JPS5648148A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5648148A JPS5648148A JP12518179A JP12518179A JPS5648148A JP S5648148 A JPS5648148 A JP S5648148A JP 12518179 A JP12518179 A JP 12518179A JP 12518179 A JP12518179 A JP 12518179A JP S5648148 A JPS5648148 A JP S5648148A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- elements
- grooves
- mesa grooves
- slopes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To easily obtain many semiconductor elements with a high yield by providing a semiconductor wafer with mesa grooves after selectively etching electrode layers from both the major surfaces of a semiconductor wafer wherein abrasives are blew from one major surface and the semiconductor wafer is separated from the mesa grooves. CONSTITUTION:Resist masks 25, 26 are applied to both the major surfaces of a semiconductor wafer 10 having a P-N junction 14 and Al films 15 are etched by an HF solution. Then, a photo etching is applied with a mixed solution of HF and HNO3 to make mesa grooves 27, 28. The masks 26 are fixed to a glass sheet 19 by wax 18. And the mesa grooves 27 are grinded by blowing SiC powders 23 to form elements 1b having slopes 17b around the circumference. The elements 1b also have slopes in the reverse direction by the grooves 28. The elements 1b will be obtained by applying the removal of etching to damaged layers 24 caused by grinding and by removing the resists 25, 26. No acute angles at angular sections will eliminate a broken fault and grinding hours will be reduced compared to a convertional adhering sheet or metal disc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12518179A JPS5648148A (en) | 1979-09-27 | 1979-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12518179A JPS5648148A (en) | 1979-09-27 | 1979-09-27 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5648148A true JPS5648148A (en) | 1981-05-01 |
Family
ID=14903894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12518179A Pending JPS5648148A (en) | 1979-09-27 | 1979-09-27 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5648148A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1992009098A2 (en) * | 1990-11-05 | 1992-05-29 | Harris Corporation | Process for forming extremely thin integrated circuit dice |
JPH04277625A (en) * | 1991-03-05 | 1992-10-02 | Murata Mfg Co Ltd | Method for working chip type electronic component |
WO2001075954A1 (en) * | 2000-03-31 | 2001-10-11 | Toyoda Gosei Co., Ltd. | Method for dicing semiconductor wafer into chips |
-
1979
- 1979-09-27 JP JP12518179A patent/JPS5648148A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1992009098A2 (en) * | 1990-11-05 | 1992-05-29 | Harris Corporation | Process for forming extremely thin integrated circuit dice |
WO1992009098A3 (en) * | 1990-11-05 | 1992-07-09 | Harris Corp | Process for forming extremely thin integrated circuit dice |
JPH04277625A (en) * | 1991-03-05 | 1992-10-02 | Murata Mfg Co Ltd | Method for working chip type electronic component |
WO2001075954A1 (en) * | 2000-03-31 | 2001-10-11 | Toyoda Gosei Co., Ltd. | Method for dicing semiconductor wafer into chips |
US7121925B2 (en) | 2000-03-31 | 2006-10-17 | Toyoda Gosei Co., Ltd. | Method for dicing semiconductor wafer into chips |
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