JPS55121643A - Fabricating method of semiconductor element - Google Patents

Fabricating method of semiconductor element

Info

Publication number
JPS55121643A
JPS55121643A JP2824279A JP2824279A JPS55121643A JP S55121643 A JPS55121643 A JP S55121643A JP 2824279 A JP2824279 A JP 2824279A JP 2824279 A JP2824279 A JP 2824279A JP S55121643 A JPS55121643 A JP S55121643A
Authority
JP
Japan
Prior art keywords
wafer
layers
peripheral edges
semiconductor
fractured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2824279A
Other languages
Japanese (ja)
Inventor
Shinzaburo Iwabuchi
Shoichi Kitane
Fumio Tobioka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2824279A priority Critical patent/JPS55121643A/en
Publication of JPS55121643A publication Critical patent/JPS55121643A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To bevel a mirror surface of a semiconductor wafer without fractured layer by mechanically leveling the peripheral edges of the wafer with diamond- bonded grinding wheels and then chemically etching them. CONSTITUTION:The peripheral edges of a semiconductor wafer are mecahnically beveled with diamond-bonded grinding wheels. Thus, fractured layers 3 are formed on the beveled surface layers of the wafer. Then, the layers 3 are chemically etched and removed from the wafer. Thus, the peripheral edges of the wafer are mirror etched to be beveled without the fractured layers. Since no fractured layers are provided at the peripheral edges of the wafer as above, no end fracture nor crack occurs due to mechanical or thermal shock during the machining work of the wafer so as to enhance the yield of the semiconductor element.
JP2824279A 1979-03-13 1979-03-13 Fabricating method of semiconductor element Pending JPS55121643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2824279A JPS55121643A (en) 1979-03-13 1979-03-13 Fabricating method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2824279A JPS55121643A (en) 1979-03-13 1979-03-13 Fabricating method of semiconductor element

Publications (1)

Publication Number Publication Date
JPS55121643A true JPS55121643A (en) 1980-09-18

Family

ID=12243110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2824279A Pending JPS55121643A (en) 1979-03-13 1979-03-13 Fabricating method of semiconductor element

Country Status (1)

Country Link
JP (1) JPS55121643A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958827A (en) * 1982-09-28 1984-04-04 Toshiba Corp Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer
JPS59107520A (en) * 1982-12-13 1984-06-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor substrate
JPS62134935A (en) * 1985-12-09 1987-06-18 Mitsubishi Metal Corp Surface treating method for semiconductor wafer
JPH0513388A (en) * 1991-06-29 1993-01-22 Toshiba Corp Manufacture of semiconductor wafer
JPH05217830A (en) * 1992-08-21 1993-08-27 Hitachi Ltd Wafer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958827A (en) * 1982-09-28 1984-04-04 Toshiba Corp Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer
US4588473A (en) * 1982-09-28 1986-05-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor wafer process
JPS59107520A (en) * 1982-12-13 1984-06-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor substrate
JPS62134935A (en) * 1985-12-09 1987-06-18 Mitsubishi Metal Corp Surface treating method for semiconductor wafer
JPH0410736B2 (en) * 1985-12-09 1992-02-26
JPH0513388A (en) * 1991-06-29 1993-01-22 Toshiba Corp Manufacture of semiconductor wafer
JPH05217830A (en) * 1992-08-21 1993-08-27 Hitachi Ltd Wafer

Similar Documents

Publication Publication Date Title
US3152939A (en) Process for preparing semiconductor members
JPH03196610A (en) Bonding method for silicon wafer
JPH0384919A (en) Method and apparatus for bonding semiconductor substrates
JPH04116619A (en) Production of thin-type liquid crystal display element
ES2055820T3 (en) A method of production of guides of optical waves.
WO2003046968A1 (en) Production method for silicon wafer and silicon wafer and soi wafer
JPS5351970A (en) Manufacture for semiconductor substrate
JPH03250616A (en) Bonded wafer and its manufacture
JPH02111696A (en) Process for fabricating three-dimensional silicon structure
JPH02186622A (en) Susceptor
JPS54110783A (en) Semiconductor substrate and its manufacture
JPS5958827A (en) Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer
GB995714A (en) A method of severing crystalline bodies
DE2929682A1 (en) Method for etching silicon substrates and substrate for carrying out the method
JPS6336988A (en) Dividing method for semiconductor wafer
JPS61145839A (en) Semiconductor wafer bonding method and bonding jig
JPS60158410A (en) Preparation of optical branching filter
JPS55146928A (en) Manufacturing of photomask substrate
JPS63261851A (en) Manufacture of semiconductor element
JPH03214625A (en) Manufacture of semiconductor device
EP0094302A3 (en) A method of removing impurities from semiconductor wafers
JPS6419752A (en) Semiconductor integrated circuit device
JPS6193614A (en) Semiconductor single-crystal substrate
JPS63192004A (en) Waveguide type optical element and its production
DE19840508A1 (en) Separating individual semiconductor chips from composite wafer