JPS58118273A - Heat-sensitive recording head - Google Patents
Heat-sensitive recording headInfo
- Publication number
- JPS58118273A JPS58118273A JP57000301A JP30182A JPS58118273A JP S58118273 A JPS58118273 A JP S58118273A JP 57000301 A JP57000301 A JP 57000301A JP 30182 A JP30182 A JP 30182A JP S58118273 A JPS58118273 A JP S58118273A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording head
- wear
- gas
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract 2
- 238000005299 abrasion Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 229910018557 Si O Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 4
- 208000035874 Excoriation Diseases 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Electronic Switches (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、感熱記録ヘッドに係り、特に発熱抵抗体を保
験する耐摩耗層保論陽に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermal recording head, and more particularly to a wear-resistant layer for protecting a heating resistor.
従来薄膜形感熱記録ヘッドは、金属電極お工び発熱抵抗
体上に酸化タンタル（Ｔ−ら）、皺化シリコン（Ｓａｃ
）轡の耐摩耗層を設けている。Conventional thin-film thermal recording heads have been manufactured using tantalum oxide (T-ra) and wrinkled silicon (Sac) on metal electrodes and heat-generating resistors.
) Has a wear-resistant layer on the shoe.
しかし、７’ａｍ（％は硬度が小さくて耐摩耗性が劣る
ため、膜厚を厚くして実用する必要かあり、ＳｔＣは化
学的に不安定で例は感熱記録紙上の感熱物置と反応を生
じ耐摩耗性を看しく劣化させる。However, since 7'am (%) has low hardness and poor abrasion resistance, it is necessary to make the film thicker for practical use. This results in a noticeable deterioration of wear resistance.
一方、窒化シリコン（５ｋｓＮｈ ）は硬度か大きく化
学的に安定であるが、薄膜状では躾の内か応力が大きく
亀裂を生じやすい欠点かあった。On the other hand, silicon nitride (5ksNh) has a high hardness and is chemically stable, but in the form of a thin film, it has the disadvantage of being subject to large stress and being prone to cracking.
これら三材料のヌープ硬度（耐摩耗性の指標となる）と
、化合物の生成熱１＠（安定性の指標となる）を表に示
す。The Knoop hardness of these three materials (an indicator of wear resistance) and the heat of formation of the compound 1@ (an indicator of stability) are shown in the table.
ｒ）ζはＮｉが−４９９，９であるため化学的に安定で
あるか、その硬度はＳ＞、７１１１４の１７２以下であ
る。またＳａｃは硬度においては秀れた材料であるか、
Ｊｏか一２６％７と余り大きくなく化学的に不安定であ
る。一方、Ｓｉ、八は＆友、階０扛良好であるが、農の
内部応力が１００シイ、以上と大きな圧縮応力を持って
いる。r) ζ is chemically stable because Ni is -499.9, or its hardness is 172 or less of S>, 71114. Also, is Sac an excellent material in terms of hardness?
It is not very large at 26%7 and is chemically unstable. On the other hand, Si, 8, and 0 are good, but have a large compressive stress with an internal stress of 100 or more.
本発明の目的は、上記した従来技術の欠点のないｈａか
太きくて耐摩耗性に秀れ、化学的安定性か艮く、η・つ
膜の内部応力が小さくて耐亀裂性の艮好な耐摩耗〜を提
供することにある。The object of the present invention is to provide a film that is thick, has excellent abrasion resistance, has excellent chemical stability, has low internal stress, and has excellent crack resistance, without the drawbacks of the prior art described above. The aim is to provide excellent wear resistance.
そして本発明は耐摩耗層をシリコンオキシナイトライド
（５Ｎ−０−Ｎ ）とすることで達成される。The present invention is achieved by using silicon oxynitride (5N-0-N) as the wear-resistant layer.
シリコンオキシナイトライドは、酸素含有量と窒素含有
ｉｔ変えることに工ｔ）、ｓ１０！に近い特性を有する
ものから５＋、ＡＩ４に近い特性含有する本のまで変化
で変わり、その特性を）１９ｒＩＩｉの値に選択できる
とと′を特徴としている。Silicon oxynitride can be used to change the oxygen content and nitrogen content (it), s10! It varies from books with characteristics close to 5+ to books with characteristics close to AI4, and the characteristics can be selected to a value of )19rIIi.
シリコンナイトライドを５１ｏｘｓｙで表わした場合、
へｙの値が夫々へ２〜１．８５、ζ３〜１．５の範曲の
本のが好ましい。そして、５Ｋ（ｋＮｙｆｇは通常のド
ライプロセスで形成される。When silicon nitride is expressed as 51oxsy,
It is preferable to use a range of curves in which the value of y is 2 to 1.85 and ζ3 to 1.5, respectively. The 5K (kNyfg) is formed by a normal dry process.
以下、本発明を実施例に工す詳細に説明する。Hereinafter, the present invention will be explained in detail using examples.
実施例１
第１図は感熱記録ヘッドの断面である。第１図中、１は
グレーズ層を設けたアルミナ基板、２はＮさＱ、１５μ
講厚のＣｔ−５＋−Ｕの三元合金ニジなる発熱抵抗体層
、５は厚さ１μｍのＡＩ−極、４は厚さ４ｐｍのＳ ｉ
ＵｘＮｙ （Ｑ、 ２（ｚ（１，８５，Ｑ、 Ｋｙ＜
１．３）層である。Example 1 FIG. 1 is a cross section of a thermal recording head. In Figure 1, 1 is an alumina substrate with a glaze layer, 2 is NQ, 15μ
A heating resistor layer made of a ternary alloy Ct-5+-U of Koatsu, 5 is an AI-electrode with a thickness of 1 μm, and 4 is an Si with a thickness of 4 pm.
UxNy (Q, 2(z(1,85,Q, Ky<
1.3) It is a layer.
図中の４〜６は、いずれもプラズマＣＶＣ−ｅ法で行な
った。即ち反応性カスとして、５１Ｈ４ｅＮ１１ｓ Ｉ
へ０ガス、キャリアーガスとしてヘガスを導入し、放電
々力１、Ｏｇ゛で成膜した。Items 4 to 6 in the figure were all performed using the plasma CVC-e method. That is, as a reactive residue, 51H4eN11s I
A gas was introduced as a carrier gas, and a film was formed at a discharge force of 1.0 g.
プラズーｒｃＶＤ法で形成した５ｓＯｘＮｙ＠０）ｓｔ
ｙ −と、膜の内部応力の関係を第２図に、薄膜の硬度
との関係を第３図に示した。ｆｊｐＪ２図で曲線５はＳ
１０ｘＮｙにおいてｘＷＬをζ５〜代７としてｙ値を
変化させた場合、曲線６は５ｓＵｘＮｙでｙ塩をｑ６〜
−８一定として、ｘ ＋ｖｔ ｔ−変化させた機会の内
部応力変化を示す曲線である。5sOxNy@0)st formed by Prazu rcVD method
The relationship between y- and the internal stress of the film is shown in FIG. 2, and the relationship between the hardness of the thin film and the hardness of the thin film is shown in FIG. In the fjpJ2 diagram, curve 5 is S
When changing the y value with xWL set to ζ5~7 at 10xNy, curve 6 becomes 5sUxNy and the y salt is set to q6~
-8 is a constant curve showing the internal stress change when x + vt t- is varied.
これから５１０ｘＮｙ 展の内部応力はｙ値が増加する
ほど圧動圧力か大きくなり、２１１Ｌに対しては１６〜
３０”／、−の圧動圧力で余）変化かない。From now on, the internal stress of 510xNy expansion becomes larger as the y value increases, and for 211L, 16~
There is no change at a pressure of 30"/-.
また、第５図で曲線７は５ＩＵｘＮｙで１ｌｉｔｔＱ、
５〜０．７としてｙ１μを変化させた鵬合曲融８は５Ｉ
ＵｘＮｙでｙｋ會ｒ１．６〜０．８としてＸ憧會灸化さ
せたときのヌープ硬度を示している。９５図から、Ｓ
Ｉ ＯｘＮ ｙ膜の硬度はＸ値か増加するほど減少し、
ｙ値か増加するほど増大することかわかる。Also, in Fig. 5, curve 7 is 5IUxNy and 1litQ,
5I
The Knoop hardness is shown when the X-ray moxibustion is performed with UxNy and yk ratio r1.6 to 0.8. From figure 95, S
The hardness of the I OxN y film decreases as the X value increases,
It can be seen that the value increases as the y value increases.
上記の方法で形成した発熱抵抗体について、実印字寿命
試験全行ない抵抗体保験層の副摩耗性、耐亀裂性を評価
した。通電条件はパルス電圧印加時間１．０ｍ１ａＣ＊
パルス周期１０ｍＪｇＯであり、。Regarding the heating resistor formed by the above method, all actual printing life tests were conducted to evaluate the secondary abrasion resistance and crack resistance of the resistor protection layer. Current conditions are pulse voltage application time 1.0m1aC*
The pulse period is 10 mJgO.
発熱抵抗体形状Ｆｉ＄９０μ簿、長さ２５０μ簿、印加
電力は０．６０Ｆ／抵抗体アある。第４図に感熱紙によ
る５ｓＵｘＮｙの摩耗量を示す。曲線９はＳ ｔ Ｕｘ
ＮｙでＸ稙？０，５〜１１．７としてｙｆｋｔ変化迩せ
た場合、曲線１０は５１０ｘＮｙで’ＪＩＩｔ０．６〜
０．８としてＸイ直を変化させたときの摩耗量を示す。The shape of the heating resistor is 90μ, the length is 250μ, and the applied power is 0.60F/resistor. Fig. 4 shows the wear amount of 5sUxNy due to thermal paper. Curve 9 is S t Ux
X style in NY? If yfkt changes as 0.5 to 11.7, curve 10 will be 'JIIt0.6 to 510xNy.
The amount of wear when changing the X-direction is shown as 0.8.
摩耗量は、従来品のＴ−らか１ｓ ｏ ｏｊ／に、に対
し、不発明の本のに１００１Ｍ、ｇ−以下である。The amount of wear is less than 1001 M,g for the conventional product compared to 1001 M,g for the non-inventive product.
また膜の亀裂の発生については、纂４図に示したＳ ！
ＵｘＮｙでは走行５０′で亀裂発生はない。また発熱抵
抗体の抵抗値の変化に対してもパルス印加数５０００萬
回後において本抵抗値変化率は初期抵抗値に対して５％
以内であり、抵抗体の眼化劣化婢に対しても良好な特性
を示した。Regarding the occurrence of cracks in the membrane, the S!
In UxNy, no cracks occurred after running 50'. Also, regarding changes in the resistance value of the heating resistor, after 5,000 pulses are applied, the resistance value change rate is 5% with respect to the initial resistance value.
It also showed good characteristics against ocular deterioration of the resistor.
以上述べたように本発明に工れげ、感熱紙による耐摩耗
層の摩耗量は１０００Ｌ′に一以下であるため耐摩耗層
の膜犀を減少でき、成膜阿山、を大幅に短縮してスルー
プットヲ大きくすることができる。As described above, as a result of the present invention, the amount of wear of the wear-resistant layer by thermal paper is less than 1 in 1000 L', so the film thickness of the wear-resistant layer can be reduced, and the time required for film formation can be significantly shortened. Throughput can be increased.
また、従来使用されていた耐酸化保論層は不要で、大幅
に製造原価低敷がはがれる。In addition, the oxidation-resistant layer that has been used in the past is not required, significantly lowering manufacturing costs.
第１図は感熱記録ヘッドの断面図、第２図。
第３図、第４図は本発明の感熱ｉｃ録ヘッドの特性を示
す図である。
１・・・アルミナ基板
２・・・、発熱抵抗体層
３・・・Ａノミ極
４−５ＩＵｘＮｙ層
第１ ｌ
Ｃ牙２図
ヤ卜
才３ 図FIG. 1 is a sectional view of the thermal recording head, and FIG. 2 is a sectional view of the thermal recording head. FIGS. 3 and 4 are diagrams showing the characteristics of the thermal IC recording head of the present invention. 1...Alumina substrate 2..., heating resistor layer 3...A chisel pole 4-5IUxNy layer 1st l
Claims (1)
発熱抵抗体階上に設けられた耐摩耗−ふりなる感熱記録
ヘッドにおいて、前記耐摩耗層かＳｉＯｘＮｙ （但し
、Ｑ、 ２（Ｊ （１，８３ｅ Ｑ、 Ｓ（Ｊ＜’Ｌ
：５）であることを％黴とする感熱記録ヘッド。A substrate, a heating resistor layer provided on the substrate, and a wear-resistant thermal recording head provided above the heating resistor, the wear-resistant layer is SiOxNy (however, Q, 2(J (1,83e Q, S(J<'L
:5) A thermal recording head having the following characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000301A JPS58118273A (en) | 1982-01-06 | 1982-01-06 | Heat-sensitive recording head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000301A JPS58118273A (en) | 1982-01-06 | 1982-01-06 | Heat-sensitive recording head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118273A true JPS58118273A (en) | 1983-07-14 |
| JPH0232988B2 JPH0232988B2 (en) | 1990-07-24 |
Family
ID=11470072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000301A Granted JPS58118273A (en) | 1982-01-06 | 1982-01-06 | Heat-sensitive recording head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118273A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4606267A (en) * | 1983-08-27 | 1986-08-19 | International Standard Electric Corporation | Electrothermal page printer |
| JPS61215259A (en) * | 1985-03-19 | 1986-09-25 | 真空材料株式会社 | Manufacture of silicon nitride target for sputtering |
| JPS61277463A (en) * | 1985-06-04 | 1986-12-08 | Toshiba Corp | Thermal head |
| JPS61297159A (en) * | 1985-06-27 | 1986-12-27 | Kyocera Corp | Thermal head and manufacture thereof |
| US5177498A (en) * | 1988-03-28 | 1993-01-05 | Kabushiki Kaisha Toshiba | Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus |
| JPH0574645A (en) * | 1991-09-13 | 1993-03-26 | Hitachi Aic Inc | Chip type electronic parts |
| JPH06325967A (en) * | 1993-05-11 | 1994-11-25 | Nec Corp | Small-sized electronic component |
| US5590969A (en) * | 1992-09-28 | 1997-01-07 | Tdk Corporation | Wear-resistant protective film for thermal printing heads |
| JP2008130698A (en) * | 2006-11-17 | 2008-06-05 | Ulvac Japan Ltd | METHOD OF LAMINATING SiON FILMS |
| US12037975B2 (en) | 2021-01-21 | 2024-07-16 | Voith Patent Gmbh | Francis-type hydraulic machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5365066A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
| JPS5522863A (en) * | 1978-08-07 | 1980-02-18 | Nec Corp | Manufacturing method for semiconductor device |
| JPS56111680A (en) * | 1980-02-08 | 1981-09-03 | Toshiba Corp | Thermal head |
-
1982
- 1982-01-06 JP JP57000301A patent/JPS58118273A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5365066A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
| JPS5522863A (en) * | 1978-08-07 | 1980-02-18 | Nec Corp | Manufacturing method for semiconductor device |
| JPS56111680A (en) * | 1980-02-08 | 1981-09-03 | Toshiba Corp | Thermal head |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4606267A (en) * | 1983-08-27 | 1986-08-19 | International Standard Electric Corporation | Electrothermal page printer |
| JPS61215259A (en) * | 1985-03-19 | 1986-09-25 | 真空材料株式会社 | Manufacture of silicon nitride target for sputtering |
| JPH04948B2 (en) * | 1985-03-19 | 1992-01-09 | Shinku Zairyo Kk | |
| JPS61277463A (en) * | 1985-06-04 | 1986-12-08 | Toshiba Corp | Thermal head |
| JPS61297159A (en) * | 1985-06-27 | 1986-12-27 | Kyocera Corp | Thermal head and manufacture thereof |
| US5177498A (en) * | 1988-03-28 | 1993-01-05 | Kabushiki Kaisha Toshiba | Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus |
| JPH0574645A (en) * | 1991-09-13 | 1993-03-26 | Hitachi Aic Inc | Chip type electronic parts |
| US5590969A (en) * | 1992-09-28 | 1997-01-07 | Tdk Corporation | Wear-resistant protective film for thermal printing heads |
| JPH06325967A (en) * | 1993-05-11 | 1994-11-25 | Nec Corp | Small-sized electronic component |
| JP2008130698A (en) * | 2006-11-17 | 2008-06-05 | Ulvac Japan Ltd | METHOD OF LAMINATING SiON FILMS |
| US12037975B2 (en) | 2021-01-21 | 2024-07-16 | Voith Patent Gmbh | Francis-type hydraulic machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0232988B2 (en) | 1990-07-24 |
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