JPS53118383A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53118383A
JPS53118383A JP3372277A JP3372277A JPS53118383A JP S53118383 A JPS53118383 A JP S53118383A JP 3372277 A JP3372277 A JP 3372277A JP 3372277 A JP3372277 A JP 3372277A JP S53118383 A JPS53118383 A JP S53118383A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrode
rectification junction
protecting semiconductor
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3372277A
Other languages
Japanese (ja)
Other versions
JPS6229911B2 (en
Inventor
Manzo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3372277A priority Critical patent/JPS53118383A/en
Publication of JPS53118383A publication Critical patent/JPS53118383A/en
Publication of JPS6229911B2 publication Critical patent/JPS6229911B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To secure a sufficient protection to the excessive voltage of the protected semiconductor device connecting to the protecting semiconductor device, by setting the minimum distance within 50μm between the second electrode and the rectification junction for the protecting semiconductor device in which the first electrode is installed at one region forming the rectification junction and the second electrode is provided at the other region respectively.
COPYRIGHT: (C)1978,JPO&Japio
JP3372277A 1977-03-25 1977-03-25 Semiconductor device Granted JPS53118383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3372277A JPS53118383A (en) 1977-03-25 1977-03-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3372277A JPS53118383A (en) 1977-03-25 1977-03-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53118383A true JPS53118383A (en) 1978-10-16
JPS6229911B2 JPS6229911B2 (en) 1987-06-29

Family

ID=12394282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3372277A Granted JPS53118383A (en) 1977-03-25 1977-03-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53118383A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186354A (en) * 2004-12-15 2006-07-13 Lg Electronics Inc Zener diode, its manufacturing method and packaging method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186354A (en) * 2004-12-15 2006-07-13 Lg Electronics Inc Zener diode, its manufacturing method and packaging method

Also Published As

Publication number Publication date
JPS6229911B2 (en) 1987-06-29

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