JPS5365066A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5365066A
JPS5365066A JP14086276A JP14086276A JPS5365066A JP S5365066 A JPS5365066 A JP S5365066A JP 14086276 A JP14086276 A JP 14086276A JP 14086276 A JP14086276 A JP 14086276A JP S5365066 A JPS5365066 A JP S5365066A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
impurities
deterioration
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14086276A
Other languages
Japanese (ja)
Inventor
Toshio Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14086276A priority Critical patent/JPS5365066A/en
Publication of JPS5365066A publication Critical patent/JPS5365066A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the deterioration by impurities by protecting an element surface with a SixNyOx thin-film or the compound film of this film and other insulation film and sealing the element in a plastic case.
COPYRIGHT: (C)1978,JPO&Japio
JP14086276A 1976-11-22 1976-11-22 Semiconductor device Pending JPS5365066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14086276A JPS5365066A (en) 1976-11-22 1976-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14086276A JPS5365066A (en) 1976-11-22 1976-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5365066A true JPS5365066A (en) 1978-06-10

Family

ID=15278461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14086276A Pending JPS5365066A (en) 1976-11-22 1976-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365066A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163679A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Semiconductor device
JPS5587442A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56125859A (en) * 1980-03-06 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS58118273A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Heat-sensitive recording head
JPS6199328A (en) * 1984-10-16 1986-05-17 Oki Electric Ind Co Ltd Formation of diffusion protective film
JPS61158475A (en) * 1984-12-31 1986-07-18 Konishiroku Photo Ind Co Ltd Thermal recording head
JPS61222228A (en) * 1985-03-28 1986-10-02 Matsushita Electronics Corp Light-receiving element
JPS61297159A (en) * 1985-06-27 1986-12-27 Kyocera Corp Thermal head and manufacture thereof
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
JPH07273031A (en) * 1994-11-16 1995-10-20 Agency Of Ind Science & Technol Manufacture of silicon substrate
JPH104061A (en) * 1997-03-13 1998-01-06 Agency Of Ind Science & Technol Method of manufacturing silicon base

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163679A (en) * 1978-06-15 1979-12-26 Fujitsu Ltd Semiconductor device
JPS5587442A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56125859A (en) * 1980-03-06 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS58118273A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Heat-sensitive recording head
JPH0232988B2 (en) * 1982-01-06 1990-07-24 Hitachi Ltd
JPS6199328A (en) * 1984-10-16 1986-05-17 Oki Electric Ind Co Ltd Formation of diffusion protective film
JPS61158475A (en) * 1984-12-31 1986-07-18 Konishiroku Photo Ind Co Ltd Thermal recording head
JPS61222228A (en) * 1985-03-28 1986-10-02 Matsushita Electronics Corp Light-receiving element
JPS61297159A (en) * 1985-06-27 1986-12-27 Kyocera Corp Thermal head and manufacture thereof
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
JPH07273031A (en) * 1994-11-16 1995-10-20 Agency Of Ind Science & Technol Manufacture of silicon substrate
JPH104061A (en) * 1997-03-13 1998-01-06 Agency Of Ind Science & Technol Method of manufacturing silicon base

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