JPS57194547A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57194547A JPS57194547A JP7939081A JP7939081A JPS57194547A JP S57194547 A JPS57194547 A JP S57194547A JP 7939081 A JP7939081 A JP 7939081A JP 7939081 A JP7939081 A JP 7939081A JP S57194547 A JPS57194547 A JP S57194547A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- layer
- film
- si3n4
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
Abstract
PURPOSE:To obtain the oxide film isolated structure without having an isolation leak for the titled device by a method wherein an oxide film is formed in the groove, on which an etching was performed using an Si3N4 film as a mask, and a heat treatment is performed in a nitrogenous atmosphere in the state wherein the oxide film is left over by ion implantation performed through the oxide film. CONSTITUTION:An Si3N4 layer 15 is provided on the epitaxial layer 13 of a single crystal Si substrate 11 through the intermediary of a thin SiO2 layer 14, and a groove 16 is formed by performing an etching using the layer 15 as a mask. Then, a thin oxide film 17 is formed in the exposed groove 16, an ion is implanted in the groove through the film 17 using the Si3N4 film 15 as a mask, and after an inversion preventing layer 18 has been formed by performing a heat treatment in a nitrogenous atmosphere in the state wherein an oxide film 17 is left over, an insulation isolated layer 19 is formed by performing an oxidation, and an oxide film isolated structure is obtained by removing the Si3N4-film 15. Accordingly, as the contact of the silicon surface and the high- temperature nitrogenous gas is cut off by the oxide film, the generation of crystal defect and the segregation of injected impurities can be prevented, thereby enabling to obtain an excellent oxide film isolated structure without having an isolation leak.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7939081A JPS57194547A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7939081A JPS57194547A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57194547A true JPS57194547A (en) | 1982-11-30 |
Family
ID=13688529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7939081A Pending JPS57194547A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57194547A (en) |
-
1981
- 1981-05-27 JP JP7939081A patent/JPS57194547A/en active Pending
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