JPS5575236A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5575236A JPS5575236A JP15032678A JP15032678A JPS5575236A JP S5575236 A JPS5575236 A JP S5575236A JP 15032678 A JP15032678 A JP 15032678A JP 15032678 A JP15032678 A JP 15032678A JP S5575236 A JPS5575236 A JP S5575236A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- grooves
- semiconductor
- recess
- urged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the yield of fabricating a semiconductor device at its dicing process by chemically etching in advance along the scribe surface of a semiconductor wafer to thereby form a recess groove therealong and forming mechanically a polishing groove therealong.
CONSTITUTION: A resist mask is formed on a semiconductor wafer, and the wafer is etched with a mixture solution of fluoric acid and nitric acid to thereby form lattice recess grooves on the scribe surface thereof. The interval and width of the grooves are selected according to the size of the semiconductor divece. After the recess grooves are diced by a dicing saw to approx. half the thickness of the wafer in depth, the wafer is urged from the opposite side of the grooves to thereby separate it into pieces. When an adhesive tape is labeled on one surface of the wafer at this time and the wafer is then urged on a rubber plate, the array of the wafer can be retained as it is. According to this method, it can eliminate cracks, defects at the edges of the wafer due to the friction among the pieces of the wafer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15032678A JPS5575236A (en) | 1978-12-04 | 1978-12-04 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15032678A JPS5575236A (en) | 1978-12-04 | 1978-12-04 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5575236A true JPS5575236A (en) | 1980-06-06 |
Family
ID=15494564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15032678A Pending JPS5575236A (en) | 1978-12-04 | 1978-12-04 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575236A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6432635A (en) * | 1987-07-22 | 1989-02-02 | Alps Electric Co Ltd | Manufacture of thin-film element substrate |
US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
-
1978
- 1978-12-04 JP JP15032678A patent/JPS5575236A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6432635A (en) * | 1987-07-22 | 1989-02-02 | Alps Electric Co Ltd | Manufacture of thin-film element substrate |
US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
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