GB2000640A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2000640A
GB2000640A GB7828267A GB7828267A GB2000640A GB 2000640 A GB2000640 A GB 2000640A GB 7828267 A GB7828267 A GB 7828267A GB 7828267 A GB7828267 A GB 7828267A GB 2000640 A GB2000640 A GB 2000640A
Authority
GB
United Kingdom
Prior art keywords
main surface
conductivity type
extends along
type resistor
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7828267A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7662077A external-priority patent/JPS5412575A/en
Priority claimed from JP7646477A external-priority patent/JPS5412280A/en
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2000640A publication Critical patent/GB2000640A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Details Of Resistors (AREA)

Abstract

A P-conductivity type resistor layer 12 is formed in the main surface of a silicon substrate 11, and extends along a crystal axis of [001] where the main surface is a crystal face of (110), or else it extends along a [010] or [001] axis in the case of a (100) face main surface. It has been found that the resistance value of a P-conductivity type resistor layer of such orientation is less affected than other orientations in the same plane by the thermal stresses induced in the layer by the shrinkage of a plastics resin envelope 18 during the moulding thereof. <IMAGE>
GB7828267A 1977-06-29 1978-06-29 Semiconductor device Withdrawn GB2000640A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7662077A JPS5412575A (en) 1977-06-29 1977-06-29 Semiconductor device
JP7646477A JPS5412280A (en) 1977-06-29 1977-06-29 Semiconductor device

Publications (1)

Publication Number Publication Date
GB2000640A true GB2000640A (en) 1979-01-10

Family

ID=26417613

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7828267A Withdrawn GB2000640A (en) 1977-06-29 1978-06-29 Semiconductor device

Country Status (3)

Country Link
DE (1) DE2828608B2 (en)
FR (1) FR2396413A1 (en)
GB (1) GB2000640A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035331A2 (en) * 1980-02-29 1981-09-09 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device
EP0174438A1 (en) * 1984-05-29 1986-03-19 Kabushiki Kaisha Meidensha Semiconductor switching device with reduced defect density
EP0197955A1 (en) * 1984-10-18 1986-10-22 Motorola Inc Method for resistor trimming by metal migration.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035331A2 (en) * 1980-02-29 1981-09-09 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device
EP0035331A3 (en) * 1980-02-29 1982-09-29 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device
EP0174438A1 (en) * 1984-05-29 1986-03-19 Kabushiki Kaisha Meidensha Semiconductor switching device with reduced defect density
US4667215A (en) * 1984-05-29 1987-05-19 Kabushiki Kaisha Meidensha Semiconductor device
EP0197955A1 (en) * 1984-10-18 1986-10-22 Motorola Inc Method for resistor trimming by metal migration.
EP0197955A4 (en) * 1984-10-18 1987-01-10 Motorola Inc Method for resistor trimming by metal migration.

Also Published As

Publication number Publication date
FR2396413B1 (en) 1983-01-14
DE2828608A1 (en) 1979-01-04
FR2396413A1 (en) 1979-01-26
DE2828608B2 (en) 1981-02-05

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)