JPS52111379A - Semi-conductor device - Google Patents
Semi-conductor deviceInfo
- Publication number
- JPS52111379A JPS52111379A JP2765176A JP2765176A JPS52111379A JP S52111379 A JPS52111379 A JP S52111379A JP 2765176 A JP2765176 A JP 2765176A JP 2765176 A JP2765176 A JP 2765176A JP S52111379 A JPS52111379 A JP S52111379A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- conductor device
- atmosphous
- stress
- correct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To enable effective passivation and impurity blocking and to correct the stress between a base by forming one of or both of insulation film and protection film by atmosphous SiC layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2765176A JPS52111379A (en) | 1976-03-16 | 1976-03-16 | Semi-conductor device |
DE2658304A DE2658304C2 (en) | 1975-12-24 | 1976-12-22 | Semiconductor device |
NLAANVRAGE7614307,A NL171944C (en) | 1975-12-24 | 1976-12-23 | SEMICONDUCTOR DEVICE WITH AN INSULATING SILICON DIOXIDE LAYER APPLIED TO THE SEMICONDUCTOR BODY AND A SILICON CARBIDE PROTECTIVE LAYER. |
FR7639087A FR2336795A1 (en) | 1975-12-24 | 1976-12-24 | PROTECTIVE FILMS FOR SEMICONDUCTOR DEVICES |
GB54126/76A GB1572819A (en) | 1975-12-24 | 1976-12-24 | Semiconductor device |
GB23196/79A GB1572820A (en) | 1975-12-24 | 1976-12-24 | Semiconductor device |
US05/915,542 US4224636A (en) | 1975-12-24 | 1978-06-14 | Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2765176A JPS52111379A (en) | 1976-03-16 | 1976-03-16 | Semi-conductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52111379A true JPS52111379A (en) | 1977-09-19 |
Family
ID=12226813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2765176A Pending JPS52111379A (en) | 1975-12-24 | 1976-03-16 | Semi-conductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52111379A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54133086A (en) * | 1978-04-07 | 1979-10-16 | Toshiba Corp | Semiconductor device and its manufacture |
JPS5840831A (en) * | 1982-08-13 | 1983-03-09 | Hitachi Ltd | Semiconductor device |
JPS60189226A (en) * | 1984-03-08 | 1985-09-26 | Sharp Corp | Coating film |
-
1976
- 1976-03-16 JP JP2765176A patent/JPS52111379A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54133086A (en) * | 1978-04-07 | 1979-10-16 | Toshiba Corp | Semiconductor device and its manufacture |
JPS5840831A (en) * | 1982-08-13 | 1983-03-09 | Hitachi Ltd | Semiconductor device |
JPS60189226A (en) * | 1984-03-08 | 1985-09-26 | Sharp Corp | Coating film |
JPH0345896B2 (en) * | 1984-03-08 | 1991-07-12 | Sharp Kk |
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