JPS57208514A - Manufacture of diffraction grating - Google Patents

Manufacture of diffraction grating

Info

Publication number
JPS57208514A
JPS57208514A JP9375181A JP9375181A JPS57208514A JP S57208514 A JPS57208514 A JP S57208514A JP 9375181 A JP9375181 A JP 9375181A JP 9375181 A JP9375181 A JP 9375181A JP S57208514 A JPS57208514 A JP S57208514A
Authority
JP
Japan
Prior art keywords
layer
diffraction grating
si3n4
resist layer
grating pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9375181A
Other languages
Japanese (ja)
Inventor
Takafumi Tsuji
Genichi Hatagoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9375181A priority Critical patent/JPS57208514A/en
Publication of JPS57208514A publication Critical patent/JPS57208514A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams

Abstract

PURPOSE:To obtain a diffraction grating having minimum pitch width by forming a diffraction grating pattern by successively laminating a silicon nitride layer and a resist layer on the surface of a light guide layer which uses glass with a high refractive index, and then performing mixed gas plasma etching. CONSTITUTION:On an Si substrate 11, an SiO2 layer 12 is formed by thermal oxidation and on it, a light guide layer 13 which uses glass containing Al2O3 as a high refractive index material is laminated. On the layer 13, an Si3N4 layer 25 is further formed by CVD, and the surface is coated with an electron beam resist layer 26. After a diffraction grating pattern 27 is formed on this resist layer 26 by exposure and development, the Si3N4 layer 25 is etched by a mixed gas plasma treatment to remove the resist layer 27. Thus, the Si3N4 layer 14 in the diffraction grating pattern is obtained. The pitch width of a diffraction grating by this method attains to about 0.2mum, so a <=1mum spot diameter is realized in designing.
JP9375181A 1981-06-19 1981-06-19 Manufacture of diffraction grating Pending JPS57208514A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9375181A JPS57208514A (en) 1981-06-19 1981-06-19 Manufacture of diffraction grating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9375181A JPS57208514A (en) 1981-06-19 1981-06-19 Manufacture of diffraction grating

Publications (1)

Publication Number Publication Date
JPS57208514A true JPS57208514A (en) 1982-12-21

Family

ID=14091126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9375181A Pending JPS57208514A (en) 1981-06-19 1981-06-19 Manufacture of diffraction grating

Country Status (1)

Country Link
JP (1) JPS57208514A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1417517A1 (en) * 2001-05-08 2004-05-12 Commonwealth Scientific And Industrial Research Organisation An optical device and methods of manufacture
US9176266B2 (en) 2009-12-04 2015-11-03 Giesecke & Devrient Gmbh Security element, value document comprising such a security element and method for producing such a security element
US9297941B2 (en) 2011-07-21 2016-03-29 Giesecke & Deverient Gmbh Optically variable element, in particular security element
JP2017194361A (en) * 2016-04-21 2017-10-26 日本電信電話株式会社 Dielectric spectroscopic device
US9827802B2 (en) 2009-12-04 2017-11-28 Giesecke+Devrient Currency Technology Gmbh Security element, value document comprising such a security element, and method for producing such a security element
US10261223B2 (en) 2014-01-31 2019-04-16 Canon Usa, Inc. System and method for fabrication of miniature endoscope using nanoimprint lithography

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1417517A1 (en) * 2001-05-08 2004-05-12 Commonwealth Scientific And Industrial Research Organisation An optical device and methods of manufacture
EP1417517A4 (en) * 2001-05-08 2008-06-04 Commw Scient Ind Res Org An optical device and methods of manufacture
US9176266B2 (en) 2009-12-04 2015-11-03 Giesecke & Devrient Gmbh Security element, value document comprising such a security element and method for producing such a security element
US9827802B2 (en) 2009-12-04 2017-11-28 Giesecke+Devrient Currency Technology Gmbh Security element, value document comprising such a security element, and method for producing such a security element
US10525758B2 (en) 2009-12-04 2020-01-07 Giesecke+Devrient Currency Technology Gmbh Security element, value document comprising such a security element, and method for producing such a security element
US9297941B2 (en) 2011-07-21 2016-03-29 Giesecke & Deverient Gmbh Optically variable element, in particular security element
US10261223B2 (en) 2014-01-31 2019-04-16 Canon Usa, Inc. System and method for fabrication of miniature endoscope using nanoimprint lithography
JP2017194361A (en) * 2016-04-21 2017-10-26 日本電信電話株式会社 Dielectric spectroscopic device

Similar Documents

Publication Publication Date Title
US5234537A (en) Dry etching method and its application
EP0020776A4 (en) Method of forming patterns.
JPH05265186A (en) Self-aligned phase shift mask and its production
JPS5656636A (en) Processing method of fine pattern
JPS57208514A (en) Manufacture of diffraction grating
JPS57168246A (en) Formation of negative pattern
JPS57168247A (en) Formation of negative pattern
JPS5730130A (en) Production of abrasive-dish original disk with groove for video disk stylus
JPS5642204A (en) Production of photocircuit
JPH04293234A (en) Etching method of sic
JPS5545019A (en) Production of photo mask
JPS5680133A (en) Formation of pattern
JPS613489A (en) Manufacture of semiconductor device
JPH06258674A (en) Method for changing refractive index by light induction
JPS56140345A (en) Formation of pattern
JPS55160431A (en) Method for etching treatment
JPS5496371A (en) Mask forming method
JPH11305023A (en) Production of silicon diffraction grating
JPS5546753A (en) Pattern formation method using photosensitive chalcogenide layer
JPS57138157A (en) Manufacture of semiconductor device
JPS59194435A (en) Method for forming pattern of semiconductor device
JPS55158635A (en) Mask
JPS5749223A (en) Manufacture of semiconductor device
JPS5622942A (en) Diffraction grating and its manufacture
JPS5711344A (en) Dry developing method