JPS5651580A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5651580A
JPS5651580A JP12531879A JP12531879A JPS5651580A JP S5651580 A JPS5651580 A JP S5651580A JP 12531879 A JP12531879 A JP 12531879A JP 12531879 A JP12531879 A JP 12531879A JP S5651580 A JPS5651580 A JP S5651580A
Authority
JP
Japan
Prior art keywords
contg
gas
subjecting
plasma etching
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12531879A
Other languages
Japanese (ja)
Other versions
JPS628512B2 (en
Inventor
Yukio Tanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12531879A priority Critical patent/JPS5651580A/en
Publication of JPS5651580A publication Critical patent/JPS5651580A/en
Publication of JPS628512B2 publication Critical patent/JPS628512B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To decrease the contact resistance of semiconductor substrate surface etc. by subjecting the same to plasma etching under reduced pressure by using a reactive gas contg. C and F, etc. then subjecting the same to high-temperature heat treatment in an inert-gas-contg. atmosphere.
CONSTITUTION: A silicon oxide film, a silicon nitride film for selective oxidation and a resist film are formed on a silicon substrate, and the silicon nitride film and silicon oxide film are etched by using CF4 or CCl2 etc. and H2 gas. This etched surface is subjected to high-temperature heat treatment of, for example, about 1,050°C in an atmosphere contg. an inert gas such as N2, whereby organic and heavy metal stains contg. C, F, etc. are removed. The induction of huge crystal defects called "stacking fault" in the semiconductor production process is decreased by this process.
COPYRIGHT: (C)1981,JPO&Japio
JP12531879A 1979-10-01 1979-10-01 Plasma etching method Granted JPS5651580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12531879A JPS5651580A (en) 1979-10-01 1979-10-01 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12531879A JPS5651580A (en) 1979-10-01 1979-10-01 Plasma etching method

Publications (2)

Publication Number Publication Date
JPS5651580A true JPS5651580A (en) 1981-05-09
JPS628512B2 JPS628512B2 (en) 1987-02-23

Family

ID=14907132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12531879A Granted JPS5651580A (en) 1979-10-01 1979-10-01 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5651580A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110119A (en) * 1982-12-15 1984-06-26 Nec Corp Surface processing for semiconductor layer
JPS59201426A (en) * 1983-04-29 1984-11-15 Sony Corp Processing of semiconductor substrate
JPS61147530A (en) * 1984-12-21 1986-07-05 Toshiba Corp Reactive ion etching method
JPS6466544A (en) * 1987-09-08 1989-03-13 Fuji Photo Film Co Ltd Chemical analyzer
JPH01206620A (en) * 1988-02-15 1989-08-18 Toshiba Corp Manufacture of semiconductor device
WO2017110335A1 (en) * 2015-12-25 2017-06-29 東京エレクトロン株式会社 Substrate treatment method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243615A (en) * 1987-03-31 1988-10-11 Matsushita Electric Ind Co Ltd Liquid fuel burning equipment

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110119A (en) * 1982-12-15 1984-06-26 Nec Corp Surface processing for semiconductor layer
JPS59201426A (en) * 1983-04-29 1984-11-15 Sony Corp Processing of semiconductor substrate
JPS61147530A (en) * 1984-12-21 1986-07-05 Toshiba Corp Reactive ion etching method
JPS6466544A (en) * 1987-09-08 1989-03-13 Fuji Photo Film Co Ltd Chemical analyzer
JPH01206620A (en) * 1988-02-15 1989-08-18 Toshiba Corp Manufacture of semiconductor device
WO2017110335A1 (en) * 2015-12-25 2017-06-29 東京エレクトロン株式会社 Substrate treatment method
KR20180084094A (en) * 2015-12-25 2018-07-24 도쿄엘렉트론가부시키가이샤 Substrate processing method
CN108475632A (en) * 2015-12-25 2018-08-31 东京毅力科创株式会社 Substrate processing method using same
TWI695428B (en) * 2015-12-25 2020-06-01 日商東京威力科創股份有限公司 Substrate processing method
US10910229B2 (en) 2015-12-25 2021-02-02 Tokyo Electron Limited Substrate treatment method
CN108475632B (en) * 2015-12-25 2023-04-04 东京毅力科创株式会社 Substrate processing method

Also Published As

Publication number Publication date
JPS628512B2 (en) 1987-02-23

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