JPS5364463A - Fixing tray of semiconductor wafers - Google Patents
Fixing tray of semiconductor wafersInfo
- Publication number
- JPS5364463A JPS5364463A JP13955376A JP13955376A JPS5364463A JP S5364463 A JPS5364463 A JP S5364463A JP 13955376 A JP13955376 A JP 13955376A JP 13955376 A JP13955376 A JP 13955376A JP S5364463 A JPS5364463 A JP S5364463A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafers
- fixing tray
- wafer
- fixing
- polyurethane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To make possible firm fixing of a wafer by securing and forming a thin film such as of polyurethane or other having a plurality of hole parts opening to the placement side of the semiconductor wafer and flat surface parts onto the plane surface of the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13955376A JPS5364463A (en) | 1976-11-22 | 1976-11-22 | Fixing tray of semiconductor wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13955376A JPS5364463A (en) | 1976-11-22 | 1976-11-22 | Fixing tray of semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5364463A true JPS5364463A (en) | 1978-06-08 |
JPS542537B2 JPS542537B2 (en) | 1979-02-08 |
Family
ID=15247933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13955376A Granted JPS5364463A (en) | 1976-11-22 | 1976-11-22 | Fixing tray of semiconductor wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5364463A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63120764U (en) * | 1987-01-29 | 1988-08-04 | ||
JPH04180650A (en) * | 1990-11-15 | 1992-06-26 | Nec Kyushu Ltd | Tape for full-cut dicing |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6391475U (en) * | 1986-12-04 | 1988-06-13 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS493320A (en) * | 1972-05-02 | 1974-01-12 | ||
JPS5091460U (en) * | 1973-12-24 | 1975-08-01 | ||
JPS50134574A (en) * | 1974-04-01 | 1975-10-24 |
-
1976
- 1976-11-22 JP JP13955376A patent/JPS5364463A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS493320A (en) * | 1972-05-02 | 1974-01-12 | ||
JPS5091460U (en) * | 1973-12-24 | 1975-08-01 | ||
JPS50134574A (en) * | 1974-04-01 | 1975-10-24 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63120764U (en) * | 1987-01-29 | 1988-08-04 | ||
JPH04180650A (en) * | 1990-11-15 | 1992-06-26 | Nec Kyushu Ltd | Tape for full-cut dicing |
Also Published As
Publication number | Publication date |
---|---|
JPS542537B2 (en) | 1979-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1091351B (en) | PROCEDURE FOR FORMING AN EPITAXIAL LAYER ON THE SURFACE OF A SUBSTRATE, PARTICULARLY FOR SEMICONDUCTORS | |
JPS543480A (en) | Manufacture of semiconductor device | |
IT8026866A0 (en) | SYSTEM FOR COATING THIN SEMICONDUCTOR SUBSTRATES (WAFERS). | |
DE69132826T2 (en) | Heater for semiconductor wafers or substrates | |
JPS5293285A (en) | Structure for semiconductor device | |
IT7868866A0 (en) | PROCEDURE FOR THE DEPOSIT OF CRYSTALLINE SILICON IN A THIN FILM ON A GRAPHITED SUBSTRATE | |
GB1542084A (en) | Thin silicon semiconductor devices | |
JPS5364463A (en) | Fixing tray of semiconductor wafers | |
JPS52156580A (en) | Semiconductor integrated circuit device and its production | |
JPS6450439A (en) | Manufacture of semiconductor device | |
JPS5331983A (en) | Production of semiconductor substrates | |
JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
JPS52156581A (en) | Semiconductor device | |
JPS5325350A (en) | Dicing method of semiconductor substrates | |
JPS5419681A (en) | Dielectric isolating substrate and production of the same | |
JPS53105989A (en) | Semiconductor device | |
JPS5336180A (en) | Production of semiconductor device | |
GB1540675A (en) | Substrate for epitaxial deposition of silicon | |
JPS5317286A (en) | Production of semiconductor device | |
JPS5333579A (en) | Semiconductor device production | |
JPS53117975A (en) | Etching method of semiconductor substrates | |
JPS5351981A (en) | Manufacture for semiconductor device | |
JPS5367353A (en) | Manufacturing device of semiconductor crystal | |
JPS5338968A (en) | Spinel crystal for semiconductor substrate | |
JPS5389656A (en) | Production of semiconductor device |