JPS6463292A - Manufacture of electroluminescence element - Google Patents

Manufacture of electroluminescence element

Info

Publication number
JPS6463292A
JPS6463292A JP62219439A JP21943987A JPS6463292A JP S6463292 A JPS6463292 A JP S6463292A JP 62219439 A JP62219439 A JP 62219439A JP 21943987 A JP21943987 A JP 21943987A JP S6463292 A JPS6463292 A JP S6463292A
Authority
JP
Japan
Prior art keywords
layer
ceramic
insulation layer
ceramic substrate
luminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219439A
Other languages
Japanese (ja)
Inventor
Yoshio Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62219439A priority Critical patent/JPS6463292A/en
Publication of JPS6463292A publication Critical patent/JPS6463292A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE:To enable the entire undulated surface of a ceramic substrate to have a mirror surface and obtain uniform luminescent characteristics at any part of the surface by forming the surface of an insulation layer as a membrane layer to have a mirror or nearly mirror surface using a sputter etching method and then making the membrane layer. CONSTITUTION:A ceramic substrate 4 is obtained by sintering monolithically a ceramic base 1, an internal electrode 2 and a ceramic insulation layer 3. With the ceramic insulation layer 3 up, the ceramic substrate 4 is placed on an insulation board 10 and an Ar gas is used as an etching gas A for 30 minutes of sputter etching with 40W high frequency power and 2X10<-2>Torr pressure. The entire surface of the ceramic substrate 4 is made to have a mirror surface regardless of the undulation thereof. Then, a transparent electrode 9 comprising an intermediate layer 6, a luminescent layer 7, an insulation layer 8 and ITO is formed in turn for preventing the diffusion of detrimental metal ion from the ceramic insulation layer 3 to the luminescent layer 7 and improving the brightness characteristics of an element. The material of the electrode 9 is TaSiO as in the intermediate layer 6 and the film formation method therefor is the same as for the intermediate layer 6.
JP62219439A 1987-09-01 1987-09-01 Manufacture of electroluminescence element Pending JPS6463292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219439A JPS6463292A (en) 1987-09-01 1987-09-01 Manufacture of electroluminescence element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219439A JPS6463292A (en) 1987-09-01 1987-09-01 Manufacture of electroluminescence element

Publications (1)

Publication Number Publication Date
JPS6463292A true JPS6463292A (en) 1989-03-09

Family

ID=16735424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219439A Pending JPS6463292A (en) 1987-09-01 1987-09-01 Manufacture of electroluminescence element

Country Status (1)

Country Link
JP (1) JPS6463292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888410A (en) * 1996-04-01 1999-03-30 Denso Corporation Dry etching method and manufacturing method of manufacturing EL element using same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888410A (en) * 1996-04-01 1999-03-30 Denso Corporation Dry etching method and manufacturing method of manufacturing EL element using same

Similar Documents

Publication Publication Date Title
AUPQ653700A0 (en) Surface treated electrically conductive metal element and method of forming same
JPS6435421A (en) Thin film transistor array
JPS56160740A (en) Manufacture of thin-film field type cold cathode
JPS5472696A (en) Package for super miniature size piezoelectric oscillator
JPS6463292A (en) Manufacture of electroluminescence element
JPS57153427A (en) Manufacture of thin film device
JP3837903B2 (en) Transparent conductive film and manufacturing method thereof
JPS575372A (en) Thin film diode and manufacture thereof
JPS6463297A (en) El element
KR900701031A (en) Channel plate for image multiplier and method of manufacturing image multiplier with channel plate and channel plate
JPS5976480A (en) Amorphous silicon solar battery
JPS6414891A (en) Thin film el element
JPS56148845A (en) Manufacture of semiconductor device
KR970023598A (en) Field emission micro-tip and its manufacturing method
JPS5749285A (en) Production of josephson junction element
JPS5646582A (en) Formation of pattern of filmlike article
JPS5671942A (en) Oxide film coating of compound semiconductor device
JPS57186360A (en) Semiconductor device
JPS5514667A (en) Gas discharging panel
JPS6411379A (en) Superconducting film structure
JPS5313352A (en) Magic eye and its manufacture
JPS56118243A (en) Cathode for dc type gas discharge indication panel and manufacture
JPS5637674A (en) Manufacture of semiconductor device
JPS5637666A (en) Semiconductor integrated circuit
JPS6441197A (en) Thin film electroluminescent element