JPS645011A - Forming method for semiconductor film - Google Patents

Forming method for semiconductor film

Info

Publication number
JPS645011A
JPS645011A JP15984487A JP15984487A JPS645011A JP S645011 A JPS645011 A JP S645011A JP 15984487 A JP15984487 A JP 15984487A JP 15984487 A JP15984487 A JP 15984487A JP S645011 A JPS645011 A JP S645011A
Authority
JP
Japan
Prior art keywords
substrate
radicals
gas
radical
absorbed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15984487A
Other languages
Japanese (ja)
Other versions
JP2550353B2 (en
Inventor
Tsuneo Takahashi
Hitoshi Ishii
Kiyohisa Fujinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62159844A priority Critical patent/JP2550353B2/en
Publication of JPS645011A publication Critical patent/JPS645011A/en
Application granted granted Critical
Publication of JP2550353B2 publication Critical patent/JP2550353B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To grow molecular layers of Ge by exposing a substrate surface to a gas including Ge atoms bonded with both dissociable radicals and undissociable radicals so that the Ge atoms with undissociable radicals are deposited on the substrate surface while the dissociable radicals leave the Ge atoms. CONSTITUTION:On the (100) face of a substrate 1 of, e.g. Si, Ge(C2H5)H2 gas 3 is introduced. As the bonding force between ethyl radical (C2H5 radical) and Ge is large, dissociation does not occur. But the bonding force between Ge and H atom is small, so dissociation occurs at a temperature of 100-300 deg.C, and Ge(C2H5) 4 is absorbed on the substrate 1 surface. At that time, Ge is absorbed on the substrate 1, and ethyl radical is absorbed on the outer side of Ge so as to be a protective radical. After the gas 3 is discharged, the tempera ture of the substrate is raised at 300 deg.C or more, and ethyl radical 5 is dissociat ed to eliminate the ethyl radical 5. Again, the Ge(C2H5)2H2 gas 3 is introduced, and the second semiconductor film is formed.
JP62159844A 1987-06-29 1987-06-29 Semiconductor film forming method Expired - Lifetime JP2550353B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62159844A JP2550353B2 (en) 1987-06-29 1987-06-29 Semiconductor film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159844A JP2550353B2 (en) 1987-06-29 1987-06-29 Semiconductor film forming method

Publications (2)

Publication Number Publication Date
JPS645011A true JPS645011A (en) 1989-01-10
JP2550353B2 JP2550353B2 (en) 1996-11-06

Family

ID=15702472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159844A Expired - Lifetime JP2550353B2 (en) 1987-06-29 1987-06-29 Semiconductor film forming method

Country Status (1)

Country Link
JP (1) JP2550353B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
JP2007227616A (en) * 2006-02-23 2007-09-06 Nec Electronics Corp Film forming apparatus, and its adjusting method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
JP2007227616A (en) * 2006-02-23 2007-09-06 Nec Electronics Corp Film forming apparatus, and its adjusting method

Also Published As

Publication number Publication date
JP2550353B2 (en) 1996-11-06

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term