JPS6450472A - Amorphous semiconductor solar cell - Google Patents
Amorphous semiconductor solar cellInfo
- Publication number
- JPS6450472A JPS6450472A JP62207871A JP20787187A JPS6450472A JP S6450472 A JPS6450472 A JP S6450472A JP 62207871 A JP62207871 A JP 62207871A JP 20787187 A JP20787187 A JP 20787187A JP S6450472 A JPS6450472 A JP S6450472A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- main ingredient
- organic silicate
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 3
- 239000002075 main ingredient Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To eliminate the warpage of a substrate, by forming an insulating film layer on the substrate of a silica film in which a coating agent which contains organic silicate as a main ingredient is cured. CONSTITUTION:An insulating film layer 6, a back face electrode 2, an amorphous semiconductor layer 3, a transparent electrode layer 4 and a protective film layer 5 are sequentially formed on a flexible metal substrate 1, the layer 6 is formed of a silica film in which organic silicate containing as main ingredient organopolysiloxane is cured. The layer 6 is formed by coating the substrate 1 having surface roughness of certain degree directly with a coating agent containing as a main ingredient organic silicate and heating it at 300 deg.C or less. The thus obtained layer 6 obtains a smooth surface by providing a sufficient thickness to bury the fine uneven part of the substrate 1. Thus, the warpage of the substrate can be eliminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207871A JPS6450472A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207871A JPS6450472A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450472A true JPS6450472A (en) | 1989-02-27 |
Family
ID=16546931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62207871A Pending JPS6450472A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450472A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005079405A (en) * | 2003-09-01 | 2005-03-24 | Nippon Steel Corp | Stainless steel foil coated with silica-based inorganic polymer film and its manufacturing method |
JP2007088044A (en) * | 2005-09-20 | 2007-04-05 | Nippon Steel Materials Co Ltd | Coated stainless steel foil and thin film solar cell |
JP2010124003A (en) * | 2010-03-08 | 2010-06-03 | Nippon Steel Corp | Stainless foil cladded with silica-based inorganic polymer film, and silicon thin film solar cell using the same |
-
1987
- 1987-08-20 JP JP62207871A patent/JPS6450472A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005079405A (en) * | 2003-09-01 | 2005-03-24 | Nippon Steel Corp | Stainless steel foil coated with silica-based inorganic polymer film and its manufacturing method |
JP2007088044A (en) * | 2005-09-20 | 2007-04-05 | Nippon Steel Materials Co Ltd | Coated stainless steel foil and thin film solar cell |
JP2010124003A (en) * | 2010-03-08 | 2010-06-03 | Nippon Steel Corp | Stainless foil cladded with silica-based inorganic polymer film, and silicon thin film solar cell using the same |
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