JPH04180650A - Tape for full-cut dicing - Google Patents
Tape for full-cut dicingInfo
- Publication number
- JPH04180650A JPH04180650A JP2309692A JP30969290A JPH04180650A JP H04180650 A JPH04180650 A JP H04180650A JP 2309692 A JP2309692 A JP 2309692A JP 30969290 A JP30969290 A JP 30969290A JP H04180650 A JPH04180650 A JP H04180650A
- Authority
- JP
- Japan
- Prior art keywords
- tape
- full
- cut dicing
- wafers
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000000737 periodic effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 3
- 239000007767 bonding agent Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はフルカットダイシング用テープに関し、特にウ
ェーハからIC個片に切断する工程で使用するフルカッ
トダイシング用テープに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a full-cut dicing tape, and more particularly to a full-cut dicing tape used in the process of cutting a wafer into individual IC pieces.
従来のウェーハからIC個片に切断する工程で使用する
フルカットダイシング用テープは、第2図(a)、(b
)に示す様に、テープ3の接着剤14の塗布面を上に向
け、リング1及びウェーハ2を接着剤14により接着し
ていた。The full-cut dicing tape used in the conventional process of cutting a wafer into individual IC pieces is shown in Figures 2 (a) and (b).
), the ring 1 and wafer 2 were bonded together with the adhesive 14 with the surface of the tape 3 coated with the adhesive 14 facing upward.
上述した従来のフルカットダイシング用テープは接着剤
により接着を行なう為、1.使用後のリングに接着剤が
残る為リングの定期洗浄が必要である。2.フルカット
ダイシング時、接着剤tで切断する為、グイサーブレー
ドの寿命が極度に低下するという欠点がある。The above-mentioned conventional full-cut dicing tape uses an adhesive to adhere, so 1. Because adhesive remains on the ring after use, it is necessary to clean the ring regularly. 2. During full-cut dicing, cutting is performed using adhesive T, which has the disadvantage that the life of the Guiser blade is extremely shortened.
本発明の目的は、リングの定期洗浄の必要がなく、グイ
サーブレードの寿命の長いフルカットダイシング用テー
プを提供することにある。An object of the present invention is to provide a full-cut dicing tape that does not require periodic cleaning of the ring and has a long lifespan for the gaucer blade.
本発明は、ウェーハからIC個片に切断する工程で使用
するフルカットダイシング用テープにおいて、該テープ
表面に多数の微細な凹部を設け、該凹部を減圧すること
により前記ウェーハを吸引する。The present invention provides a full-cut dicing tape used in the process of cutting a wafer into individual IC pieces, with a large number of minute recesses provided on the surface of the tape, and the wafer is sucked by reducing the pressure in the recesses.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図(a)、(b)は本発明の一実施例の断面図及び
A部の部分拡大断面図である。FIGS. 1(a) and 1(b) are a sectional view of an embodiment of the present invention and a partially enlarged sectional view of part A.
第1図(a)、(b)に示す様に、フルカットダイシン
グ用テープ3の表面には接着剤を用いず、多数の微細な
凹部4が設けられている。As shown in FIGS. 1(a) and 1(b), a large number of fine recesses 4 are provided on the surface of the full-cut dicing tape 3 without using an adhesive.
フルカットダイシング用テープ3とリング1の接着及び
フルカットダイシング用テープ3とウェーハ2の接着は
、減圧中で密着させ、大気中に持ち出す事により、テー
プ3表面の凹部の圧力と大気圧の差圧により行なわれる
。To bond the full-cut dicing tape 3 and the ring 1 and to bond the full-cut dicing tape 3 and the wafer 2, the difference between the pressure in the recess on the surface of the tape 3 and the atmospheric pressure is achieved by bringing them into close contact under reduced pressure and then taking them out into the atmosphere. It is done by pressure.
以上説明したように本発明はテープの表面に多数の微細
な凹部を設け、この凹部を減圧することにより、1.リ
ングへの接着剤の付着がないのでリングの洗浄が不要で
ある。2.フルカットダイシング時、接着剤を切断する
必要が′ない事により、ブレード寿命を延ばす事ができ
る効果がある。As explained above, the present invention provides a number of fine recesses on the surface of the tape, and by reducing the pressure in the recesses, 1. Since there is no adhesive on the ring, there is no need to clean the ring. 2. There is no need to cut the adhesive during full-cut dicing, which has the effect of extending the life of the blade.
第1図(a)、(b)は本発明の一実施例の断面図及び
A部の部分拡大断面図、第2図(a)。
(b)は従来のフルカットダイシング用テープの一例の
断面図及びB部の部分拡大断面図である。
1・・・リング、2・・・ウェーハ、3・・・テープ、
4・・・凹部、5・・・切断されたIC個片、14・・
・接着剤。FIGS. 1(a) and 1(b) are a sectional view of an embodiment of the present invention, a partially enlarged sectional view of part A, and FIG. 2(a). (b) is a cross-sectional view of an example of a conventional full-cut dicing tape and a partially enlarged cross-sectional view of part B. 1...Ring, 2...Wafer, 3...Tape,
4... Concavity, 5... Cut IC pieces, 14...
·glue.
Claims (1)
カットダイシング用テープにおいて、該テープ表面に多
数の微細な凹部を設け、該凹部を減圧することにより前
記ウェーハを吸引することを特徴とするフルカットダイ
シング用テープ。A full-cut dicing tape used in the process of cutting a wafer into individual IC pieces, characterized in that a large number of minute recesses are provided on the surface of the tape, and the wafer is sucked by reducing the pressure in the recesses. Dicing tape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2309692A JPH04180650A (en) | 1990-11-15 | 1990-11-15 | Tape for full-cut dicing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2309692A JPH04180650A (en) | 1990-11-15 | 1990-11-15 | Tape for full-cut dicing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04180650A true JPH04180650A (en) | 1992-06-26 |
Family
ID=17996136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2309692A Pending JPH04180650A (en) | 1990-11-15 | 1990-11-15 | Tape for full-cut dicing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04180650A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019021808A (en) * | 2017-07-19 | 2019-02-07 | 株式会社ディスコ | Wafer processing method |
CN112309906A (en) * | 2019-08-01 | 2021-02-02 | 株式会社迪思科 | Method of processing substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134574A (en) * | 1974-04-01 | 1975-10-24 | ||
JPS5364463A (en) * | 1976-11-22 | 1978-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Fixing tray of semiconductor wafers |
-
1990
- 1990-11-15 JP JP2309692A patent/JPH04180650A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134574A (en) * | 1974-04-01 | 1975-10-24 | ||
JPS5364463A (en) * | 1976-11-22 | 1978-06-08 | Nippon Telegr & Teleph Corp <Ntt> | Fixing tray of semiconductor wafers |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019021808A (en) * | 2017-07-19 | 2019-02-07 | 株式会社ディスコ | Wafer processing method |
CN112309906A (en) * | 2019-08-01 | 2021-02-02 | 株式会社迪思科 | Method of processing substrate |
KR20210015716A (en) * | 2019-08-01 | 2021-02-10 | 가부시기가이샤 디스코 | Method of processing a substrate |
JP2021027336A (en) * | 2019-08-01 | 2021-02-22 | 株式会社ディスコ | Processing method of substrate |
US11823941B2 (en) | 2019-08-01 | 2023-11-21 | Disco Corporation | Method of processing a substrate |
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