JPS5523025A - Production of polycrystal silicon - Google Patents

Production of polycrystal silicon

Info

Publication number
JPS5523025A
JPS5523025A JP9463078A JP9463078A JPS5523025A JP S5523025 A JPS5523025 A JP S5523025A JP 9463078 A JP9463078 A JP 9463078A JP 9463078 A JP9463078 A JP 9463078A JP S5523025 A JPS5523025 A JP S5523025A
Authority
JP
Japan
Prior art keywords
gas
polycrystal silicon
silicon layer
carrier gas
sihcl3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9463078A
Other languages
Japanese (ja)
Inventor
Setsuro Yagyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9463078A priority Critical patent/JPS5523025A/en
Publication of JPS5523025A publication Critical patent/JPS5523025A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain electrically insulated polycrystal silicon by using an Si halide together with H2 gas as carrier gas and by changing the temp. for forming a polycrystal silicon layer in two stages to prevent a reduction in SiO2 film thickness and an increase of pinholes. CONSTITUTION:Using H2 gas as carrier gas an Si halide such as SiHCl3 or SiCl4 is fed onto an SiO2 film covering single crystal silicon in a reactor kept at 1100 deg.C to form a polycrystal silicon layer on the film. While forming the silicon layer, the temp. of the reactor is raised to 1200-1250 deg.C, and SiHCl3, SiCl4 or the like is further fed using H2 gas as carrier gas. EFFECT:Enhanced reproducibility, yield and element performance in manufacture of integrated circuit elements.
JP9463078A 1978-08-04 1978-08-04 Production of polycrystal silicon Pending JPS5523025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9463078A JPS5523025A (en) 1978-08-04 1978-08-04 Production of polycrystal silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9463078A JPS5523025A (en) 1978-08-04 1978-08-04 Production of polycrystal silicon

Publications (1)

Publication Number Publication Date
JPS5523025A true JPS5523025A (en) 1980-02-19

Family

ID=14115573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9463078A Pending JPS5523025A (en) 1978-08-04 1978-08-04 Production of polycrystal silicon

Country Status (1)

Country Link
JP (1) JPS5523025A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994107A (en) * 1986-07-09 1991-02-19 California Institute Of Technology Aerosol reactor production of uniform submicron powders
US5855678A (en) * 1997-04-30 1999-01-05 Sri International Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
US7922814B2 (en) * 2005-11-29 2011-04-12 Chisso Corporation Production process for high purity polycrystal silicon and production apparatus for the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994107A (en) * 1986-07-09 1991-02-19 California Institute Of Technology Aerosol reactor production of uniform submicron powders
US5855678A (en) * 1997-04-30 1999-01-05 Sri International Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
US7922814B2 (en) * 2005-11-29 2011-04-12 Chisso Corporation Production process for high purity polycrystal silicon and production apparatus for the same
US8287645B2 (en) 2005-11-29 2012-10-16 Jnc Corporation Production process for high purity polycrystal silicon and production apparatus for the same

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