JPS52111379A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS52111379A
JPS52111379A JP2765176A JP2765176A JPS52111379A JP S52111379 A JPS52111379 A JP S52111379A JP 2765176 A JP2765176 A JP 2765176A JP 2765176 A JP2765176 A JP 2765176A JP S52111379 A JPS52111379 A JP S52111379A
Authority
JP
Japan
Prior art keywords
semi
conductor device
atmosphous
stress
correct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2765176A
Other languages
Japanese (ja)
Inventor
Toshio Yonezawa
Takashi Yasujima
Masahito Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2765176A priority Critical patent/JPS52111379A/en
Priority to DE2658304A priority patent/DE2658304C2/en
Priority to NLAANVRAGE7614307,A priority patent/NL171944C/en
Priority to FR7639087A priority patent/FR2336795A1/en
Priority to GB54126/76A priority patent/GB1572819A/en
Priority to GB23196/79A priority patent/GB1572820A/en
Publication of JPS52111379A publication Critical patent/JPS52111379A/en
Priority to US05/915,542 priority patent/US4224636A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To enable effective passivation and impurity blocking and to correct the stress between a base by forming one of or both of insulation film and protection film by atmosphous SiC layer.
COPYRIGHT: (C)1977,JPO&Japio
JP2765176A 1975-12-24 1976-03-16 Semi-conductor device Pending JPS52111379A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2765176A JPS52111379A (en) 1976-03-16 1976-03-16 Semi-conductor device
DE2658304A DE2658304C2 (en) 1975-12-24 1976-12-22 Semiconductor device
NLAANVRAGE7614307,A NL171944C (en) 1975-12-24 1976-12-23 SEMICONDUCTOR DEVICE WITH AN INSULATING SILICON DIOXIDE LAYER APPLIED TO THE SEMICONDUCTOR BODY AND A SILICON CARBIDE PROTECTIVE LAYER.
FR7639087A FR2336795A1 (en) 1975-12-24 1976-12-24 PROTECTIVE FILMS FOR SEMICONDUCTOR DEVICES
GB54126/76A GB1572819A (en) 1975-12-24 1976-12-24 Semiconductor device
GB23196/79A GB1572820A (en) 1975-12-24 1976-12-24 Semiconductor device
US05/915,542 US4224636A (en) 1975-12-24 1978-06-14 Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2765176A JPS52111379A (en) 1976-03-16 1976-03-16 Semi-conductor device

Publications (1)

Publication Number Publication Date
JPS52111379A true JPS52111379A (en) 1977-09-19

Family

ID=12226813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2765176A Pending JPS52111379A (en) 1975-12-24 1976-03-16 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS52111379A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133086A (en) * 1978-04-07 1979-10-16 Toshiba Corp Semiconductor device and its manufacture
JPS5840831A (en) * 1982-08-13 1983-03-09 Hitachi Ltd Semiconductor device
JPS60189226A (en) * 1984-03-08 1985-09-26 Sharp Corp Coating film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133086A (en) * 1978-04-07 1979-10-16 Toshiba Corp Semiconductor device and its manufacture
JPS5840831A (en) * 1982-08-13 1983-03-09 Hitachi Ltd Semiconductor device
JPS60189226A (en) * 1984-03-08 1985-09-26 Sharp Corp Coating film
JPH0345896B2 (en) * 1984-03-08 1991-07-12 Sharp Kk

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