JPS5621337A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS5621337A JPS5621337A JP9765079A JP9765079A JPS5621337A JP S5621337 A JPS5621337 A JP S5621337A JP 9765079 A JP9765079 A JP 9765079A JP 9765079 A JP9765079 A JP 9765079A JP S5621337 A JPS5621337 A JP S5621337A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- peripheral part
- manufacture
- chipping
- blocked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 5
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 239000000843 powder Substances 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To prevent the adverse effect of fine powder and damage which are produced when a semiconductor substrate is handled, by previously making a step or a groove on the peripheral part of the substrate. CONSTITUTION:To manufacture the semiconductor element, the step 4 is provided on the obverse side of the peripheral part of an Si substrare 1. After that, the element is manufactured by a conventional process. Fine powder, which is made as a result of chipping of an edge 5 when the Si substrate 1 is attached to or detached from a manufacturing unit or a jig in the element manufacturing process, is blocked by the wall 6 of the step 4 to greatly reduce flying-away onto the obverse surface 2 of the substrate 1. Defects such as a slip, which is caused by the chipping, are blocked by the wall 6 from extending to the central part of the obverse surface. A groove may be provided on the peripheral part of the substrate 1 instead of the step 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9765079A JPS5621337A (en) | 1979-07-31 | 1979-07-31 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9765079A JPS5621337A (en) | 1979-07-31 | 1979-07-31 | Manufacture of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5621337A true JPS5621337A (en) | 1981-02-27 |
Family
ID=14197962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9765079A Pending JPS5621337A (en) | 1979-07-31 | 1979-07-31 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5621337A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120343A (en) * | 1981-01-19 | 1982-07-27 | Oki Electric Ind Co Ltd | Manufacture of substrate for semiconductor element |
JPS5874044A (en) * | 1981-10-29 | 1983-05-04 | Matsushita Electric Ind Co Ltd | Semiconductor substrate |
JP2006310702A (en) * | 2005-05-02 | 2006-11-09 | Sharp Corp | Substrate supporting method and semiconductor substrate |
-
1979
- 1979-07-31 JP JP9765079A patent/JPS5621337A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120343A (en) * | 1981-01-19 | 1982-07-27 | Oki Electric Ind Co Ltd | Manufacture of substrate for semiconductor element |
JPS5874044A (en) * | 1981-10-29 | 1983-05-04 | Matsushita Electric Ind Co Ltd | Semiconductor substrate |
JP2006310702A (en) * | 2005-05-02 | 2006-11-09 | Sharp Corp | Substrate supporting method and semiconductor substrate |
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