JPS6482814A - Piezoelectric body monocrystal wafer and its manufacture - Google Patents
Piezoelectric body monocrystal wafer and its manufactureInfo
- Publication number
- JPS6482814A JPS6482814A JP24051087A JP24051087A JPS6482814A JP S6482814 A JPS6482814 A JP S6482814A JP 24051087 A JP24051087 A JP 24051087A JP 24051087 A JP24051087 A JP 24051087A JP S6482814 A JPS6482814 A JP S6482814A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- piezoelectric body
- sandblasting
- coarse
- distortion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the generation of a local deep linear flaw to be the cause of a processing distortion layer and a crack by making one surface of a piezoelectric body mono-crystal wafer into a mirror grinding surface, making other surface into a coarse surface by sandblasting, etching the surface of a suitable coarse surface to several microns or below and removing it. CONSTITUTION:A wafer 1 obtained by slicing a piezoelectric body monocrystal pool generates a thickness nonuniformity and a nonuniform unevenness. This is made into the double surface wrapping and the double surface is made into the parallel plane. Next, when a coarse surface 2 due to the sandblasting is formed on one surface, the wrap is generated due to the difference in the distortion of the double surface, and therefore, this is suitably etched and a distortion is removed. Next, other surface is mirror-ground and a mirror 3 is formed. The mirror grinding is executed, the mirror 3 is formed and a protecting film 4 such as seal wax is covered. Next, the coarse surface 2 due to the sandblasting is formed on the other surface, etching is executed suitably and the warp is removed. Next, the protecting film 4 is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24051087A JPS6482814A (en) | 1987-09-25 | 1987-09-25 | Piezoelectric body monocrystal wafer and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24051087A JPS6482814A (en) | 1987-09-25 | 1987-09-25 | Piezoelectric body monocrystal wafer and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482814A true JPS6482814A (en) | 1989-03-28 |
Family
ID=17060589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24051087A Pending JPS6482814A (en) | 1987-09-25 | 1987-09-25 | Piezoelectric body monocrystal wafer and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482814A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03220810A (en) * | 1990-01-25 | 1991-09-30 | Shin Etsu Chem Co Ltd | Piezoelectric single crystal wafer and its manufacture |
JPH06349795A (en) * | 1993-06-08 | 1994-12-22 | Shin Etsu Handotai Co Ltd | Manufacture of semiconductor wafer |
-
1987
- 1987-09-25 JP JP24051087A patent/JPS6482814A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03220810A (en) * | 1990-01-25 | 1991-09-30 | Shin Etsu Chem Co Ltd | Piezoelectric single crystal wafer and its manufacture |
JPH06349795A (en) * | 1993-06-08 | 1994-12-22 | Shin Etsu Handotai Co Ltd | Manufacture of semiconductor wafer |
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