JPS5626540A - Selective oxidation of silicon in oxygen plasma - Google Patents

Selective oxidation of silicon in oxygen plasma

Info

Publication number
JPS5626540A
JPS5626540A JP10306079A JP10306079A JPS5626540A JP S5626540 A JPS5626540 A JP S5626540A JP 10306079 A JP10306079 A JP 10306079A JP 10306079 A JP10306079 A JP 10306079A JP S5626540 A JPS5626540 A JP S5626540A
Authority
JP
Japan
Prior art keywords
silicon
oxygen plasma
oxidation
oxide film
selective oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10306079A
Other languages
Japanese (ja)
Inventor
Takuo Sugano
Hoo.Kotsuku.Buu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO DAIGAKU
Original Assignee
TOKYO DAIGAKU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO DAIGAKU filed Critical TOKYO DAIGAKU
Priority to JP10306079A priority Critical patent/JPS5626540A/en
Publication of JPS5626540A publication Critical patent/JPS5626540A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To form a selectively oxidizable silicone oxide film by masking part of a silicon substrate with a metal oxide film in the oxidation of the silicon in oxygen plasma.
CONSTITUTION: In the oxidation of silicon in oxygen plasma, part of the surface of the silicon substrate is covered with the metal oxide film in which ion drifting speed is slower than in the silicon dioxide film. Then, oxidation is made in the oxygen plasma, the oxidation of the silicon in the metal oxide film is interrupted and only the portion not masked is selectively oxidized. Thus, the selective oxidation of the silicon in the oxygen plasma can be easily performed in a short time.
COPYRIGHT: (C)1981,JPO&Japio
JP10306079A 1979-08-13 1979-08-13 Selective oxidation of silicon in oxygen plasma Pending JPS5626540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10306079A JPS5626540A (en) 1979-08-13 1979-08-13 Selective oxidation of silicon in oxygen plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10306079A JPS5626540A (en) 1979-08-13 1979-08-13 Selective oxidation of silicon in oxygen plasma

Publications (1)

Publication Number Publication Date
JPS5626540A true JPS5626540A (en) 1981-03-14

Family

ID=14344124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10306079A Pending JPS5626540A (en) 1979-08-13 1979-08-13 Selective oxidation of silicon in oxygen plasma

Country Status (1)

Country Link
JP (1) JPS5626540A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54164082A (en) * 1973-05-30 1979-12-27 Agfa Gevaert Ag Device of working fringe of lens in soft material
JPS61141063U (en) * 1985-02-21 1986-09-01
WO2022119865A1 (en) * 2020-12-01 2022-06-09 Versum Materials Us, Llc Selective plasma enhanced atomic layer deposition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54164082A (en) * 1973-05-30 1979-12-27 Agfa Gevaert Ag Device of working fringe of lens in soft material
JPS61141063U (en) * 1985-02-21 1986-09-01
JPS6310911Y2 (en) * 1985-02-21 1988-03-31
WO2022119865A1 (en) * 2020-12-01 2022-06-09 Versum Materials Us, Llc Selective plasma enhanced atomic layer deposition

Similar Documents

Publication Publication Date Title
JPS5626540A (en) Selective oxidation of silicon in oxygen plasma
JPS5210193A (en) Element for oxygen concentration measuring use
JPS537172A (en) Solder-sealed ceramic package
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS51136288A (en) Photo etching using non-crystalline carchogenide glass thin film
JPS52139372A (en) Selective etching method of thin films
JPS51151453A (en) Change gear
JPS5230047A (en) Bubble breaking method
JPS575368A (en) Manufacture of semiconductor device
JPS5430780A (en) Manufacture of semiconductor device
JPS51125698A (en) The formation of silicon dioxide film
JPS5245270A (en) Semiconductor device
JPS5421272A (en) Metal photo mask
JPS5326575A (en) Ion etching method
JPS52154344A (en) Impurity diffusion method
JPS56148825A (en) Manufacture of semiconductor device
JPS5362983A (en) Formation method of selective oxide regions
JPS5239238A (en) Selector tape for elevator
JPS5436181A (en) Manufacture for semiconductor device
JPS53112685A (en) Semiconductor device and its manufacture
JPS5266881A (en) Process for separation by membrane
JPS51142256A (en) Phase-discrimination circuit
JPS53117963A (en) Production of semiconductor device
JPS528347A (en) Motorized pinball machine
JPS5386577A (en) Production of semiconductor device