JPS55121643A - Fabricating method of semiconductor element - Google Patents

Fabricating method of semiconductor element

Info

Publication number
JPS55121643A
JPS55121643A JP2824279A JP2824279A JPS55121643A JP S55121643 A JPS55121643 A JP S55121643A JP 2824279 A JP2824279 A JP 2824279A JP 2824279 A JP2824279 A JP 2824279A JP S55121643 A JPS55121643 A JP S55121643A
Authority
JP
Japan
Prior art keywords
wafer
layers
peripheral edges
fractured
beveled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2824279A
Other languages
Japanese (ja)
Inventor
Fumio Tobioka
Shoichi Kitane
Shinzaburo Iwabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2824279A priority Critical patent/JPS55121643A/en
Publication of JPS55121643A publication Critical patent/JPS55121643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To bevel a mirror surface of a semiconductor wafer without fractured layer by mechanically leveling the peripheral edges of the wafer with diamond- bonded grinding wheels and then chemically etching them. CONSTITUTION:The peripheral edges of a semiconductor wafer are mecahnically beveled with diamond-bonded grinding wheels. Thus, fractured layers 3 are formed on the beveled surface layers of the wafer. Then, the layers 3 are chemically etched and removed from the wafer. Thus, the peripheral edges of the wafer are mirror etched to be beveled without the fractured layers. Since no fractured layers are provided at the peripheral edges of the wafer as above, no end fracture nor crack occurs due to mechanical or thermal shock during the machining work of the wafer so as to enhance the yield of the semiconductor element.
JP2824279A 1979-03-13 1979-03-13 Fabricating method of semiconductor element Pending JPS55121643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2824279A JPS55121643A (en) 1979-03-13 1979-03-13 Fabricating method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2824279A JPS55121643A (en) 1979-03-13 1979-03-13 Fabricating method of semiconductor element

Publications (1)

Publication Number Publication Date
JPS55121643A true JPS55121643A (en) 1980-09-18

Family

ID=12243110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2824279A Pending JPS55121643A (en) 1979-03-13 1979-03-13 Fabricating method of semiconductor element

Country Status (1)

Country Link
JP (1) JPS55121643A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958827A (en) * 1982-09-28 1984-04-04 Toshiba Corp Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer
JPS59107520A (en) * 1982-12-13 1984-06-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor substrate
JPS62134935A (en) * 1985-12-09 1987-06-18 Mitsubishi Metal Corp Surface treating method for semiconductor wafer
JPH0513388A (en) * 1991-06-29 1993-01-22 Toshiba Corp Manufacture of semiconductor wafer
JPH05217830A (en) * 1992-08-21 1993-08-27 Hitachi Ltd Wafer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958827A (en) * 1982-09-28 1984-04-04 Toshiba Corp Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer
US4588473A (en) * 1982-09-28 1986-05-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor wafer process
JPS59107520A (en) * 1982-12-13 1984-06-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor substrate
JPS62134935A (en) * 1985-12-09 1987-06-18 Mitsubishi Metal Corp Surface treating method for semiconductor wafer
JPH0410736B2 (en) * 1985-12-09 1992-02-26
JPH0513388A (en) * 1991-06-29 1993-01-22 Toshiba Corp Manufacture of semiconductor wafer
JPH05217830A (en) * 1992-08-21 1993-08-27 Hitachi Ltd Wafer

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