, and the amorphous Si 10 is deposited onto a glass substrate 8. An oxygen gas is introduced, anode plasma oxidation is executed, and extremely thin SiO2 11 oxidized is shaped onto a surface layer of the amorphous silicon 10. Accordingly, the thin excellent insulating film with 20-40Angstrom can be formed in superior controllability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55183428A JPS57106179A (en) | 1980-12-24 | 1980-12-24 | Manufacture of amorphous silicon mis type optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55183428A JPS57106179A (en) | 1980-12-24 | 1980-12-24 | Manufacture of amorphous silicon mis type optical sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57106179A true JPS57106179A (en) | 1982-07-01 |
Family
ID=16135596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55183428A Pending JPS57106179A (en) | 1980-12-24 | 1980-12-24 | Manufacture of amorphous silicon mis type optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106179A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5140397A (en) * | 1985-03-14 | 1992-08-18 | Ricoh Company, Ltd. | Amorphous silicon photoelectric device |
-
1980
- 1980-12-24 JP JP55183428A patent/JPS57106179A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5140397A (en) * | 1985-03-14 | 1992-08-18 | Ricoh Company, Ltd. | Amorphous silicon photoelectric device |
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