JPS5365066A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5365066A
JPS5365066A JP14086276A JP14086276A JPS5365066A JP S5365066 A JPS5365066 A JP S5365066A JP 14086276 A JP14086276 A JP 14086276A JP 14086276 A JP14086276 A JP 14086276A JP S5365066 A JPS5365066 A JP S5365066A
Authority
JP
Japan
Prior art keywords
film
semiconductor
impurities
deterioration
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14086276A
Other languages
Japanese (ja)
Inventor
Toshio Oota
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP14086276A priority Critical patent/JPS5365066A/en
Publication of JPS5365066A publication Critical patent/JPS5365066A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the deterioration by impurities by protecting an element surface with a SixNyOx thin-film or the compound film of this film and other insulation film and sealing the element in a plastic case.
COPYRIGHT: (C)1978,JPO&Japio
JP14086276A 1976-11-22 1976-11-22 Semiconductor device Pending JPS5365066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14086276A JPS5365066A (en) 1976-11-22 1976-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14086276A JPS5365066A (en) 1976-11-22 1976-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5365066A true JPS5365066A (en) 1978-06-10

Family

ID=15278461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14086276A Pending JPS5365066A (en) 1976-11-22 1976-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365066A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163679A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Semiconductor device
JPS5587442A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56125859A (en) * 1980-03-06 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS58118273A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Heat-sensitive recording head
JPS6199328A (en) * 1984-10-16 1986-05-17 Oki Electric Ind Co Ltd Formation of diffusion protective film
JPS61158475A (en) * 1984-12-31 1986-07-18 Konishiroku Photo Ind Co Ltd Thermal recording head
JPS61222228A (en) * 1985-03-28 1986-10-02 Matsushita Electronics Corp Light-receiving element
JPS61297159A (en) * 1985-06-27 1986-12-27 Kyocera Corp Thermal head and manufacture thereof
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
JPH07273031A (en) * 1994-11-16 1995-10-20 Agency Of Ind Science & Technol Manufacture of silicon substrate
JPH104061A (en) * 1997-03-13 1998-01-06 Agency Of Ind Science & Technol Method of manufacturing silicon base

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163679A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Semiconductor device
JPS5587442A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56125859A (en) * 1980-03-06 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS58118273A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Heat-sensitive recording head
JPH0232988B2 (en) * 1982-01-06 1990-07-24 Hitachi Ltd
JPS6199328A (en) * 1984-10-16 1986-05-17 Oki Electric Ind Co Ltd Formation of diffusion protective film
JPS61158475A (en) * 1984-12-31 1986-07-18 Konishiroku Photo Ind Co Ltd Thermal recording head
JPS61222228A (en) * 1985-03-28 1986-10-02 Matsushita Electronics Corp Light-receiving element
JPS61297159A (en) * 1985-06-27 1986-12-27 Kyocera Corp Thermal head and manufacture thereof
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
JPH07273031A (en) * 1994-11-16 1995-10-20 Agency Of Ind Science & Technol Manufacture of silicon substrate
JPH104061A (en) * 1997-03-13 1998-01-06 Agency Of Ind Science & Technol Method of manufacturing silicon base

Similar Documents

Publication Publication Date Title
JPS51144183A (en) Semiconductor element containing surface protection film
JPS5299786A (en) Mos integrated circuit
JPS5293285A (en) Structure for semiconductor device
JPS5743438A (en) Semiconductor device and manufacture thereof
JPS5393781A (en) Semiconductor device
JPS51127682A (en) Manufacturing process of semiconductor device
FR2698722B1 (en) Device with a III-V group semiconductor compound of the type of a transistor with high electronic mobility.
JPS51114886A (en) Photocoupling semiconductor device and its manufacturing process
JPH03145129A (en) Semiconductor device and manufacture thereof
JPS5315763A (en) Resin sealed type semiconductor device
JPS5355986A (en) Manufacture of semiconductor device
AU504667B2 (en) Semiconductor device with passivating layer
JPS5338278A (en) Semiconductor device
JPS5429984A (en) Protector for semiconductor device
JPS53114690A (en) Thin film strain gauge convertor
JPS5378788A (en) Temperature-compensation-type constant voltage element
JPS5228280A (en) Semiconductor device
JPS5339061A (en) Production of semiconductor device
JPS5294381A (en) Biaxially stretched polypropylene composite film
JPS5356972A (en) Mesa type semiconductor device
JPS52156580A (en) Semiconductor integrated circuit device and its production
JPS5394881A (en) Integrated circuit device
JPS53114685A (en) Manufacture for semiconductor device
JPS52117551A (en) Semiconductor device
JPS5247673A (en) Process for production of silicon crystal film