JPS6476730A - Mounting structure of semiconductor element - Google Patents

Mounting structure of semiconductor element

Info

Publication number
JPS6476730A
JPS6476730A JP23231687A JP23231687A JPS6476730A JP S6476730 A JPS6476730 A JP S6476730A JP 23231687 A JP23231687 A JP 23231687A JP 23231687 A JP23231687 A JP 23231687A JP S6476730 A JPS6476730 A JP S6476730A
Authority
JP
Japan
Prior art keywords
agent
silicon oxide
mounting
semiconductor element
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23231687A
Other languages
Japanese (ja)
Other versions
JPH0752738B2 (en
Inventor
Yoshifumi Moriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62232316A priority Critical patent/JPH0752738B2/en
Publication of JPS6476730A publication Critical patent/JPS6476730A/en
Publication of JPH0752738B2 publication Critical patent/JPH0752738B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Die Bonding (AREA)

Abstract

PURPOSE:To alleviate a thermal stress with a mounting agent and to realize mounting by a simple work by forming the agent of a silicon oxide film forming agent in the mounting structure of a semiconductor element. CONSTITUTION:The surface of a silicon substrate 1 formed with a silicon oxide film 2 having 0.5-1mum thick is coated with a silicon oxide film forming agent 5,, and a semiconductor element 3 formed with a predetermined element function unit 4 is placed at a predetermined position on a main surface. After the agent 5 is placed on the element, it is cured at 200 deg.C or higher to modify the quality of the silicon oxide, and the element 3 is secured to the substrate 1. Accordingly, the difference of the thermal expansion coefficients of the substrate 1, the element 3, and the mounting agent is alleviated, and a distortion stress generated due to the difference of the coefficients can be suppressed to an extremely small value.
JP62232316A 1987-09-18 1987-09-18 Mounting method of semiconductor element Expired - Lifetime JPH0752738B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232316A JPH0752738B2 (en) 1987-09-18 1987-09-18 Mounting method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232316A JPH0752738B2 (en) 1987-09-18 1987-09-18 Mounting method of semiconductor element

Publications (2)

Publication Number Publication Date
JPS6476730A true JPS6476730A (en) 1989-03-22
JPH0752738B2 JPH0752738B2 (en) 1995-06-05

Family

ID=16937292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232316A Expired - Lifetime JPH0752738B2 (en) 1987-09-18 1987-09-18 Mounting method of semiconductor element

Country Status (1)

Country Link
JP (1) JPH0752738B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0623955A2 (en) * 1993-05-04 1994-11-09 Motorola, Inc. Semiconductor chip module
WO2010001727A1 (en) 2008-06-30 2010-01-07 株式会社Ihi Laser annealing device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254638A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Glass-ceramic substrate for mounting semiconductor device
JPS613436A (en) * 1984-06-18 1986-01-09 Nec Corp Manufacture of package for mounting semiconductor element
JPS6155847A (en) * 1984-08-28 1986-03-20 Nec Corp Fluorescent character display tube
JPS62173725A (en) * 1986-01-27 1987-07-30 Nippon Telegr & Teleph Corp <Ntt> Formation of glass film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254638A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Glass-ceramic substrate for mounting semiconductor device
JPS613436A (en) * 1984-06-18 1986-01-09 Nec Corp Manufacture of package for mounting semiconductor element
JPS6155847A (en) * 1984-08-28 1986-03-20 Nec Corp Fluorescent character display tube
JPS62173725A (en) * 1986-01-27 1987-07-30 Nippon Telegr & Teleph Corp <Ntt> Formation of glass film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0623955A2 (en) * 1993-05-04 1994-11-09 Motorola, Inc. Semiconductor chip module
EP0623955A3 (en) * 1993-05-04 1995-04-26 Motorola Inc Semiconductor chip module.
WO2010001727A1 (en) 2008-06-30 2010-01-07 株式会社Ihi Laser annealing device

Also Published As

Publication number Publication date
JPH0752738B2 (en) 1995-06-05

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