JPS5482983A - Manufacture of insulating gate type field effect transistor - Google Patents

Manufacture of insulating gate type field effect transistor

Info

Publication number
JPS5482983A
JPS5482983A JP15086077A JP15086077A JPS5482983A JP S5482983 A JPS5482983 A JP S5482983A JP 15086077 A JP15086077 A JP 15086077A JP 15086077 A JP15086077 A JP 15086077A JP S5482983 A JPS5482983 A JP S5482983A
Authority
JP
Japan
Prior art keywords
film
source
coated
substrate
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15086077A
Other languages
Japanese (ja)
Inventor
Keiichi Murayama
Katsumi Minazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15086077A priority Critical patent/JPS5482983A/en
Publication of JPS5482983A publication Critical patent/JPS5482983A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain the IGFET in a simple way and with reduction of the number of the photomechanical processes by coating preliminarily the uni-conducting metal on the surface of the reverse conducting layer. The uni-conducting metal is used as the diffusion impurity source when forming the source and drain regions and then used as the electrodes for these regions after formation of the regions.
CONSTITUTION: The gate insulating film, thick SiO2 film 3 and thick poly-crystal Si film 4 containing the impurity are coated on N-type Si substrate 1 with window 5 and 6 drilled. Then Al films 7a∼7b which are thinner than film 3 are coated on substrate 1, and at the same time Al film 7c is coated on remaining film 4. A heat treatment is given in the inactive gas, and P-type source region 8 and P-type drain region 9 are formed within substrate 1 using film 7a and 7b as the impurity sources. At the same time, remaining film 7a and 7b are used as source electrode 70a and drain electrode 70b respectively. Film 7c on film 4 is used as gate electrode 70c. In such way, the production time can be reduced with a simple way of producing.
COPYRIGHT: (C)1979,JPO&Japio
JP15086077A 1977-12-14 1977-12-14 Manufacture of insulating gate type field effect transistor Pending JPS5482983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15086077A JPS5482983A (en) 1977-12-14 1977-12-14 Manufacture of insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15086077A JPS5482983A (en) 1977-12-14 1977-12-14 Manufacture of insulating gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5482983A true JPS5482983A (en) 1979-07-02

Family

ID=15505951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15086077A Pending JPS5482983A (en) 1977-12-14 1977-12-14 Manufacture of insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5482983A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127378A (en) * 1982-01-23 1983-07-29 Canon Inc Manufacture of semiconductor device
JPS603158A (en) * 1983-06-06 1985-01-09 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127378A (en) * 1982-01-23 1983-07-29 Canon Inc Manufacture of semiconductor device
JPH055172B2 (en) * 1982-01-23 1993-01-21 Canon Kk
JPS603158A (en) * 1983-06-06 1985-01-09 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor
JPH0523056B2 (en) * 1983-06-06 1993-03-31 Intaanashonaru Bijinesu Mashiinzu Corp

Similar Documents

Publication Publication Date Title
JPS56134757A (en) Complementary type mos semiconductor device and its manufacture
JPS56115525A (en) Manufacture of semiconductor device
GB1520051A (en) Methods of making semiconductor devices
JPS5482983A (en) Manufacture of insulating gate type field effect transistor
JPS5578574A (en) Manufacture of insulated-gate field-effect transistor
JPS5558570A (en) Manufacture of semiconductor device
JPS6457673A (en) Manufacture of thin film transistor
JPS53129981A (en) Production of semiconductor device
JPS56153769A (en) Manufacture of semiconductor device
JPS54139488A (en) Mos semiconductor element and its manufacture
JPS54106174A (en) Semiconductor device and its manufacture
JPS5565438A (en) Semiconductor substrate treatment
JPS559477A (en) Method of making semiconductor device
JPS54109385A (en) Field effect semiconductor device of high dielectric strength
JPS5376770A (en) Production of insulated gate field effect transistor
JPS5491066A (en) Field effect transistor of insulation gate type
JPS5272162A (en) Production of semiconductor device
JPS5489594A (en) Manufacture for integrated circuit
JPS5423479A (en) Manufacture for field effect transistor of insulation gate type
JPS52138876A (en) Production of semiconductor device
JPS5591878A (en) Manufacture of semiconductor device
JPS5460576A (en) Manufacture of insulating gate type field effect transistor
JPS6481226A (en) Etching method
JPS54129983A (en) Manufacture of semiconductor device
JPS5461881A (en) Production of insulated gate type field effect transistor