JPS59107520A - Semiconductor substrate - Google Patents

Semiconductor substrate

Info

Publication number
JPS59107520A
JPS59107520A JP21695982A JP21695982A JPS59107520A JP S59107520 A JPS59107520 A JP S59107520A JP 21695982 A JP21695982 A JP 21695982A JP 21695982 A JP21695982 A JP 21695982A JP S59107520 A JPS59107520 A JP S59107520A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
mirror
finished
generation
cleavage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21695982A
Other languages
Japanese (ja)
Inventor
Shigeyuki Iiyama
Junji Watanabe
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP21695982A priority Critical patent/JPS59107520A/en
Publication of JPS59107520A publication Critical patent/JPS59107520A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers

Abstract

PURPOSE:To reduce the generation of breaking on the titled semiconductor substrate by a method wherein the side face thereof is formed into mirror face. CONSTITUTION:A surface 1 is finished in mirror face having no distortion and the side face of the semiconductor substrate, having the back side 4 as cut-off face and the side face 2 of 1.5mumRmax of polished finish, is finished in the mirror face of 0.2mumRmax or below in surface roughness by performing chemical polishing. When said side face is finished in mirror face, the side face is formed into the state wherein defects such as notches, an uneven surface, cracks, scratches and the like, where stress concentration is generated and will be the starting point of a cleavage causing breakages, are almost removed. As a result, the generation of a cleavage can be prevented, thereby enabling to increase the breakage strength of the semiconductor substrate.
JP21695982A 1982-12-13 1982-12-13 Semiconductor substrate Pending JPS59107520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21695982A JPS59107520A (en) 1982-12-13 1982-12-13 Semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21695982A JPS59107520A (en) 1982-12-13 1982-12-13 Semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS59107520A true JPS59107520A (en) 1984-06-21

Family

ID=16696593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21695982A Pending JPS59107520A (en) 1982-12-13 1982-12-13 Semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS59107520A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159740A (en) * 1984-10-25 1986-07-19 Tandem Computers Inc Miniaturization of wafer
JPS62263626A (en) * 1986-05-09 1987-11-16 Japan Silicon Co Ltd Semiconductor wafer
JPH02100319A (en) * 1988-10-07 1990-04-12 Fujitsu Ltd Manufacture of semiconductor device
JPH03280537A (en) * 1990-03-29 1991-12-11 Shin Etsu Handotai Co Ltd Epitaxial growth substrate
JPH0496247A (en) * 1990-08-03 1992-03-27 Shin Etsu Handotai Co Ltd Measurement of semiconductor wafer and particles thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121643A (en) * 1979-03-13 1980-09-18 Toshiba Corp Fabricating method of semiconductor element
JPS5958827A (en) * 1982-09-28 1984-04-04 Toshiba Corp Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121643A (en) * 1979-03-13 1980-09-18 Toshiba Corp Fabricating method of semiconductor element
JPS5958827A (en) * 1982-09-28 1984-04-04 Toshiba Corp Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159740A (en) * 1984-10-25 1986-07-19 Tandem Computers Inc Miniaturization of wafer
JPS62263626A (en) * 1986-05-09 1987-11-16 Japan Silicon Co Ltd Semiconductor wafer
JPH079873B2 (en) * 1986-05-09 1995-02-01 三菱マテリアルシリコン株式会社 Semiconductor wafer
JPH02100319A (en) * 1988-10-07 1990-04-12 Fujitsu Ltd Manufacture of semiconductor device
JPH03280537A (en) * 1990-03-29 1991-12-11 Shin Etsu Handotai Co Ltd Epitaxial growth substrate
JPH0496247A (en) * 1990-08-03 1992-03-27 Shin Etsu Handotai Co Ltd Measurement of semiconductor wafer and particles thereof

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