JPS5680128A - Manufacture of thin film - Google Patents

Manufacture of thin film

Info

Publication number
JPS5680128A
JPS5680128A JP15858779A JP15858779A JPS5680128A JP S5680128 A JPS5680128 A JP S5680128A JP 15858779 A JP15858779 A JP 15858779A JP 15858779 A JP15858779 A JP 15858779A JP S5680128 A JPS5680128 A JP S5680128A
Authority
JP
Japan
Prior art keywords
thin film
productivity
substrates
yield
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15858779A
Other languages
Japanese (ja)
Other versions
JPS6239533B2 (en
Inventor
Hajime Ichiyanagi
Nobuhiko Fujita
Hiroshi Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15858779A priority Critical patent/JPS5680128A/en
Publication of JPS5680128A publication Critical patent/JPS5680128A/en
Publication of JPS6239533B2 publication Critical patent/JPS6239533B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase the productivity and the yield of raw material gas by juxtaposing two substrates for installation in forming a thin film by a CVD method. CONSTITUTION:Two substrates 6 are juxtaposed and installed on a substrate support base 7 in forming a thin film requiring heavy dimension such as amorphous Si film solar batteries or the like on only one side of the substrate by a CVD method. In this way, the productivity will be increased by eliminating the mask formation to interrupt the thin film formation to an unnecessary side. Furthermore, the yield of raw material gas will be increased as the thin film is not grown on the juxtaposed side.
JP15858779A 1979-12-05 1979-12-05 Manufacture of thin film Granted JPS5680128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15858779A JPS5680128A (en) 1979-12-05 1979-12-05 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15858779A JPS5680128A (en) 1979-12-05 1979-12-05 Manufacture of thin film

Publications (2)

Publication Number Publication Date
JPS5680128A true JPS5680128A (en) 1981-07-01
JPS6239533B2 JPS6239533B2 (en) 1987-08-24

Family

ID=15674943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15858779A Granted JPS5680128A (en) 1979-12-05 1979-12-05 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS5680128A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
US5364481A (en) * 1992-07-24 1994-11-15 Fuji Electric Co., Ltd. Apparatus for manufacturing a thin-film photovoltaic conversion device
EP1546432A1 (en) * 2002-08-27 2005-06-29 Energy Conversion Devices, Inc. High throughput deposition apparatus
JP2017108083A (en) * 2015-12-11 2017-06-15 三菱電機株式会社 Method for manufacturing solar battery
JP2018093200A (en) * 2016-12-05 2018-06-14 エルジー エレクトロニクス インコーポレイティド Method of manufacturing solar cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01112317U (en) * 1988-01-20 1989-07-28

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132268A (en) * 1977-04-22 1978-11-17 Nec Corp Vapor phase epitaxial method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132268A (en) * 1977-04-22 1978-11-17 Nec Corp Vapor phase epitaxial method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPH0468390B2 (en) * 1982-03-29 1992-11-02 Enaajii Konbaajon Debaisesu Inc
US5364481A (en) * 1992-07-24 1994-11-15 Fuji Electric Co., Ltd. Apparatus for manufacturing a thin-film photovoltaic conversion device
EP1546432A1 (en) * 2002-08-27 2005-06-29 Energy Conversion Devices, Inc. High throughput deposition apparatus
EP1546432A4 (en) * 2002-08-27 2012-03-28 Energy Conversion Devices Inc High throughput deposition apparatus
JP2017108083A (en) * 2015-12-11 2017-06-15 三菱電機株式会社 Method for manufacturing solar battery
JP2018093200A (en) * 2016-12-05 2018-06-14 エルジー エレクトロニクス インコーポレイティド Method of manufacturing solar cell

Also Published As

Publication number Publication date
JPS6239533B2 (en) 1987-08-24

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