JPS567434A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS567434A
JPS567434A JP8240879A JP8240879A JPS567434A JP S567434 A JPS567434 A JP S567434A JP 8240879 A JP8240879 A JP 8240879A JP 8240879 A JP8240879 A JP 8240879A JP S567434 A JPS567434 A JP S567434A
Authority
JP
Japan
Prior art keywords
inclined planes
layers
areas
etching
electrode layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8240879A
Other languages
Japanese (ja)
Inventor
Susumu Ichinose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP8240879A priority Critical patent/JPS567434A/en
Publication of JPS567434A publication Critical patent/JPS567434A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To obtain rectilinear inclined planes by a method wherein the areas of electrode layers are made smaller than the areas of semiconductor materials and the damaged layers of inclined planes by means of cutting working are removed by means of etching. CONSTITUTION:An electrode layer 16 of a semiconductor wafer 10 is stuck on a glass plate 19 as an example of supporting bodies, and metallic discs 21 as the one examples of etching-resisting layers are stuck on an ele electrode layer 15 as another main surface. Abrasives are blown against the whole from the upper portions of the discs 21, and semiconductor elements 1a, whose circumferential surfaces have inclined planes 17a, are formed. The circumferential surface portions of the electrode layers 15, 16 are etched, and semiconductor elements 1d are formed which the areas of the electrode layers 15, 16 are made smaller than the areas of semiconductor materials 11-13. The damaged layers 23 of the inclined palnes 17a due to the spraying of the abrasives are removed by means of etching treatment, and semiconductor elements 1e with rectilinear inclined planes 17c are made up. Thus, since the electrode layers 15, 16 retreat from the semiconductor materials, the inclined planes 17c are uniformly removed by means of etching over the whole circumferential surface, and consequently the inclined planes 17c are formed in rectilinear shapes.
JP8240879A 1979-06-28 1979-06-28 Manufacture of semiconductor device Pending JPS567434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8240879A JPS567434A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8240879A JPS567434A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS567434A true JPS567434A (en) 1981-01-26

Family

ID=13773757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8240879A Pending JPS567434A (en) 1979-06-28 1979-06-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS567434A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978531A (en) * 1987-08-13 1990-12-18 Fordonal, S.A. Clebopride transdermal patch
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
US5618753A (en) * 1994-10-04 1997-04-08 Nec Corporation Method for forming electrodes on mesa structures of a semiconductor substrate
US5741482A (en) * 1996-11-06 1998-04-21 Hercules Incorporated Air treatment gel compositions

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978531A (en) * 1987-08-13 1990-12-18 Fordonal, S.A. Clebopride transdermal patch
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
US5618753A (en) * 1994-10-04 1997-04-08 Nec Corporation Method for forming electrodes on mesa structures of a semiconductor substrate
US5741482A (en) * 1996-11-06 1998-04-21 Hercules Incorporated Air treatment gel compositions
WO1998019717A1 (en) * 1996-11-06 1998-05-14 Hercules Incorporated Air treatment gel compositions

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