JPS57104221A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS57104221A
JPS57104221A JP18051980A JP18051980A JPS57104221A JP S57104221 A JPS57104221 A JP S57104221A JP 18051980 A JP18051980 A JP 18051980A JP 18051980 A JP18051980 A JP 18051980A JP S57104221 A JPS57104221 A JP S57104221A
Authority
JP
Japan
Prior art keywords
layer
plasma
gold electrode
tantalum nitride
nichrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18051980A
Other languages
Japanese (ja)
Inventor
Takayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP18051980A priority Critical patent/JPS57104221A/en
Publication of JPS57104221A publication Critical patent/JPS57104221A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To enable etching treatment on a layer to be etched by plasma without any damage on other region by a method wherein gas containing CF4 and O2 is used as gas for plasma. CONSTITUTION:When a gold electrode layer and a tantalum or tantalum nitride layer which is to be etched by plasma is provided on a glass substrate, that is for example on a manufacturing process of a thermal head, after a tantalum nitride layer 2, a nichrom layer 3 and a gold electrode layer 4 is formed sequentially on a glazed ceramic substrate 1, and by next etching performed on the gold electrode 4 and the nichrom layer 3, a pattern C is formed. Subsequently using plasma gas consisting of CF4 of 0-40% and O2 of 60-90% by volume %, plasma etching on the tantalum nitride layer 2 is performed, and a configuration shown in D is attained. By this method, the gold electrode layer 4 and an exposed surface of the glazed ceramic substrate 1 are not subjected to damages.
JP18051980A 1980-12-22 1980-12-22 Plasma etching method Pending JPS57104221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18051980A JPS57104221A (en) 1980-12-22 1980-12-22 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18051980A JPS57104221A (en) 1980-12-22 1980-12-22 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS57104221A true JPS57104221A (en) 1982-06-29

Family

ID=16084676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18051980A Pending JPS57104221A (en) 1980-12-22 1980-12-22 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS57104221A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210890A (en) * 2004-12-27 2006-08-10 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7545043B2 (en) 2004-10-15 2009-06-09 Samsung Sdi Co., Ltd. Device comprising multi-layered thin film having excellent adhesive strength and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7545043B2 (en) 2004-10-15 2009-06-09 Samsung Sdi Co., Ltd. Device comprising multi-layered thin film having excellent adhesive strength and method for fabricating the same
US7799677B2 (en) 2004-10-15 2010-09-21 Samsung Sdi Co., Ltd. Device comprising multi-layered thin film having excellent adhesive strength and method for fabricating the same
JP2006210890A (en) * 2004-12-27 2006-08-10 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device

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