JPS55121643A - Fabricating method of semiconductor element - Google Patents
Fabricating method of semiconductor elementInfo
- Publication number
- JPS55121643A JPS55121643A JP2824279A JP2824279A JPS55121643A JP S55121643 A JPS55121643 A JP S55121643A JP 2824279 A JP2824279 A JP 2824279A JP 2824279 A JP2824279 A JP 2824279A JP S55121643 A JPS55121643 A JP S55121643A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- layers
- peripheral edges
- fractured
- beveled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000010410 layer Substances 0.000 abstract 5
- 230000002093 peripheral effect Effects 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To bevel a mirror surface of a semiconductor wafer without fractured layer by mechanically leveling the peripheral edges of the wafer with diamond- bonded grinding wheels and then chemically etching them. CONSTITUTION:The peripheral edges of a semiconductor wafer are mecahnically beveled with diamond-bonded grinding wheels. Thus, fractured layers 3 are formed on the beveled surface layers of the wafer. Then, the layers 3 are chemically etched and removed from the wafer. Thus, the peripheral edges of the wafer are mirror etched to be beveled without the fractured layers. Since no fractured layers are provided at the peripheral edges of the wafer as above, no end fracture nor crack occurs due to mechanical or thermal shock during the machining work of the wafer so as to enhance the yield of the semiconductor element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2824279A JPS55121643A (en) | 1979-03-13 | 1979-03-13 | Fabricating method of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2824279A JPS55121643A (en) | 1979-03-13 | 1979-03-13 | Fabricating method of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55121643A true JPS55121643A (en) | 1980-09-18 |
Family
ID=12243110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2824279A Pending JPS55121643A (en) | 1979-03-13 | 1979-03-13 | Fabricating method of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121643A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958827A (en) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer |
JPS59107520A (en) * | 1982-12-13 | 1984-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor substrate |
JPS62134935A (en) * | 1985-12-09 | 1987-06-18 | Mitsubishi Metal Corp | Surface treating method for semiconductor wafer |
JPH0513388A (en) * | 1991-06-29 | 1993-01-22 | Toshiba Corp | Manufacture of semiconductor wafer |
JPH05217830A (en) * | 1992-08-21 | 1993-08-27 | Hitachi Ltd | Wafer |
-
1979
- 1979-03-13 JP JP2824279A patent/JPS55121643A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958827A (en) * | 1982-09-28 | 1984-04-04 | Toshiba Corp | Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer |
US4588473A (en) * | 1982-09-28 | 1986-05-13 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor wafer process |
JPS59107520A (en) * | 1982-12-13 | 1984-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor substrate |
JPS62134935A (en) * | 1985-12-09 | 1987-06-18 | Mitsubishi Metal Corp | Surface treating method for semiconductor wafer |
JPH0410736B2 (en) * | 1985-12-09 | 1992-02-26 | ||
JPH0513388A (en) * | 1991-06-29 | 1993-01-22 | Toshiba Corp | Manufacture of semiconductor wafer |
JPH05217830A (en) * | 1992-08-21 | 1993-08-27 | Hitachi Ltd | Wafer |
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