JPS5779625A - Gettering of silicon wafer - Google Patents
Gettering of silicon waferInfo
- Publication number
- JPS5779625A JPS5779625A JP15629180A JP15629180A JPS5779625A JP S5779625 A JPS5779625 A JP S5779625A JP 15629180 A JP15629180 A JP 15629180A JP 15629180 A JP15629180 A JP 15629180A JP S5779625 A JPS5779625 A JP S5779625A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- plasma
- stacking faults
- treatment
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000005247 gettering Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 238000001020 plasma etching Methods 0.000 abstract 2
- 238000009832 plasma treatment Methods 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To collect stacking faults into etching damage and to reduce stacking faults of a silicon wafer by a method wherein plasma etching with CF4 is performed to the back of the silicon wafer. CONSTITUTION:Plasma etching with Freon gas is performed to the back of the silicon wafer to form etching damage within thickness of several hundred Angstrom , the factors of stacking faults are collected in the etching damage, and then the plasma cleaning treatment with oxygen gas for removal of contamination generated during the plasma treatment is performed. Accordingly the stacking faults in an oxide film generated by thermal oxidation are removed, characteristic of the wafer element is stabilized, and the treatment of the back of wafer with the plasma treatment is simplified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15629180A JPS5779625A (en) | 1980-11-05 | 1980-11-05 | Gettering of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15629180A JPS5779625A (en) | 1980-11-05 | 1980-11-05 | Gettering of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779625A true JPS5779625A (en) | 1982-05-18 |
Family
ID=15624593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15629180A Pending JPS5779625A (en) | 1980-11-05 | 1980-11-05 | Gettering of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779625A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103348A (en) * | 1982-12-06 | 1984-06-14 | Toyota Central Res & Dev Lab Inc | Manufacture of semiconductor device |
| JPS6047426A (en) * | 1983-08-26 | 1985-03-14 | Komatsu Denshi Kinzoku Kk | Bsd-imparted semiconductor substrate |
| KR100405015B1 (en) * | 1999-09-10 | 2003-11-07 | 가부시끼가이샤 도시바 | A method of manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051665A (en) * | 1973-09-07 | 1975-05-08 | ||
| JPS5362474A (en) * | 1976-11-17 | 1978-06-03 | Hitachi Ltd | Cleaning method of metal photo mask |
-
1980
- 1980-11-05 JP JP15629180A patent/JPS5779625A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051665A (en) * | 1973-09-07 | 1975-05-08 | ||
| JPS5362474A (en) * | 1976-11-17 | 1978-06-03 | Hitachi Ltd | Cleaning method of metal photo mask |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103348A (en) * | 1982-12-06 | 1984-06-14 | Toyota Central Res & Dev Lab Inc | Manufacture of semiconductor device |
| JPS6047426A (en) * | 1983-08-26 | 1985-03-14 | Komatsu Denshi Kinzoku Kk | Bsd-imparted semiconductor substrate |
| JPS6355212B2 (en) * | 1983-08-26 | 1988-11-01 | Komatsu Denshi Kinzoku Kk | |
| KR100405015B1 (en) * | 1999-09-10 | 2003-11-07 | 가부시끼가이샤 도시바 | A method of manufacturing semiconductor device |
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