JPS5365066A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5365066A JPS5365066A JP14086276A JP14086276A JPS5365066A JP S5365066 A JPS5365066 A JP S5365066A JP 14086276 A JP14086276 A JP 14086276A JP 14086276 A JP14086276 A JP 14086276A JP S5365066 A JPS5365066 A JP S5365066A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- impurities
- deterioration
- protecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent the deterioration by impurities by protecting an element surface with a SixNyOx thin-film or the compound film of this film and other insulation film and sealing the element in a plastic case.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14086276A JPS5365066A (en) | 1976-11-22 | 1976-11-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14086276A JPS5365066A (en) | 1976-11-22 | 1976-11-22 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5365066A true JPS5365066A (en) | 1978-06-10 |
Family
ID=15278461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14086276A Pending JPS5365066A (en) | 1976-11-22 | 1976-11-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5365066A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54163679A (en) * | 1978-06-15 | 1979-12-26 | Fujitsu Ltd | Semiconductor device |
JPS5587442A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS56125859A (en) * | 1980-03-06 | 1981-10-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58118273A (en) * | 1982-01-06 | 1983-07-14 | Hitachi Ltd | Heat-sensitive recording head |
JPS6199328A (en) * | 1984-10-16 | 1986-05-17 | Oki Electric Ind Co Ltd | Formation of diffusion protective film |
JPS61158475A (en) * | 1984-12-31 | 1986-07-18 | Konishiroku Photo Ind Co Ltd | Thermal recording head |
JPS61222228A (en) * | 1985-03-28 | 1986-10-02 | Matsushita Electronics Corp | Light-receiving element |
JPS61297159A (en) * | 1985-06-27 | 1986-12-27 | Kyocera Corp | Thermal head and manufacture thereof |
US5065222A (en) * | 1987-11-11 | 1991-11-12 | Seiko Instruments Inc. | Semiconductor device having two-layered passivation film |
JPH07273031A (en) * | 1994-11-16 | 1995-10-20 | Agency Of Ind Science & Technol | Manufacture of silicon substrate |
JPH104061A (en) * | 1997-03-13 | 1998-01-06 | Agency Of Ind Science & Technol | Method of manufacturing silicon base |
-
1976
- 1976-11-22 JP JP14086276A patent/JPS5365066A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54163679A (en) * | 1978-06-15 | 1979-12-26 | Fujitsu Ltd | Semiconductor device |
JPS5587442A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS56125859A (en) * | 1980-03-06 | 1981-10-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58118273A (en) * | 1982-01-06 | 1983-07-14 | Hitachi Ltd | Heat-sensitive recording head |
JPH0232988B2 (en) * | 1982-01-06 | 1990-07-24 | Hitachi Ltd | |
JPS6199328A (en) * | 1984-10-16 | 1986-05-17 | Oki Electric Ind Co Ltd | Formation of diffusion protective film |
JPS61158475A (en) * | 1984-12-31 | 1986-07-18 | Konishiroku Photo Ind Co Ltd | Thermal recording head |
JPS61222228A (en) * | 1985-03-28 | 1986-10-02 | Matsushita Electronics Corp | Light-receiving element |
JPS61297159A (en) * | 1985-06-27 | 1986-12-27 | Kyocera Corp | Thermal head and manufacture thereof |
US5065222A (en) * | 1987-11-11 | 1991-11-12 | Seiko Instruments Inc. | Semiconductor device having two-layered passivation film |
JPH07273031A (en) * | 1994-11-16 | 1995-10-20 | Agency Of Ind Science & Technol | Manufacture of silicon substrate |
JPH104061A (en) * | 1997-03-13 | 1998-01-06 | Agency Of Ind Science & Technol | Method of manufacturing silicon base |
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